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    3N35 Search Results

    3N35 Datasheets (11)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    3N35
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 65.89KB 1
    3N35
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 111.55KB 1
    3N35
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 43.47KB 1
    3N35
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 158.27KB 1
    3N35
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 29.97KB 1
    3N35
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 29.97KB 1
    3N35
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 29.97KB 1
    3N3597
    Diode Transistor Silicon Transistors Scan PDF 51.78KB 1
    3N35A
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 65.89KB 1
    3N35A
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 383.71KB 4
    3N35A
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 43.47KB 1
    SF Impression Pixel

    3N35 Price and Stock

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    KEMET Corporation R523N356050P0M

    Safety Capacitor, Metallized PP, Radial Box - 2 Pin, 0.56 uF, ? 20%, X2, Through Hole, 310 VAC - Bulk (Alt: R523N356050P0M)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas R523N356050P0M Bulk 246,500 40 Weeks 1
    • 1 $0.27
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    Newark R523N356050P0M Bulk 2,372 1
    • 1 $1.22
    • 10 $0.66
    • 100 $0.59
    • 1000 $0.48
    • 10000 $0.47
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    TME R523N356050P0M 500
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    • 10000 $0.38
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    Rutronik R523N356050P0M Bulk 1,500 500
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    • 1000 $0.33
    • 10000 $0.32
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    SiTime Corporation SIT1408BI-13-33N-3.570000E

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 50ppm, 3.3V, 3.57MHz, NC, Default - Tape and Reel (Alt: SIT1408BI-13-33N-3.570000E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT1408BI-13-33N-3.570000E Tape & Reel 6 Weeks 1,000
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    • 1000 $2.22
    • 10000 $2.08
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    Glenair Inc MS27470Y13N35X

    HERMETICS - 38999 CONNECTORS - Bulk (Alt: MS27470Y13N35X)
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    Avnet Americas MS27470Y13N35X Bulk 5 Weeks 1
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    Newark MS27470Y13N35X Bulk 1
    • 1 $2497.68
    • 10 $1391.48
    • 100 $989.75
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    Interstate Connecting Components MS27470Y13N35X
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    Powell Electronics MS27470Y13N35X 3 1
    • 1 $3116.06
    • 10 $1735.98
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    ITT Interconnect Solutions KJL3G23N35SB

    - Bulk (Alt: KJL3G23N35SB)
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    Avnet Americas KJL3G23N35SB Bulk 25 Weeks 25
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    Interstate Connecting Components KJL3G23N35SB
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    Master Electronics KJL3G23N35SB
    • 1 -
    • 10 $1937.69
    • 100 $729.70
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    ITT Interconnect Solutions KJL6T13N35SA

    - Bulk (Alt: KJL6T13N35SA)
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    Avnet Americas KJL6T13N35SA Bulk 38 Weeks 25
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    Newark KJL6T13N35SA Bulk 25
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    Interstate Connecting Components KJL6T13N35SA
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    Master Electronics KJL6T13N35SA
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    • 100 $348.66
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    3N35 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3N35

    Abstract: tetrode transistor TO 12 dimensions 19S8 ScansUX7
    Contextual Info: T Y P E 3N35 N -P-N G R O W N -JU N C T IO N S ILIC O N T E T R O D E T R A N S IS TO R B U L L E T IN N O . D L -S 5 8 9 6 1 , A U G U S T 1 9 5 8 Typical 2 0 d b P o w e r G a in a t 7 0 M C Mgh M i ct M gh T ia p u l w i D e s ig n e d fo r W g h F r i f m c r


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    vc-20v-100maib2--100ma7s222+53n35tetrode transistorto 12 dimensions19s8scansux7 PDF

    3N35

    Contextual Info: TYPE 3N35 N-P-N GROWN JUNCTION SILICON TETRODE TRANSISTOR B U LL ET IN NO. DL-S 58961, A UG U ST 1958 Typical 20db Power Gain at 70 MC Hgh Cain at High Temperature Designed for High Frequency • IF Amplifiers RF Amplifiers * Video Amplifier! • Ofcillators


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    3n35 PDF

    3N35

    Abstract: tetrode transistor RAW MATERIAL INSPECTION procedure 3N35 JAN
    Contextual Info: MIL-S-19500/80E J 7 A p ril 1972 _ SÜ PK K SE D IN U s - 1 QRnn/flnn m ît 1 July 1965 See 6.3 H m T ^T A D V iriiU J k m u x O D P ^ T X 'T r ' A OTTAKT u r u v ju ' i v a i i v n SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPE 3N35 This specification is m andatory for use by all D epartiiiy n w tj


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    mil-s-19500/80emil-s-19500/sodmil-s-195003n35+3tetrode transistorraw material inspection procedure3n35 jan PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


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    til78photo transistor til78til78 phototransistorfpt100 phototransistor+4ft06mrd100os13phototransistor ocp71 PDF

    2SC640

    Abstract: 3N27 BC130C
    Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    2sc6403n27bc130c PDF

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    til78til78 phototransistorl44abfx82+5k1504mt101bp1028phototransistor ocp71transistor k1502 PDF

    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    npn110fab-100mcbvcb0-30vpc-125mw+13lc-10mafab-150mcfab-200mctil78sa2739phototransistor ocp71cm601jan2n491photo transistor til78til78 phototransistorcm602fpn100ft06 PDF

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    npn110fab-100mcbvcb0-30vpc-125mw+13lc-10mafab-150mcfab-200mctil78photo transistor til78k1202phototransistor ocp71photo til78til78 phototransistor2n3182sk19gr2sk19yc682a PDF

    2SC114 transistor

    Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
    Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    pt6905apt6905bpt6905c100msa+14100m5amm2261mm2262mm22632sc114 transistorfzj 131usaf516es047mpmt2222sc2862sc2872sc430400mtransistor 2sc114 replacementtransistor 2sc114 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149 PDF

    2N80

    Abstract: 5P30
    Contextual Info: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _


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    dip-14dip-g142n1003ki33+43n1005n1002n805p30 PDF

    TO63

    Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
    Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629


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    f\15i5tdr2n3773n5629n5630+92n56312n62592n63592n3237n35972n3598to632n35992n3772 PDF

    TIL78

    Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
    Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    fab-100mcbvcb0-30vpc-125mwlc-10ma+13fab-150mcfab-200mcbvcbo-15vtil78photo transistor til 78photo transistor til78sk 110 19 20n2sc640 transistor2sc2862sc2872sc430400mpmt222 PDF

    TIL78

    Abstract: MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055
    Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    fab-100mcbvcb0-30vpc-125mwlc-10ma+13fab-150mcfab-200mcbvcbo-15vtil78mrd100fsp165bsw11rt9302n577bc198abfy4710g1051d10b1055 PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    2g1012g1022g1032g109+152g2202g2212g2222g2232g2242n1892n1136b2n420b1151 equivalent2sa114oc592t3122t203sft1252n1152 PDF

    BC125

    Abstract: 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 V BR CEO 10 15 TP5451 40080 MPS3566 MPS3566 2S741 2S741 2S741A PET3704 PET3705 2N471 ~~1~~~ 20 25 - 30 35 D4C28 4C28 2N546 2N1252A 2N1252A 2N907 2N761 BC120 ~g~~g SE8oo1


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    2sc3246k2sd16272sc3053bfy72+152n24142n4968tp5451mps35662s741bc1252n907g700mbc232b2n1410kt384alow-power silicon npn2n474bfy333n35 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748 PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76 PDF

    2N3501 JANTX

    Abstract: JANKCB2N3501 2N3501 diagram 2n3501ub 366n JANKCC2N3501 2N3498 2N3501 2N3499 2N3499L
    Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 5 November 2010. MIL-PRF-19500/366N 5 August 2010 SUPERSEDING MIL-PRF-19500/366M 22 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER,


    Original
    mil-prf-19500/366nmil-prf-19500/366m2n34982n3498l+132n3498u42n34992n3499l2n3499u42n35002n3500l2n3501 jantxjankcb2n35012n3501 diagram2n3501ub366njankcc2n35012n3501 PDF

    irf3203

    Abstract: MTM12N20 MTM15N35 DJ05AH mtm5n35 MTM10N25 MTM15 MTM3N35 MTM4N35 MTM5N20
    Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ 'D 'D(Cont) (Amp) Max PO @ Tc = 25°C (Wans) Max V BR(DSS) (Volts) Min (Ohms) Max (Amp) 450 1.5 2 M TM 4N 45 4 75 1.10 4 IRF443


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    o-204aamtm4n45irf443irf441+16mtm7n45irf453irf451mtm15n45mtm3n40irf322irf3203mtm12n20mtm15n35dj05ahmtm5n35mtm10n25mtm15mtm3n35mtm4n35mtm5n20 PDF

    MTM8P20

    Abstract: IRF3203 MTM12N20 DJ05AH MTM15N35 MTM3N35 MTM4N35 mtm5n35 MTM15N40 MTP2P45
    Contextual Info: POWER TRANSISTORS — TM OS M ETAL continued Metal TMOS Power M OSFETs — TO-204AA (continued) C A S E 1-04 an d C A S E 1-05 rDS(on) @ 'D 'D(Cont) (Amp) Max PO @ T c = 25°C (Wans) Max V BR(DSS) (Volts) Min (Ohms) Max (Amp) 450 1.5 2 M TM 4N45 4 75 1.10


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    o-204aamtm4n45irf443irf441+16mtm7n45irf453irf451mtm15n45mtm3n40irf322mtm8p20irf3203mtm12n20dj05ahmtm15n35mtm3n35mtm4n35mtm5n35mtm15n40mtp2p45 PDF

    2N25

    Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
    Contextual Info: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%


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    dip-14dip-g14300atthe100pcen+15g1n251n1002n1003n1005n1002n255n505n30smd 1n60esc 5p205n353n255p305n803n45 PDF