7B1A Search Results

Contextual Info: PW-MDLD-2-7B1A Uniti nn il PW-MDLD JEDECH-K E I AJH'K m 1 ic - 2-7B1A P-HSIP3-2.30B Aug.2000

Contextual Info: SILICON PNP TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. • • U n it in mm High Voltage : V cB O = —400V Low Saturation Voltage : VcE sat = —IV (Max.) (IC = —100mA, Iß = —10mA) 1. 2. 3. JEDEC EIAJ T0SHIBA(A)2-7B1A (BJ2-7B2A

7B1A

Abstract: 2GWJ2C42 U2GWJ2C42 TOSHIBA RECTIFIER
Contextual Info: 2GWJ2C42,U2GWJ2C42 TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 2GWJ2C42,U2GWJ2C42 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : IO = 2 A Repetitive Peak Reverse Voltage

saa7138

Abstract: FT150EX-24 FT150EX-28 FT150EX-32 FT150EX-36 FT250DX-10 FT250DX-12 FT250DX-16 FT250DX-20 FT250DX-4
Contextual Info: - 12Si s FT150EX-24 FT150EX-28 FT150EX-32 FT150EX-36 FT250DX-10 FT250DX-12 FT250DX-16 FT250DX-20 FT250DX-4 FT250DX-6 FT250DX-8 FT250DY-10 FT250DY-12 FT250DY-16 FT250DY-4 FT250DY-6 FT250DY-8 FT300DX-10 FT300DX-12 FT300DX-16 FT300DX-20 FT300DX-24 FT300DX-4 FT300DX—6

TF340M

Abstract: TF620M SC16C120 SC10C-100 TF320M-A SC20C120 SC16C-120 SC20C-80 RTM 80-D SA J-180
Contextual Info: - IO Æ * 33 & tt £ Vr s m V T F320M TF320M-A TF340M TF340M-A TF340M-B ÏF620M TF640M SC10C-100 S C10C— 1 0 0 (D) S CIOC— 12 0 SCi OC— 120(D) S C 10 C — 40 S C10C— 4 0 (D) SC10C-60 SCIO C— 6 0 (D) SCI OC— 80 SC10C-80(D) S CI6C— 10 0 SCI 6 C— 120

5P4M

Abstract: 3P5MH CA11CA CA11CF CA12DA CA12DF CA12EA CF16C CF16E H-16
Contextual Info: - é m a V 1. 60 1. 60 1. 60 1. 60 1. 40 1. 40 1. 40 1. 40 1. 60 1. 60 1. 40 1. 40 1. 40 1. 40 1.40 1. 40 1. 40 1. 40 1. 40 2. 20 2.20 2. 20 2. 50 2. 50 2. 50 1 40 1. 40 1. 40 1.40 2.50 2.50 o <IU en 1. 40 1. 40 1. 40 1.40 1. 40 i jn 1. 40 1. 40 dv/dt Vgd (m in)

CP08G

Abstract: cp08e CQ08G CL16C CL16D CL16E CL16F CL16G CL16J CM16C
Contextual Info: - a n Vtm Vgd VGT V Tj CC) ITM (A) tt dv/dt (min) (min) *typ *typ Tq IH IGT (V) (mA) Te (°C) (V) Tj (°C) vo (V) (V ß s) Tj CC) Vd (V) ( ß s) Tj <°C> Vr (V) ITM (A) *typ (mA) Rth (tt2) m m æ CC/W) 1. 1. 1. 1. 1. 50 50 50 50 50 25# 251 25# 25# 25# 320

PD70F35

Abstract: R01US0001EJ v850E2M architecture Users Manual SUS 303 EZ CG 555 timer guard ring TT 2188 v850e2m NAS11 TAPA2 B32R
Contextual Info: User Manual V850E2/MN4 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

29rd120

Abstract: 21RC60 SF2500Ex21 39RC60 21RC80 11RC60 29RD80 29rd60 21RC100 SF1500EX24
Contextual Info: -27 n Ä V 1.75 1. 55 2. 40 1. 55 1. 55 1. 55 1. 55 1. 82 2. 50 1. 50 1. 50 1. 50 1. 50 2. 30 2. 30 2. 30 2. 30 2. 30 2.30 2. 30 2. 30 2. 20 2.20 2. 20 2. 20 2.20 2. 20 2. 20 2. 20 1. 92 1. 92 1. 92 1. 92 1. 92 1. 92 2. 10 2. 10 2.10 2. 10 2. 10 dv/dt (min)

SF400U27

Abstract: sf500u27 SF500U25 ei 280000 SF1000EX24 SF800R26 SF400L27 SF500EX26 SF300R13 SF400Q27
Contextual Info: - 24 - * M £ a « V r sm V SF300Q13 SF300R13 SF300Ü13 SF400L27 SF400N27 ms SF400Q27 SF400R27 SF400U27 SF500B27 SF500D27 SF500EX25 SP5QQEX2S SF500G27V SF 500 J 27 SF500LZ7 SF500N27 SF500Q27 SF500R27 SF500U25 SF500U26 SF500Ü27 SF500Y25 SF500Y26 SF600B27

FT1500DL-20

Abstract: FT1500DL-24 FT1500DL-4 FT1500DL-6 FT1500DL-8 FT1500DV-70 FT1500DV-80 FT1500GV-70 FT2500BH-56
Contextual Info: K Ei °C T stg fff —v o O O O O O o o o o o o o o o o o e o c o CO e o O O O O O o o o o o c o e o e o e o eo O O O O O o o o o o CO CO CO CO CO o o o o o o esj esj c o esi o o o o o LO LO LO LO LO o o o o o LO1LO IO LO LO o o o o o LO LO LO LO LO o o o o o

