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Vishay Intertechnologies SIHG15N80AEF-GE3 Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHG15N80AEF-GE3				1	1 $3.16 10 $2.19 100 $2.03 1000 $2.03 10000 $2.03	Get Quote
Avnet Americas	SIHG15N80AEF-GE3	Tape & Reel		49 Weeks	500	1 - 10 - 100 - 1000 $1.47 10000 $1.36	Buy Now
Newark	SIHG15N80AEF-GE3	Bulk	534		1	1 $3.32 10 $2.98 100 $2.56 1000 $2.30 10000 $2.21	Buy Now
TTI	SIHG15N80AEF-GE3	Tube			500	1 - 10 - 100 - 1000 $1.39 10000 $1.39	Buy Now
Baumer Electric Ag MY COM M75N80 Sensor: precision limit switch
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MY COM M75N80				1	1 $393.85 10 $373.13 100 $373.13 1000 $373.13 10000 $373.13	Get Quote
Baumer Electric Ag MY COM G75N80/L Sensor: precision limit switch
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MY COM G75N80/L				1	1 $271.81 10 $257.50 100 $257.50 1000 $257.50 10000 $257.50	Get Quote
Baumer Electric Ag MY COM E75N80/L Sensor: precision limit switch
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MY COM E75N80/L				1	1 $449.32 10 $425.67 100 $425.67 1000 $425.67 10000 $425.67	Get Quote
Baumer Electric Ag MY COM G75N80 Sensor: precision limit switch
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MY COM G75N80				1	1 $322.85 10 $305.86 100 $305.86 1000 $305.86 10000 $305.86	Get Quote

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5N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.	Original	qw-r502-483	PDF
5N80 Abstract: UTC5N80 MOSFET 400V TO-220 N-Channel mosfet 400v 25A Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N80 is a N-channel enhancement mode Power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.	Original	qw-r502-483 5n80 utc5n80 mosfet 400v to-220 +1n-channel mosfet 400v 25a	PDF
5n80 Abstract: SMPS 30v Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.	Original	qw-r502-483 5n80 smps 30v	PDF
5n80 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80 Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch	Original	5n80l-ta3-t qw-r502-483 5n80	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80Z Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	5n80z qw-r209-065	PDF
2N80 Abstract: 5P30 Contextual Info: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTINGG LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14 J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _	OCR Scan	dip-14 dip-g14 2n100 3ki33 +43n100 5n100 2n80 5p30	PDF
Contextual Info: REVISIONS SYM 1 .2 5 4 4 B C D [3 1 .8 5 ]- [R 0.25] TYP. R .010 IZ T F T - AmpJwi -l= ] ][' [J .I I I -1- 1 -1 - L r = L ianolL EON, ZO NE ERN NO. PROPOSAL A APPRD. LCHAN CHANGE CONTACT TAIL FORMING FIGURE APR.24,07 LCHAN PER NOV 6 /0 7	OCR Scan	e07215	PDF
5n80 Abstract: SSH5N70 250M SSH5N80 Contextual Info: N-CHANNEL POWER MOSFETS 5N80/70 FEATURES • Lower Rds ON • Improved inductive ruggedness • Fast switching times ■ Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	ssh5n80/70 ssh5n80 ssh5n70 0g2a34s +25n80 250m	PDF
AEC-Q200-002 Abstract: RFLW5N1500 Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Inductors - Wire Bondable, Spiral for RF Circuits I INNOVAT AND TEC O L OGY RFLW N HN RF INDUCTOR O 19 62-2012 Vishay Electro-Films Wire Bondable RF Spiral Inductor Key Benefits • • • • • • •	Original	rflw5n1200a rflw5n8000b rflw5n1500a rflw5n1000a +6100is 102see 122see 21-apr-11 aec-q200-002 rflw5n1500	PDF
2N25 Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45 Contextual Info: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14 * Surface Mount G Lead Package IMPEDANCE ± 10%	OCR Scan	dip-14 dip-g14 300atthe 100pcen +15g1n25 1n100 2n100 3n100 5n100 2n25 5n50 5n30 smd 1n60 esc 5p20 5n35 3n25 5p30 5n80 3n45	PDF
Contextual Info: □IP & SM D DELAY LINES 10TAPS •14PIN S. IB PIN PACKAGES □IP SlSURFACE MOUNTINGGLEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14 * Surface Mount G Lead Package M ]3 12 J1 10 9. 8. IM PEDANCE 1 1 0% • 1 2 3 4 5 6 7 Rite Time n$«c 1 0 * 5% 20 30 40	OCR Scan	dip-14 dip-g14 015min 3kl45	PDF