5N35 Search Results

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

5218 a audio operational

Abstract: M5223L M5218 M5223 M5R4558P
Contextual Info: MITSUBISHI ICs AV COMMON M5223L/P/FP DUAL SINGLE POWER SUPPLY OPERATIONAL AMPLIFIERS DESCRIPTION The M5223 are semiconductor integrated circuits designed as dual operational amplifiers which permit single power supply operation. The devices come in a compact 8-pin SIP, DIP or FP and

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

5N35

Abstract: MTM5N40 mtp5n35 N and P MOSFET
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5N35 MTM5N40 5N35 MTP5N40 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Pow er FETs are designed fo r h ig h vo lta g e , high speed p o w e r s w itc h in g a pp licatio n s such as s w itc h in g regu la to rs,

irf3203

Abstract: MTM12N20 MTM15N35 DJ05AH mtm5n35 MTM10N25 MTM15 MTM3N35 MTM4N35 MTM5N20
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ 'D 'D(Cont) (Amp) Max PO @ Tc = 25°C (Wans) Max V BR(DSS) (Volts) Min (Ohms) Max (Amp) 450 1.5 2 M TM 4N 45 4 75 1.10 4 IRF443

MTM8P20

Abstract: IRF3203 MTM12N20 DJ05AH MTM15N35 MTM3N35 MTM4N35 mtm5n35 MTM15N40 MTP2P45
Contextual Info: POWER TRANSISTORS — TM OS M ETAL continued Metal TMOS Power M OSFETs — TO-204AA (continued) C A S E 1-04 an d C A S E 1-05 rDS(on) @ 'D 'D(Cont) (Amp) Max PO @ T c = 25°C (Wans) Max V BR(DSS) (Volts) Min (Ohms) Max (Amp) 450 1.5 2 M TM 4N45 4 75 1.10

2N25

Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
Contextual Info: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

c303 diode

Abstract: 5N35 SEFM4N45
Contextual Info: S G S-TH0NS0N D?E 73 C 17579 SEFM4N45/SEFP4N45 5N35/SEFP5N3S SEFM5N40/SEFP5N40 7 eI2 t1237 QOlâQflS 4 D | D ~ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

2N6912

Abstract: 1N45 2N6917 STM15N45 STM-320 2N6913 MTM15N40 MTM5N40 STM15N40/3 2N6760
Contextual Info: SEMIC OND UCTOR TECHNOLOGY OSE D I öl3t>4Sö 511 HIGH VOLTAGE M O S POWER FIELD EFFECT T R A N SIST O R S N-CHANNEL STI Type Industry Type Breakdown Voltage Continuous Current Draln-Source on Resistance TransConductance Gate Threshold Voltage to gts min @ID

Contextual Info: □IP & SM D DELAY LINES 10TAPS •14PIN S. IB PIN PACKAGES □IP SlSURFACE MOUNTING*GLEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* * Surface Mount G Lead Package M ]3 12 J1 10 9. 8. IM PEDANCE 1 1 0% • 1 2 3 4 5 6 7 Rite Time n$«c 1 0 * 5% 20 30 40

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Contextual Info: MITSUBISHI <LINEAR ICs> M5223L, P, FP/5N358P DUAL SINGLE POWER SUPPLY OPERATIONAL AMPLIFIERS DESCRIPTION T h e M 5 2 2 3 /M 5 N 3 5 8 P a re s e m ic o n d u c to r in te g ra te d c irc u its d e s ig n e d as du a l o p e ra tio n a l a m p lifie rs w h ic h p e rm it single