61a17

Abstract: E11AB BFE 81A
Contextual Info: 123456789 1 2ABBCD91BCEFE9ECBE1 9 1 92DBB9 1 BB9BCAE9 716351B7B7978916789ABC91871787BA81 977E1 81 8A1 D !1 "71 981 BAE799ABF1 71 6351 91 79871 A1 #B81 1 7B$AB"8E71 977E1D !1$7%B791A1EA919789&71 7"#771 81

7B1A

Abstract: toshiba mosfet
Contextual Info: Power Mold Package Straight Lead PW-Mold Package Outline Dimensions Outline Dimensions Unit: mm 1.7 ±0.2 6.8 max 0.6 max 5.5 ±0.2 5.2 ±0.2 0.95 max 12.0 min 0.6 ±0.15 2.3 2.3 3 0.6 max 2 1 2 3 2.5 max 1 1.1 ±0.2 (Bottom view) Toshiba package name Toshiba

7B1A

Abstract: PW-Mold
Contextual Info: Power Mold Package Straight Lead PW-Mold パッケージ 外形図 パッケージ形状および寸法 単位 : mm 1.7 ±0.2 6.8 max 0.6 max 5.5 ±0.2 5.2 ±0.2 0.95 max 12.0 min 0.6 ±0.15 2.3 2.3 3 0.6 max 2 1 2 3 2.5 max 1 1.1 ±0.2 (Bottom view) 東芝パッケージ名称

EBC91

Abstract: BA871
Contextual Info: 12345657 1 7 1 9E979AF8FCE7 71 61 91 71 87791 77B1 A1 6789ABC91 61 !"C1 A1 EBAEA8BA""7B91 1 A8E#1 9#77E1 D$%1 E!#!"79F1 71 61 !91 !8C1 7!&B791 A1 71 635'1 &1 B7 &E7(1 81 EA91 C1 

i251

Abstract: CR10C12 CR03AM-12 CR03AM-2 CR03AM-4 CR03AM-6 CR03AM-8 CR10C-16 CR10C-2 CR10C-4
Contextual Info: o o O O O CD O o O O O O O O O O O O o o o o O O LA LA LA O O O O O -<< '<9a o o o o o o TPC O M M W 1 1 1 1 1 o o o o o w w w w w 1 1 1 1 1 o o l o o o o ^j< ^a< l l l o o o o 1 o 1 o 1 o 1 1 o 1 o 1 o 1 o 1 1 o 1 o o o -*J< -T}< 1 1 1 LO LO LO LO LO CM CM CM CM CM

2SA122

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1225 POWER AMPLIFIER APPLICATIONS. Unit in nun DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency : fT=100MHz Typ. . Complementary to 2SC2983 MAXIMUM RATINGS (Ta-25°C) SYMBOL RATING Collector-Base Voltage

V850E2M 32-bit Microcontroller Core Architecture

Abstract: v850E2M architecture Users Manual uPD70F35
Contextual Info: User Manual V850E2/MN4 User’s Manual: Hardware 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

CA-78

Contextual Info: 1 12345678934AB62A98CDE94F28B32BBD3B8 2341567897ABCD1EAD9F8D11FCD9CF1 2362B28 8 3 236AF87D 28 8 118 !"#$"8 4A8C1 CDF91 1 1 1 1 1DA92A98D%8&24 238'43B884A 8"8D%8 4948B&2298 6EE8'2849D549674EE82A9232 86A8&24 23B84A 8%DD923B 8*E24B28%6EE86A89&28

B1678B

Contextual Info: 6 1 1 12324567589ABCBDE6F5856A354A3BAC636 :;<=0+6 :A82C2%6>B368BA34BCC546;4BD4%%546 F395536 FB82%5A36<54545A856?B&'617@*-66 :54BA6+&*6 256F35'6,* 0*0+ 6 1 68B3CA6345536CDB66 !"6#A356$ADB%6

3S4M

Abstract: 308RLE30 359RGA 308RLE40 308RLE60 308RLF60 308RLF80 353PLG100 353PLG120 358RLE10
Contextual Info: 308RLE30 308RLE40 308RLE60 308RLE80 308RLF60 308RLF80 353PLG100 353PLG120 358RLE10 358RLE20 358RLE30 358RLE40 403PLE20 403PLE30 403PLE40 403PLE60 403PLE80 403PLH100 403PLH120 503PLF100 503PLF120 503PLH100 503PLH120 1003PLF100 1003PLF120 1003 PLH80 100 3PLH100

SF5D14

Abstract: SF10D41 SF5D42 SF5J13 SF5J42 SF10GZ47 SF8D41 SF8J41 SF5B42 SF5D13
Contextual Info: - 18 - * 5È di/dt 121 It s m 1 50Hz) t=2-10ms Tj Vd (A) (A2 S) (V) (V//< s) (°C) 80 32. 00 60 18. 00 90 40. 00 80 32. 00 100 80 32. 00 100 au 32. 00 60 18. 00 60 18. 00 90 40. 00 80 32. 00 100 80 32. 00 100 oo nn 80 L. \jyj 80 100 1/2VDRM 32. 00 60 18. 00

S6565G

Abstract: S6612F s6612g S6565F SH5J12U SH16J12U S6785G equivalent S6565F equivalent SH8G41 SH16J12
Contextual Info: - 58 - a s Vr s m Vr r m Vd r m V TFH340M S6565F S6565G S6612F S6612G S6785F 56 7 8 ¡3li SH0R3B42 SH0R3D42 SH2B41 SH2D41 SH2G41 SH5B13 SH5D13 SH5F13 SH 5G 13 SH5G41(LC2) SH5H13 SH5J12U SH5J13 SH8G41 SH16B13 SHL6D13 SH16F13 SH16G13 SH16H13 SH16J12U SH16J13