KTC4374 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1662 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

SOT89 MARKING 2E

Abstract: MARKING S0 sot89 KTA1662 KTC4374
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1662 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • 1W Mounted on Ceramic Substrate . • Small Flat Package. • Complementary to KTC4374. MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT -80 V V CBO

KTA1662

Abstract: KTC4374
Contextual Info: SEMICONDUCTOR KTA1662 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A ・1W Mounted on Ceramic Substrate . C H ・Small Flat Package. G J B E ・Complementary to KTC4374. D K MAXIMUM RATING (Ta=25℃) CHARACTERISTIC

2SA1662

Abstract: ktc4374
Contextual Info: 2SA1662 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 4.6 4.4 1.8 1.4 1.6 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features — B 0.8 MIN Complementary to KTC4374 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4374 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=400mA 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1

KTA1662

Abstract: KTC4374
Contextual Info: SEMICONDUCTOR KTC4374 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A C 1W Mounted on Ceramic Substrate . H Small Flat Package. G J B E Complementary to KTA1662. DIM A B C D E F G H J K D D K MAXIMUM RATING (Ta=25 )

Contextual Info: Transistors SMD Type PNP General Purpose Transistors KTA1662 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Small Flat Package. 3 0.53±0.1 0.80±0.1 0.48±0.1 2 0.44±0.1 2.60±0.1 1 0.40±0.1 ● Complementary to KTC4374.

KTA1662

Abstract: KTC4374 transistor hh 06
Contextual Info: SEMICONDUCTOR KTC4374 T E C H N IC A L D A T A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • 1W Mounted on Ceramic Substrate . • Small Flat Package. • Complementary to KTA1662. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTA1662 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Small Flat Package. 3 0.53±0.1 0.80±0.1 0.48±0.1 2 0.44±0.1 2.60±0.1 1 0.40±0.1 ● Complementary to KTC4374.

Contextual Info: SEMICONDUCTOR KTC4374 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A 1W Mounted on Ceramic Substrate . C H Small Flat Package. G J B E Complementary to KTA1662. DIM A B C D E F G H J K D D K MAXIMUM RATING (Ta=25 )

2SA1662

Abstract: KTC4374 2sa166 MARKING FY pnp MARKING FY pnp 2sa1662
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1662 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4374 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 400 mA ICM: Collector-base voltage

Contextual Info: JJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4374 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTA1662

Abstract: KTC4374
Contextual Info: K E C SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTC4374 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • 1W Mounted on Ceramic Substrate . • Small Flat Package. • Complementary to KTA1662. MAXIMUM RATINGS (Ta=25°C)

KTC4374

Abstract: e y marking transistor
Contextual Info: SEMICONDUCTOR KTC4374 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark E KTC4374 * Grade O O,Y Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

KTA1662

Abstract: KTC4374
Contextual Info: SEMICONDUCTOR KTC4374 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A ᴌ1W Mounted on Ceramic Substrate . C H ᴌSmall Flat Package. G J B E ᴌComplementary to KTA1662. D K MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC

KTC4374

Abstract: EY sot-89 Transistor Marking EY npn transistor Marking EY
Contextual Info: KTC4374 KTC4374 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 400 mA Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor