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    2N6912 Search Results

    2N6912 Datasheets (1)

    Semiconductor Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N6912
    		Semiconductor Technology High Voltage MOS Power Field Effect Transistors Scan PDF 155.17KB 1

    2N6912 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		vnl005ao-204aa/to-3vnm006avnm005a+122n17172n1890o-205ad/to-392n7058ytf8302n70572n769ytf8402n1565vnp006a2sa10912n7066 PDF

    2N6912

    Abstract: 1N45 2N6917 STM15N45 STM-320 2N6913 MTM15N40 MTM5N40 STM15N40/3 2N6760
    Contextual Info: SEMIC OND UCTOR TECHNOLOGY OSE D I öl3t>4Sö 511 HIGH VOLTAGE M O S POWER FIELD EFFECT T R A N SIST O R S N-CHANNEL STI Type Industry Type Breakdown Voltage Continuous Current Draln-Source on Resistance TransConductance Gate Threshold Voltage to gts min @ID


    OCR Scan     		2n67592n67602n67612n6762+102n67672n69121n452n6917stm15n45stm-3202n6913mtm15n40mtm5n40stm15n40/3 PDF