2SA166 Search Results

2SA1668

Abstract: 2SA1667 22SA1668
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1667 2SA1668 S ilicon PNP Power Transistors D E S C R IP T IO N • With T 0 2 2 0 F package • Complement to type 2SC4381/4382 A P P L IC A T IO N S • For TV vertical output .audio output driver and general purpose applications

2SC4382

Abstract: 2sc4381
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4381 2SC4382 DESCRIPTION •With TO-220F package ·Complement to type 2SA1667/1668 APPLICATIONS ·For TV vertical output ,audio output driver and general purpose applications PINNING

2SA1668

Abstract: 2SC4382 transistor 2SA1668 2sa1668 transistor pnp 200v 2sa166
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1668 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4382 APPLICATIONS

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1661 TRANSISTOR PNP 1. BASE FEATURES z Small Flat Package z High Current Application z High Voltage z High Transition Frequency 2. COLLECTOR 3. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1662 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

2SA1668

Abstract: 2SA1667 equivalent for 2sa1668 FM20
Contextual Info: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min

2SA1662

Abstract: ktc4374
Contextual Info: 2SA1662 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 4.6 4.4 1.8 1.4 1.6 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features — B 0.8 MIN Complementary to KTC4374 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

Ic14nf

Abstract: 2SA1669 ITR04064 ITR04065 ITR04066 ITR04067 ITR04068
Contextual Info: Ordering number:ENN2972 PNP Epitaxial Planar Silicon Transistors 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions • High cutoff frequnecy : fT=3.0GHz typ. · High power gain : MAG=11dB typ f=0.9GHz · Small noise figure : NF=2.0dB typ (f=0.9GHz)

2SA1667

Abstract: 2SA1668 FM20 22SA1
Contextual Info: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 Symbol 2SA1667 2SA1668 Unit •Electrical Characteristics (Ta=25°C) Conditions Symbol 2SA1667 2SA1668 Unit –10max –10max µA –150 –200 External Dimensions FM20 (TO220F)

FHC30LG

Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911

Contextual Info: ST 2SA1664U PNP Epitaxial Planar Transistor High Current Application The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 35

2SA1664

Contextual Info: ST 2SA1664 PNP Epitaxial Planar Transistor High Current Application The transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings Ta=25oC

2SA1664

Contextual Info: Transistors SMD Type PNP Transistor 2SA1664 Features Collector current IC=-0.8A Power dissipation PC=0.5W Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage

B948A

Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M

2SC4382

Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
Contextual Info: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A

Contextual Info: 2SA1664 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)0.8 Absolute Max. Power Diss. (W)1.0# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)500m

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

2sa1661

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1661 TRANSISTOR PNP 1. BASE FEATURES z Small Flat Package z High Current Application z High Voltage z High Transition Frequency 2. COLLECTOR 3. EMITTER

Contextual Info: Product specification 2SA1664 Features Collector current IC=-0.8A Power dissipation PC=0.5W Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V

2SA1668

Abstract: 2sc4381 2SA1667
Contextual Info: JMnic Product Specification 2SA1667 2SA1668 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4381/4382 APPLICATIONS ・For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION

2SA1664

Abstract: sot marking RY
Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1664 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current : -0.8 A ICM Collector-base voltage V V(BR)CBO : -35

SOT 89 RY

Abstract: 2SA1664 sot89 marking RY sot89 "TRANSISTOR"
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1664 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current : -0.8 A ICM Collector-base voltage

2SA1669

Abstract: 2sa166 EN2972 S11-W
Contextual Info: Ordering number:EN2972 PNP Epitaxial Planar Silicon Transistor 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions • High cutoff frequnecy : fT=3.0GHz typ. · High power gain : MAG=11dB typ f=0.9GHz · Small noise figure : NF=2.0dB typ (f=0.9GHz)