2SA1664 Search Results

Contextual Info: ST 2SA1664U PNP Epitaxial Planar Transistor High Current Application The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 35

2SA1664

Contextual Info: ST 2SA1664 PNP Epitaxial Planar Transistor High Current Application The transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings Ta=25oC

2SA1664

Contextual Info: Transistors SMD Type PNP Transistor 2SA1664 Features Collector current IC=-0.8A Power dissipation PC=0.5W Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage

Contextual Info: 2SA1664 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)0.8 Absolute Max. Power Diss. (W)1.0# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)500m

Contextual Info: Product specification 2SA1664 Features Collector current IC=-0.8A Power dissipation PC=0.5W Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V

2SA1664

Abstract: sot marking RY
Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1664 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current : -0.8 A ICM Collector-base voltage V V(BR)CBO : -35

SOT 89 RY

Abstract: 2SA1664 sot89 marking RY sot89 "TRANSISTOR"
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1664 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current : -0.8 A ICM Collector-base voltage

2SA1664

Abstract: sot marking RY
Contextual Info: 2SA1664 2SA1664 TRANSISTOR PNP SOT-89 FEATURES Power dissipation PCM : 0.5 1. BASE W (Tamb=25℃) 2. COLLECTOR 1 2 Collector current ICM : -0.8 A Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range 3. EMITTER 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1664 TRANSISTOR PNP 1. BASE FEATURES z Small Flat Package z High Current Application z High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: ST 2SA1664U PNP Epitaxial Planar Transistor High Current Application The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 35

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

2SC3875S

Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
Contextual Info: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

bq 8050

Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Contextual Info: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管

2SC4370A

Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
Contextual Info: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)