C4685 Search Results

Contextual Info: C4685 TOSHIBA Transistor Silicon NPN Epitaxial Type C4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA)

C2785

Abstract: transistor B1202 transistor c2785 c2785 transistor transistor a1175 a1175 transistor M9-1-473J M9-1-332J MD910 printer mechanism TC74HC14P
Contextual Info: Service Manual DOT MATRIX PRINTER MODEL iDP3110 Rev. 1.00 Newly issued on Oct, 1994 iDP3110 Service Manual REVISION Rev.No. Rev.1.00 Date Oct 1994 Comment Newly issued CITIZEN iDP3110 Service Manual Contents 1. How to remove the Upper Cover. 1

C4685

Abstract: 2SC4685
Contextual Info: C4685 東芝トランジスタ シリコンNPNエピタキシャル形 C4685 ○ ストロボフラッシュ用 ○ 中電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)

2SC4685

Abstract: C4685
Contextual Info: C4685 TOSHIBA Transistor Silicon NPN Epitaxial Type C4685 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40

C4685

Abstract: 2SC4685
Contextual Info: C4685 TOSHIBA Transistor Silicon NPN Epitaxial Type C4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA)

C4685

Contextual Info: ± TABLE BACKPLANE INSULATOR MODULE K L p T O T A L N U M B E R OF SIGNAL CONTACTS T O T A L N U M B E R OF GROUND S H I E L D S 468-X009-0XX 468-0009-072 8 (16. 00) 18.0 36 9 468-X010-0XX 468-0010-072 9 (18. 00) 20.0 40 10 468-X025-0XX 468-0025-072 24 (48.00)

C4685

Contextual Info: C4685 TOSHIBA Transistor Silicon NPN Epitaxial Type C4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40