2SC468 Search Results

ic 748

Abstract: 2SC4688
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage

NPN VCEo 1000V

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC4686/4686A TV D Y N A M I C F O C U S A P P L I C A T I O N S . U n i t in m m H IG H V O L T A G E S W I T C H I N G A P P L I C A T I O N S . 10±0.3 , H IG H V O L T A G E A M P L I F I E R A P P L I C A T I O N S .

2SA1803

Abstract: 2SC4688
Contextual Info: JMnic Product Specification 2SA1803 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING see Fig.2

2SA1804

Abstract: TO3PFM 2SC4689 Jmnic
Contextual Info: JMnic Product Specification 2SA1804 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4689 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING See Fig.2

2SA1804

Abstract: 2SC4689
Contextual Info: Product Specification www.jmnic.com 2SC4689 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFM package ・Complementary to 2SA1804 ・Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ・Power amplifier applications PINNING PIN

C4684

Abstract: 2SC4684 IC-106 05A800
Contextual Info: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)

2SC4682

Contextual Info: 2SC4682 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4682 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)

2SC4688

Abstract: 2SA1803
Contextual Info: SavantIC Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·Complement to type 2SA1803 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

C4681

Abstract: 7B1A 2SA1802 2SC4681
Contextual Info: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)

2SC4680

Abstract: DSA003637
Contextual Info: 2SC4680 Silicon NPN Epitaxial ADE-208-1118A Z 2nd. Edition Mar. 2001 Application VHF / UHF high frequency switching Features • Low Ron and high performance for RF switch. • Capable of high density mounting. Outline MPAK 3 1 2 Note: Marking is “XU–”.

Contextual Info: TOSHIBA 2SA1803 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 803 Unit in mm POWER AMPLIFIER APPLICATIONS • • r 15.8±0.5,^ Complementary to 2SC4688 Recommend for 40W High Fidelity Audio Frequency Amplifier output Stage. 03.6±O .2 M A X IM U M RATINGS Ta = 25°C

C4688

Abstract: 2SA1803 2SC4688
Contextual Info: 2SC4688 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4688 Power Amplifier Applications Unit: mm • Complementary to 2SA1803 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C Characteristics

2SC4682

Contextual Info: TOSHIBA 2SC4682 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4682 Unit in mm STROBE FLASH APPLICATIONS 5.1 M AX. M EDIUM PO W ER AM PLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE (1) = 800-3200 (Vce = 1 V, Ic = 0.5 A) : hFE (2) = 500 (Typ.) (VCE = 1 V, IC = 3 A)

2SA1802

Abstract: 2SC4681
Contextual Info: T O S H IB A 2SC4681 2SC4681 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE 1 = 200-600 (Vce = 2 V, IC = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2 V, Ic = 3 A)

2SC4686

Abstract: 2SC4686A
Contextual Info: TOSHIBA 2SC4686,2SC4686A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE 2SC4686, 2SC4686A Unit in mm TV DYNAMIC FOCUS APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS HIGH VOLTAGE AM PLIFIER APPLICATIONS r 2 '^ " 0 <v> • • High Voltage : V q e O —I^OOV Max.

2SA1804

Abstract: 2SC4689
Contextual Info: TOSHIBA 2SC4689 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4689 Unit in mm POWER AMPLIFIER APPLICATIONS • Complementary to 2SA1804 • Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. . 1 5 . 8 ± 0.5 i 3.5 <¿3-610.2 MAXIMUM RATINGS Ta = 25°C

2SA1803

Abstract: 2SC4688
Contextual Info: TO SH IBA 2SC4688 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in mm 15.8 ± 0.5 Complementary to 2SA1803 Recommend for 40W High Fidelity Audio Frequency Amplifier n n f n n f S fa c rp MAXIMUM RATINGS Tc = 25°C

2SC4686A

Abstract: 2SC4686
Contextual Info: TO SH IBA 2SC4686,2SC4686A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE 2SC4686, 2SC4686A Unit in mm TV DYNAMIC FOCUS APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS HIGH VOLTAGE AMPLIFIER APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO •

2SC4685

Contextual Info: TO SH IBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800~320u (Vc e = 2V> Ic = 0-5A) •• • • H i (z j — nv/n« '> >."•“ “ •/ v *

2SA1804

Abstract: 2SC4689
Contextual Info: TO SH IBA 2SC4689 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC4689 Unit in mm 15.8 ± 0.5 Complementary to 2SA1804 Recommend for 55W High Fidelity Audio Frequency Amplifier n n f n n f S fa c rp MAXIMUM RATINGS Ta = 25°C

2SA1803

Abstract: 2SC4688
Contextual Info: TO SH IB A 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 PO W ER AM PLIFIER APPLICATIONS U n it in mm . 15.8 + 0.5 i C om plem entary to 2SA 1803 • Recom m end for 40W H igh F id elity Audio Frequency A m plifier ?S3.6±0.2 - k : -

A1803 toshiba

Abstract: 2SA1803
Contextual Info: 2SA1803 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1803 Power Amplifier Applications Unit: mm • Complementary to 2SC4688 • Recommended for 40-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings Tc = 25°C Characteristics

Contextual Info: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)

Contextual Info: 2SC4682 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4682 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max)