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    PULSE14 Search Results

    PULSE14 Datasheets Context Search

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    2SC4546

    Abstract: FM20 vbe 12v, vce 600v NPN Transistor
    Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A


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    2sc4546pulse1410typ55typ+5400min100maxo220ffm20vbe 12v, vce 600v npn transistor PDF

    Contextual Info: 2SC5002 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V 7(Pulse14) A IB 3.5 A PC 80(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg 0.8±0.2 5.5 ø3.3±0.2 a b 3.0 6 IC V V MHz pF 1.75 1.05 +0.2 -0.1 •Typical Switching Characteristics (Common Emitter)


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    2sc5002pulse14100max800min+2100typfm100 PDF

    2SC3835

    Abstract: DSA0016507
    Contextual Info: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max


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    2sc3835100max120minpulse14+430typ110typmt-100dsa0016507 PDF

    2SC4301

    Contextual Info: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)


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    2sc4301fm100100max800min+2pulse14105typ PDF

    25C1252

    Abstract: TE 8802
    Contextual Info: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 120 V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A


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    2sc3834pulse14100max120min+530typ110typmt-2525c1252te 8802 PDF

    2SC4301

    Contextual Info: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)


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    2sc4301fm100100max800min+2pulse14105typ PDF

    transistor npn high speed switching 5A 600v

    Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
    Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A


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    2sc4546pulse1410typ55typ+6400min100maxo220ftransistor npn high speed switching 5a 600vfm20vbe 12v, vce 600v npn transistor PDF

    2SC5002

    Contextual Info: 2SC5002 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V 7(Pulse14) A IB 3.5 A PC 80(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg 0.8±0.2 5.5 ø3.3±0.2 a b 3.0 6 IC V V MHz pF 1.75 1.05 +0.2 -0.1 •Typical Switching Characteristics (Common Emitter)


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    2sc5002pulse14 PDF

    Contextual Info: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 3.5 A VCE(sat) IC=3A, IB=0.6A


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    2sc3680pulse14100max800min+2105typmt-100 PDF

    2SC3680

    Contextual Info: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor V IEBO VEB=7V 100max µA V V V(BR)CEO IC=10mA 800min 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A


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    2sc3680100max800minpulse14+2105typmt-100 PDF

    2SC3834

    Abstract: transistor 1022
    Contextual Info: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A


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    2sc3834100max120minpulse14+430typ110typmt-25transistor 1022 PDF

    Contextual Info: 2SC5003 V 7 Pulse14 A IB 3.5 A PC 80(Tc=25°C) W 150 °C –55 to +150 °C Tj Tstg V V V MHz pF 0.8±0.2 ø3.3±0.2 a b 3.0 6 IC VEBO 1.75 1.05 +0.2 -0.1 •Typical Switching Characteristics (Common Emitter) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) tstg (µs)


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    pulse142sc5003100max100typ+1300ma PDF

    2sc3835

    Contextual Info: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA V V V(BR)CEO IC=50mA 120min 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A


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    2sc3835100max120minpulse14+330typ110typmt-100 PDF

    Y splitter rj45

    Abstract: CANopen RJ45 usb to rj45 extenders rj45 10pin molex 50394-8100 crimping RJ45 AMP stegmann MC58120 MC58220 Cable-RJ45-02-R
    Contextual Info: Prodigy /CME PCI User’s Guide Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.2, December 2009 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed to third parties, translated, copied,


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    y splitter rj45canopen rj45usb to rj45 extendersrj45 10pin molex+650394-8100crimping rj45 ampstegmannmc58120mc58220cable-rj45-02-r PDF

    2SC4153

    Abstract: 2SC4153 equivalent FM20 100X100X2
    Contextual Info: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C


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    2sc4153120min30typ110typ+7ulse14100maxo220f50x50x22sc4153 equivalentfm20100x100x2 PDF

    2SC3890

    Contextual Info: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat)


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    2sc3890pulse14o220f100max+3400min10typ50typ PDF

    2SC5003

    Contextual Info: 2SC5003 A IB 3.5 A PC 80 Tc=25°C W 150 °C –55 to +150 °C Tj Tstg V V V MHz pF 0.8±0.2 5.5 ø3.3±0.2 a b 1.75 1.05 +0.2 -0.1 •Typical Switching Characteristics (Common Emitter) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) tstg (µs) tf (µs) 200 50 4


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    2sc5003100ma PDF

    MB90254

    Abstract: 3 phase soft start induction motor principal motion DETECTOR CIRCUIT DIAGRAM cable-1006 GP 84 SSI encoder mb90242 MC2000 N102A MB902120
    Contextual Info: Navigator -PCI User’s Guide Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.1, October 2003 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed


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    per25mcp120t-475imb902543 phase soft start induction motor principal+8motion detector circuit diagramcable-1006gp 84ssi encodermb90242mc2000n102amb902120 PDF

    RJ45 splitter

    Abstract: Cable-RJ45-02-R 50394-8100 crimping RJ45 AMP Molex 51021-0200 Molex utp cat 5e renishaw interface stegmann MC58120 MC58220
    Contextual Info: Prodigy /CME PC/104 User’s Guide Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.2, December 2009 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed to third parties, translated, copied,


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    pc/104rj45 splittercable-rj45-02-r50394-8100+7crimping rj45 ampmolex 51021-0200molex utp cat 5erenishaw interfacestegmannmc58120mc58220 PDF

    PLX9030

    Abstract: s46 hall MC55320 s41 hall DK55 MC55420 plx 9030 data sheet MC55000 MC58000 DK55420
    Contextual Info: MagellanTM Motion Processor Developer’s Kit Manual Magellan Motion Processor Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.4, February 2007 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed to third parties, translated, copied,


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    plx9030s46 hallmc55320s41 hall+6dk55mc55420plx 9030 data sheetmc55000mc58000dk55420 PDF

    2SC4153

    Abstract: FM20
    Contextual Info: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C


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    2sc4153120min30typ110typ+4100x100x2150x150x250x50x2fm20 PDF

    2SC3890

    Abstract: FM20
    Contextual Info: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A


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    2sc3890100max400minpulse14+410typ50typo220ffm20 PDF

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


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    n6to44672sd211to2142sc44682sc1828+162sc38322sa768to7692sa12622sa770to7712sa17252sa957to958d2494c4381b1625 equivalent transistora1668 transistora1695 power transistord2495c3852ad1796 power transistorc5287d2493 PDF

    Cable-5003-01

    Abstract: 51110-1051 ED3000 FRJAE PR-002A TRM-RJ45-02-R Cable-RJ45-02-R hall sensor 4-pin floppy Kycon KLDX-0202-A CANopen RJ45 resistor
    Contextual Info: Prodigy /CME Stand-Alone Card User’s Guide Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.2, December 2009 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed to third parties, translated, copied,


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    dc-1000cable-5003-0151110-1051ed3000+7frjaepr-002atrm-rj45-02-rcable-rj45-02-rhall sensor 4-pin floppykycon kldx-0202-acanopen rj45 resistor PDF