2SC43 Search Results

Contextual Info: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

2SC4301

Contextual Info: Inchange Semiconductor Product Specification 2SC4301 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・Switching Regulator, ・Lighting Inverter and general purpose PINNING PIN DESCRIPTION

2SC4387

Abstract: 2SA1672
Contextual Info: JMnic Product Specification 2SA1672 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC4387 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol

2SC4369

Abstract: 2SA1658
Contextual Info: JMnic Product Specification 2SC4369 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1658 ・Good linearity of hFE APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SA1643

Abstract: 2SC4327 TO-220f Package
Contextual Info: JMnic Product Specification 2SA1643 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4327 ・Low collector saturation voltage APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 VHF-UHF BAND LOW NOISE A M PLI FIE R APPLICATIONS. U n i t i n mm +0.5 2 .5 -0 .3 . L o w N o i s e F i g u r e , H i g h Gai n . . N F = 1 . ldB, I S 2 1 e |2= 1 3 d B f=lGHz MAX IMU M RATINGS (Ta=25°C) CHARACTERISTIC

NJ 25 50 N

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC4322 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm +0.5 2.5-0.3 . Low Noise Figure, High Gain. . NF=1.8dB, I S21e |2=7.5dB f=2GHz M A X I M U M RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

2SA1668

Abstract: 2SA1667 22SA1668
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1667 2SA1668 S ilicon PNP Power Transistors D E S C R IP T IO N • With T 0 2 2 0 F package • Complement to type 2SC4381/4382 A P P L IC A T IO N S • For TV vertical output .audio output driver and general purpose applications

2SA1673

Abstract: 2SC4388
Contextual Info: AOK Product Specification AOK Semiconductor 2SA1673 Silico n PNP P ow er T ran sisto rs DESCRIPTION • With TO-3PML package • Complement to type 2SC4388 APPLICATIONS • Audio and general purpose PINNING PIN D ESC RIPTIO N 1 Emitter 2 Collector 3 Base 4 1 1

2SC4336

Contextual Info: Inchange Semiconductor Product Specification 2SC4336 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc

2SC4350

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

3A 100V npn LOW SATURATION VOLTAGE

Abstract: 2SC4330 NPN Transistor 8A WW-150
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4330 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 0.5V(Max)@ IC= 8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V (Min) ·High Switching Speed APPLICATIONS

2SC4309

Contextual Info: Power Transistors 2SC4309 2SC4309 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features Unit ! mm 5.3max. 20.5max. • High speed sw itching 3.0- ' • High collector-base voltage V cbo • Wide area of safety operation (ASO)

2SC4361

Abstract: 2SA1654
Contextual Info: O rdering number ; EN 2 8 0 7 2SA1654/2SC4361 « P N P / N P N E p i t a x i a l P l a n a r Silicon T r a n s i s t o r s SA W O o. Sw itching A pplications w ith Bias/Resistance i A pplications * Switching circuit, inverter circuit, interface circuit, driver circuit

2SA1674

Abstract: 2SC4391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es

2SA1658

Abstract: 2SC4369
Contextual Info: SavantIC Semiconductor Product Specification 2SA1658 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4369 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector

2SC4300

Abstract: transistor ,12v ,Ic 1A ,NPN 250V transistor npn 2a
Contextual Info: SavantIC Semiconductor Product Specification 2SC4300 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2SC4382

Abstract: 2sc4381
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4381 2SC4382 DESCRIPTION •With TO-220F package ·Complement to type 2SA1667/1668 APPLICATIONS ·For TV vertical output ,audio output driver and general purpose applications PINNING

VEBO-15V

Abstract: 2SC4366 DSA003637
Contextual Info: 2SC4366 Silicon NPN Epitaxial ADE-208-1104A Z 2nd. Edition Mar. 2001 Application Low Frequency amplifier Outline MPAK 3 1 2 Note: Marking is “ZI–”. 1. Emitter 2. Base 3. Collector 2SC4366 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

EN3020

Abstract: 2SC4399 2sc4399-applied
Contextual Info: Ordering number:EN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2059B [2SC4399] 0.425 • High power gain : PG=25dB typ f=100MHz . · Very small-sized package permitting the 2SC4399applied sets to be made small and slim.

2SA1668

Abstract: 2SC4382 transistor 2SA1668 2sa1668 transistor pnp 200v 2sa166
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1668 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4382 APPLICATIONS

2SA1659

Abstract: 2SC4370
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION •High Collector-Emitter Breakdown Voltage VCEO= -160V Min ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting.

Contextual Info: TOSHIBA 2SC4321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 1 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lG H z ± 0.1 1 . 2 5 Í 0.1 M A X IM U M RATINGS (Ta = 25°C)