2N6917 Search Results

2N6917 Datasheets (1)

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Semiconductor Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N6917		Semiconductor Technology	High Voltage MOS Power Field Effect Transistors	Scan	PDF	155.17KB	1

2N6917 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N7058 Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066 Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20	Original	vnl005a o-204aa/to-3 vnm006a vnm005a +122n1717 2n1890 o-205ad/to-39 2n7058 ytf830 2n7057 2n769 ytf840 2n1565 vnp006a 2sa1091 2n7066	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11ta0a12 a025a a0290 u0u55 +16a0291 a0292 a0305 a0306 a0a56 a0a59 aeg diode si 61 l aeg diodes d6 sgs transistors bc23b siliconix u315 mz306 by126 bcv59 ac128 2n3680	PDF
2N6912 Abstract: 1N45 2N6917 STM15N45 STM-320 2N6913 MTM15N40 MTM5N40 STM15N40/3 2N6760 Contextual Info: SEMIC OND UCTOR TECHNOLOGY OSE D I öl3t>4Sö 511 HIGH VOLTAGE M O S POWER FIELD EFFECT T R A N SIST O R S N-CHANNEL STI Type Industry Type Breakdown Voltage Continuous Current Draln-Source on Resistance TransConductance Gate Threshold Voltage to gts min @ID	OCR Scan	2n6759 2n6760 2n6761 2n6762 +102n6767 2n6912 1n45 2n6917 stm15n45 stm-320 2n6913 mtm15n40 mtm5n40 stm15n40/3	PDF

Catalog Datasheet

Type

Document Tags

PDF

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

Original

vnl005a o-204aa/to-3 vnm006a vnm005a +12

PDF

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

OCR Scan

11ta0a12 a025a a0290 u0u55 +16

PDF

2N6912

Abstract: 1N45 2N6917 STM15N45 STM-320 2N6913 MTM15N40 MTM5N40 STM15N40/3 2N6760
Contextual Info: SEMIC OND UCTOR TECHNOLOGY OSE D I öl3t>4Sö 511 HIGH VOLTAGE M O S POWER FIELD EFFECT T R A N SIST O R S N-CHANNEL STI Type Industry Type Breakdown Voltage Continuous Current Draln-Source on Resistance TransConductance Gate Threshold Voltage to gts min @ID

OCR Scan

2n6759 2n6760 2n6761 2n6762 +10

PDF