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TDK Invensense


TDK Invensense ICS-40800MINI UltraLow Noise dualported Directional MEMS Microphone (Alt: ICS-40800MINI)
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800MIN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC4299 Contextual Info: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max	Original	2sc4299 fm100 100max 800min +150typ	PDF
2SC3679 Contextual Info: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max	Original	2sc3679 pulse10 100max 800min +375typ 700ma mt-100	PDF
2SC4020 Abstract: 2SC4020 equivalent Contextual Info: 2SC4020 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VEBO 7 V V(BR)CEO 3(Pulse 6) A hFE IC µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W VBE(sat)	Original	2sc4020 100max 800min mt-25 +240typ 2sc4020 equivalent	PDF
Ib22 Contextual Info: 2SC4020 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse 6) A hFE VCE=4V, IC=0.7A 10 to 30 VEBO IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W	Original	2sc4020 100max 800min 40typ +2mt-25 ib22	PDF
2SC4304 Abstract: FM20 DSA0016509 Contextual Info: 2SC4304 Silicon NPN Triple Diffused Planar Transistor High Voltage High Speed Switchihg Transistor hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A	Original	2sc4304 800min 15typ 50typ +5100ma 100max o220f fm20 dsa0016509	PDF
2SC4445 Abstract: transistor case To 106 Contextual Info: 2SC4445 Application : Switching Regulator and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V BR CEO V 3(Pulse6) A hFE IC=10mA 800min VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 60(Tc=25°C) W VBE(sat)	Original	2sc4445 fm100 100max 800min +315typ 50typ transistor case to 106	PDF
2SC4300 Contextual Info: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A	Original	2sc4300 100max 800min pulse10 +275typ fm100	PDF
2SC4299 Contextual Info: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max	Original	2sc4299 fm100 100max 800min +150typ	PDF
2SC4301 Contextual Info: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)	Original	2sc4301 fm100 100max 800min +2pulse14 105typ	PDF
2SC3679 Contextual Info: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A	Original	2sc3679 pulse10 100max 800min +275typ mt-100	PDF
Contextual Info: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions Ratings Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2	Original	2sc4908 100max 800min 40typ +1o220f	PDF
2SC4300 Contextual Info: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A	Original	2sc4300 100max 800min pulse10 +375typ 700ma fm100	PDF
2SC4301 Contextual Info: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)	Original	2sc4301 fm100 100max 800min +2pulse14 105typ	PDF
2SC4908 Abstract: FM20 Contextual Info: 2SC4908 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions 2SC4908 Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2	Original	2sc4908 100max 800min 40typ +2o220f fm20	PDF

2SC4304 Abstract: FM20 Contextual Info: 2SC4304 Silicon NPN Triple Diffused Planar Transistor High Voltage High Speed Switchihg Transistor hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A	Original	2sc4304 800min 15typ 50typ +4100ma 100max o220f fm20	PDF
2SC4445 Contextual Info: 2SC4445 Application : Switching Regulator and General Purpose Conditions 2SC4445 Unit V ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V BR CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max	Original	2sc4445 fm100 100max 800min +215typ 50typ	PDF
2SC3680 Contextual Info: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor V IEBO VEB=7V 100max µA V V V(BR)CEO IC=10mA 800min 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A	Original	2sc3680 100max 800min pulse14 +2105typ mt-100	PDF
Contextual Info: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)	Original	2sc3678 100max 800min 50typ +1mt-100	PDF
2SC3678 Contextual Info: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A	Original	2sc3678 100max 800min 50typ +3400ma 500ma mt-100	PDF
BEP-13-3110D Abstract: BEP-7-316D BEP-17-318D FEP-17-C FEP-13-C BEP-20-8110D FEP-13 BEP-10-318D EP10 EP20 Contextual Info: Ferrite Cores EP Series For Power Supply and Signal Transformer EP Cores E Type EP7 EP10 EP13 EP17 EP20 A øC CORE SHAPES AND DIMENSIONS/CHARACTERISTICS 2D Dimensions mm A 9.2±0.2 11.5±0.3 12.5±0.3 18±0.4 24±0.5 øC 3.3±0.1 3.3±0.15 4.35±0.15 5.68±0.18	Original	pc40ep7-z h5aep10-z h5c3ep10-z pc40ep10-z +16pc50ep10-z h5aep13-z h5c3ep13-z pc40ep13-z pc50ep13-z h5aep17-z bep-13-3110d bep-7-316d bep-17-318d fep-17-c fep-13-c bep-20-8110d fep-13 bep-10-318d ep10 ep20	PDF
STK 407 - 040 Abstract: stk 407 070 LP 8029 m4 stk 407 090 LM 7804 STK 407 040 LM 7801 LP 8029 l2 9SMnPb28k makrolon 8030 Contextual Info: Miniatur-Abstandhalter Miniatur-Abstandhalter LPR 8000-Mini ff LPR 8001-70-Mini ff Miniature PCB Spacer r Selbstverriegelung wiederlösbar durch Zurückdrücken der Nase. Self-locking and releasable. r Montage: / Mounting: Bohrungen von 3,2 mm; max. 1,6 mm Materialstärke.	Original	8000-mini 8001-70-mini 8004-mini 8005-mini +128201-mini d-85640 stk 407 - 040 stk 407 070 lp 8029 m4 stk 407 090 lm 7804 stk 407 040 lm 7801 lp 8029 l2 9smnpb28k makrolon 8030	PDF
gps 680 Contextual Info: TEM MODE RESONATOR SILVER PLATED m u R a ta DRR Series FEATURES • High Q ■ IR Reflowable ■ Surface Mountable APPLICATIONS ■ Radio telephone VCO ■ Measuring Instruments OSC ■ G.P.S. or Geostar OSC ■ HDTV tuner OSC PART NUMBERING SYSTEM [ ORR I	OCR Scan	2r330 1r180 10mhz 17/fo +733/fo 360min 1990mhz 400min 2700mhz 480min gps 680	PDF
2SC5124 Contextual Info: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A)	Original	2sc5124 pulse20 100ma	PDF
Contextual Info: SANKEN ELECTRIC CO LTD SSE J> • 7cnG741 QQQQTflR 37T * S A K J Silicon NPN Triple Diffused Planar ☆High Voltage Switching Transistor 2SC4299 Application Example : e Outline Drawing 5 . . F M I 0 0 Sw itch in g R eg u lator and G e n e ra l P u rp o se	OCR Scan	ng741 2sc4299 800min 45x01 +1t0220	PDF

800MIN Search Results

800MIN Price and Stock

TDK Invensense ICS-40800MINI

800MIN Datasheets Context Search

2SC4299

2SC3679

2SC4020

Ib22

2SC4304

2SC4445

2SC4300

2SC4299

2SC4301

2SC3679

2SC4300

2SC4301

2SC4908

2SC4304

2SC4445

2SC3680

2SC3678

BEP-13-3110D

STK 407 - 040

gps 680

2SC5124