2SC4685 Search Results

2SC4685

Contextual Info: TO SH IBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800~320u (Vc e = 2V> Ic = 0-5A) •• • • H i (z j — nv/n« '> >."•“ “ •/ v *

Contextual Info: 2SC4685 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA)

Contextual Info: TOSHIBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain ^FE 1 —800~3200 (VcE = 2V, Ic = 0.5A) hFE (2) —250 (Min.) (V£ e = 2V, Ic = 4A)

C4685

Abstract: 2SC4685
Contextual Info: 2SC4685 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4685 ○ ストロボフラッシュ用 ○ 中電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)

2SC4685

Contextual Info: TO SH IBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 8.3 MAX. 0 3.1 ±0.1 5.8 • • • High DC Current Gain : hF E 1 = 800-3200 (VCE = 2V, IC = 0.5A) : hFE(2) = 250 (Min.) (VCE = 2V, IC = 4A)

2SC4685

Abstract: C4685
Contextual Info: 2SC4685 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40

2SC4685

Contextual Info: TOSHIBA 2SC4685 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. 53.1 ±0.1 • High DC Current Gain : hFEU = 800-3200 Vce = 2V, Ie = 0.5A) : hFE(2) = 250 (Min.) (VCE = 2V, IC = 4A)

2SC4685

Contextual Info: TOSHIBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm MEDIUM PO W ER AM PLIFIER APPLICATIONS. ¿3.1 ±0.1 5.8 • High DC Current Gain : hF E l = 800-3200 (V c e =2V, IC = 0.5A) : hjrE( 2) = 250 (Min.) (V ce = 2V, Ic = 4A)

C4685

Abstract: 2SC4685
Contextual Info: 2SC4685 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA)

Contextual Info: SILICON NPN EPITAXIAL TY P E 2SC4685 U nit in mm STROBE FLASH APPLICATIONS. M E D IU M POW ER AMPLIFIER APPLICATIONS. • High DC C urrent Gain : hF E l = 800-3200 ( V = 2V, Ic = 0.5A) : hpE (2) = 250 (Min.) (V ce= 2V , Ic = 4A) Low Saturation Voltage : v CE(sat) = 0-5V (Max.) (Ic = 4A, Ig = 40mA)

Contextual Info: TOSHIBA 2SC4685 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. ¿3.1 ±0.1 5.8 • • • High DC Current Gain : h F E l = 800-3200 (V c e = 2V, IC = 0.5A) : hFE(2) = 250 (Min.) (V c e = 2V> Ic = 4A)

C4685

Contextual Info: 2SC4685 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40

A1241

Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
Contextual Info: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

C2785

Abstract: transistor B1202 transistor c2785 c2785 transistor transistor a1175 a1175 transistor M9-1-473J M9-1-332J MD910 printer mechanism TC74HC14P
Contextual Info: Service Manual DOT MATRIX PRINTER MODEL iDP3110 Rev. 1.00 Newly issued on Oct, 1994 iDP3110 Service Manual REVISION Rev.No. Rev.1.00 Date Oct 1994 Comment Newly issued CITIZEN iDP3110 Service Manual Contents 1. How to remove the Upper Cover. 1

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

TO-3P

Abstract: 2SC3303 2sc3783 2sc3233 2sc2562 2sa1329 2sd717 2sc2655 2sb754
Contextual Info: Transistors Industrial use Regulator T ransistors F1 Appli­ cation £ 3 9 Max Rating (Tc=25"C) Type No. V obo{V) VCHO(V) 10(A) Appli­ cation Package Pc(W) TJCO Max Rating (Tc=25*C) Type No. V c b o (V) VCEO(V) Package lc(A) Pc(W) 2SC3075 0.8 10 Power Mold

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4