2N138 Search Results

Contextual Info: 2N1388 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)45 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1384 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)240m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)3.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.

Contextual Info: 2N138A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0uØ @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N1387 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)6.0 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)5.0m

Contextual Info: 2N1380 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12ã V(BR)CBO (V)12 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.27 h(FE) Max. Current gain.330

AC122

Abstract: 2S856 OC75N SK3006 oc75 2S8175 2N2613 pnp oc75 2S8135 Low-Power Germanium PNP
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number NKT223 2N1384 2N1384 2N1384 NKT304 2G320 AC116 AC116 2N565 2N566 10 ~~~:~ 2S8171 2S8171 OC75 OC75 2N226 2N414 2N414A UPI1307 15 20 ~~JJg; NKT139 2N805 2N806 2N428 ASY54N 2N2930 2N2541 2S8135 25 30 ~~~1;j502~

Contextual Info: 2N1381 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.27 h(FE) Max. Current gain.330

Contextual Info: 2N1383 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.27 h(FE) Max. Current gain.165

2S877

Abstract: diode GG 14 2S8370 Low-Power Germanium PNP AF201U TA269 2N270 2s875 2G108 2N404
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2S843 MA899 MA899 TA269 TA269 TA269 2N404 2N1370 2N1374 2N1382 ~~~~g~A 15 20 2N1287 2N658 1340 GT20 GT20 GT83 GT83 TAM14 +~~: 25 30 TA14 TR18 TA18 TR18 2S8185 2S8111 2N249 2N291 ~~~~OU 35 -40 AF201U 2N131

Contextual Info: 2N1382 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.45 h(FE) Max. Current gain.165

Contextual Info: 2N1389 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50â V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150’ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1386 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)6.0 V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)5.0

Contextual Info: 2N138B Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0uØ @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N138 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)12 I(C) Max. (A)20m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)40’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)6.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2n1841

Abstract: 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

D634 transistor

Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2SA143

Abstract: transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2N1377

Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180

2N1384

Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
Contextual Info: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.