2SC430 Search Results

2SC4301

Contextual Info: Inchange Semiconductor Product Specification 2SC4301 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・Switching Regulator, ・Lighting Inverter and general purpose PINNING PIN DESCRIPTION

2SC4309

Contextual Info: Power Transistors 2SC4309 2SC4309 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features Unit ! mm 5.3max. 20.5max. • High speed sw itching 3.0- ' • High collector-base voltage V cbo • Wide area of safety operation (ASO)

2SC4300

Abstract: transistor ,12v ,Ic 1A ,NPN 250V transistor npn 2a
Contextual Info: SavantIC Semiconductor Product Specification 2SC4300 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

Hitachi DSA002755

Abstract: 2SC4308
Contextual Info: 2SC4308 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current

2SC4309

Contextual Info: Power Transistors b^3SflS4 G O l C m b 457 « P N C E PANASONIC INDL/ELE K S EMI 2SC4309 2SC 4309 bTE D Silicon NPN Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching U n it I mm • Features 20.5m ax. 5 W 3.0 • High sp ee d sw itch in g

Contextual Info: Power T ransistors 2SC 4309 2SC4309 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it I mm • Features 5.3m ax. 20.5m ax. 3.0- • High speed sw itching • High collector-base voltage 14 V cbo

Contextual Info: SANKEN ELECTRIC CO LT» SSE » • 7^07141 □□OO'JÌS 'ìbH « S A K J Silicon NPN Triple Diffused Planar 2SC4302 ☆ High Voltage High Speed Switching T ransistor Application Example : Sw itching Regulator and General Purpose • Outline Drawing 5 . .FM 100

2SC430B

Abstract: 2SC4308 hitachi ha 2SC43
Contextual Info: HITACHI 2SC4308-SILICON MPN EPITAXIAL PLANAR VHF WIDE BAND AMPLIFIER 1U _i ì f f l » - - . f n m . _. l — : '1 I. i. Fmvti , L = m J } C c !k < w in rniri JEDEC 10-92} I ABSOLUTE MAXIMUM RATINGS (Ta -250C Item MAXIMUM COLLECTOR DISSIPATION

2SC4301

Contextual Info: SavantIC Semiconductor Product Specification 2SC4301 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·Switching Regulator, ·Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1

Hitachi DSA00389

Abstract: 2SC4308
Contextual Info: 2SC4308 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Outline TO-92 2 1. Base 2. Emitter 3. Collector 3 2 1 2SC4308 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage

2SC4304

Abstract: FM20 DSA0016509
Contextual Info: 2SC4304 Silicon NPN Triple Diffused Planar Transistor High Voltage High Speed Switchihg Transistor hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A

2SC4300

Contextual Info: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A

2SC4308

Abstract: 2SC4308TZ-E 2SC4308TZ PRSS0003DA-C SC-43A
Contextual Info: 2SC4308 Silicon NPN Epitaxial Planar REJ03G0723-0200 Previous ADE-208-1103 Rev.2.00 Aug.10.2005 Application VHF Wide band amplifier Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings

2sc4304

Abstract: 357B
Contextual Info: SavantIC Semiconductor Product Specification 2SC4304 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

transistor applications

Abstract: transistor TO-3PML Outline Dimensions 2SC4303
Contextual Info: SavantIC Semiconductor Product Specification 2SC4303 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·Switching Regulator, ·Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1

2SC4303

Contextual Info: Inchange Semiconductor Product Specification 2SC4303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・Switching Regulator, ・Lighting Inverter and general purpose PINNING PIN DESCRIPTION

2SC4306

Contextual Info: Transistors SMD Type High-Current Switching Applications 2SC4306 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2sc4304

Abstract: 2SC4304,C4304
Contextual Info: Inchange Semiconductor Product Specification 2SC4304 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION

2SC4301

Contextual Info: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)

2044B

Abstract: 2SC4306 ITR06635 ITR06636
Contextual Info: Ordering number:ENN2930A NPN Epitaxial Planar Silicon Transistor 2SC4306 High-Current Switching Applications Package Dimensions unit:mm 2045B [2SC4306] 2.3 1.5 6.5 5.0 4 5.5 • Adoption of FBET, MBIT processes. · Low saturation voltage. · High-speed switching.

2SC4300

Contextual Info: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A

2SC4301

Contextual Info: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)

2SC4304

Contextual Info: JMnic Product Specification 2SC4304 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector

2SC4301

Contextual Info: JMnic Product Specification 2SC4301 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・Switching Regulator, ・Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector