5N80 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.

5N80

Abstract: UTC5N80 MOSFET 400V TO-220 N-Channel mosfet 400v 25A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N80 is a N-channel enhancement mode Power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.

5n80

Abstract: SMPS 30v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.

5n80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80 Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N80Z Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

2N80

Abstract: 5P30
Contextual Info: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _

Contextual Info: REVISIONS SYM 1 .2 5 4 4 B C D [3 1 .8 5 ]- [R 0.25] TYP. R .010 IZ T F T - AmpJwi -l= ] ][' [J .I I I -1- 1 -1 - L r = L ianolL EON, ZO NE ERN NO. PROPOSAL A APPRD. LCHAN CHANGE CONTACT TAIL FORMING FIGURE APR.24,07 LCHAN PER NOV 6 /0 7

5n80

Abstract: SSH5N70 250M SSH5N80
Contextual Info: N-CHANNEL POWER MOSFETS 5N80/70 FEATURES • Lower Rds ON • Improved inductive ruggedness • Fast switching times ■ Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

AEC-Q200-002

Abstract: RFLW5N1500
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Inductors - Wire Bondable, Spiral for RF Circuits I INNOVAT AND TEC O L OGY RFLW N HN RF INDUCTOR O 19 62-2012 Vishay Electro-Films Wire Bondable RF Spiral Inductor Key Benefits • • • • • • •

2N25

Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
Contextual Info: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%

Contextual Info: □IP & SM D DELAY LINES 10TAPS •14PIN S. IB PIN PACKAGES □IP SlSURFACE MOUNTING*GLEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* * Surface Mount G Lead Package M ]3 12 J1 10 9. 8. IM PEDANCE 1 1 0% • 1 2 3 4 5 6 7 Rite Time n$«c 1 0 * 5% 20 30 40