BSY54 Search Results

rca 101m

Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

high voltage npn

Contextual Info: Small Signal Transistors TO-39 Case Continued I T Y PE NO. D ESC RIPT IO N v C B O v C E O v EB O *CBO v C B O (V) (V) (V) M (HA) ‘VC E R MIN N P N A M P U S W IT C H 60 25 5.0 0.10 BSYS3 N P N A M P U S W iT C H 75 30 7.0 BSY54 N P N A M P L / SW IT C H

Contextual Info: 30E 3> un • 7^237 0D31Q77 T ■ -Z3 B S Y 53 B S Y 54 S G S -T H O M S O N laJÛTTOMDigS S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESC RIPTIO N The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in general purpose amplifiers.

BC232A

Abstract: PN544 2SC9410 TD-101 SA2716 LOW-POWER SILICON NPN ZTX223 NA31XH TD101 2MC509
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

BSY54

Abstract: BSY53 BSY53-BSY54
Contextual Info: BSY53 BSY54 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, intended for use in general purpose amplifiers. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol

BSY54

Abstract: BSY53
Contextual Info: r= Z ^7# SG S -TH O M S O N RjincœiiLiCTœffiines BSY53 BSY54 GENERAL PURPOSE AMPLIFIERS D E S C R IP T IO N The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, in­ tended for use in general purpose amplifiers. IN T E R N A L S C H E M A T IC D IA G R A M

BSY52

Abstract: BSY53 BSY54 BSY55 BSY56 BSY88 BUY47 BUY48 BUY49S BUY68
Contextual Info: small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO VcEO v EBO tCBO v CBO (V) (V) (HA) (V) (V) *'CEO *‘CES *ICe v *VCER BSY52 NPN AMPL/SWITCH BSY53 NPN AMPL/SWITCH BSY54 NPN AMPL/SWITCH MIN MIN MIN "*<CER 60 25 5.0 0.10 75 75

TO-39 1000 V

Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

bsy85

Abstract: BSW54 BSW65 MA8003 BSY52 BSY86 bsy90 CL168 TO-92B BSW61
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S >• TYPE NO. OC < -1 o a. H FE V C E S A T f T min Cob C O M PLE­ max max M EN TA R Y (MHz) (pF) TYPE CASE Pd (mW) 'c (A ) V C EO (V ) min 0.8 0.8 0.8 0.8 0.8 1 40 30 30 40 40 80 100 40 100

BSY55

Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

bc140

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

BSY55

Abstract: Scans-00107830 2N2222A zetex BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

2N244

Abstract: bfy5
Contextual Info: TO-39 METAL-CAN PACKAGE TRAN SISTO RS NPN Type No. tßO m Max VCB (V) hFE VCB0 VCEO VEBO (V) Min (V) Min (V) Min 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 lc •& VCE (mA) (V) Min Max (MA) (V) Max 0.75 15 10.0 1.00 200 30.000 10.0 50.000

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

40327

Abstract: 40347 BSY52 MM3001 MM5415
Contextual Info: small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO V cE O (V> (V) v EBO *CBO VCBO (HA) (V) (V) h :E h @ >c @ v CE VCE(SA T ) @ * C (m A) (MHz) (m A) (V) (V) c 0b <pF) *on (ns) to ff (ns) (dB) *TYP *TYP *TYP TYP *TYP *'CEO *'CES

2N2195

Abstract: 2N198 2N1987 BFY72 BSY52 BSY53 BSY54 CL150
Contextual Info: b3E J> CONTINENTAL DEVICE INDIA • 23033^4 QQQGOTl 2Tb ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Typ» V CBO V CEO V EBO *CBO No. (V) Min (V) M'm (V) Min (MA) Max 75 30 7 BSY53 0.010 V CB hFE 75 30 7 0.010 O 'c * (mA) V CE V C E (S a t)& V B E (S a t)° 'c

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

transistor bsw 67

Abstract: transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A
Contextual Info: Concise Catalogue 1996 P hilip s Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors GENERAL-PURPOSE LOW-FREQUENCY BIPOLAR TRANSISTORS ratings type num ber P,o. max. mW hpE @ min./max. (V) 'c max. (mA) BC107

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

mm5416

Abstract: switch NPN se7001 BSY55-BSY56 MJ420 MM420
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO ICBO @ (V) ( A) *VCER *ICEO *ICES *ICEV *ICER VCB (V) hFE @ IC @ VCE VCE (SAT ) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP

BSy38

Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns