2N643 Search Results

2N6437

Abstract: 2N6339 2N6341 2N6438
Contextual Info: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —

2N6339

Abstract: 2N6340 2N6338 2N6341 2N6436
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier

Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

High voltage fast switching power transistor pnp

Abstract: 2N6438 2n6437
Contextual Info: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Pow er PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —

2N6432

Abstract: 2N6432 MOTOROLA 2N6433
Contextual Info: MOTORGLA SC XSTRS/R F 1EE 0 I b3b725M üOñbMSa T | r ^ 7-j3 2N6432 2N6433 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Symbol 2N6432 2N6433 U nit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 200 300 Vdc Emitter-Base Voltage

2N6439

Abstract: 2n6439 TRANSISTOR
Contextual Info: 2N6439 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability

Contextual Info: 2N6438+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25

TIP360

Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436

Contextual Info: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N 6438* High-Power PNP Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry power am plifier and sw itching circuit applications. • • • • • High C ollector-Em itter Sustaining Voltage —

n643

Contextual Info: MOTOROLA Order this document by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2 N 6 4 36 2 N 6437 2N6438* H igh-Pow er PNP Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry pow er am plifier and sw itching circuit applications. • • • •

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

Contextual Info: 2N6430 2N6431 2N6432 2N6433 NPN PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6430 series devices are complementary small signal silicon transistors manufactured by the epitaxial planar

Contextual Info: 2N6437+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25

Contextual Info: ^E.m.i-Condu.cko'i ^Pioaacti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the

BUT36

Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts

2N6439

Contextual Info: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

2N6432

Abstract: 2N5183 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477 BCX22
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION 2NS183 NPN AMPUSW ITCH 2N6430 NPN HIGH VOLTAGE 2N6431 NPN HIGH VOLTAGE BVCBO BVCEO bvebo ICBO (V) on (V) (HA) MIN MIN MIN MAX *ICES *ICEV 18 18 7.0 0.5 200 200 6.0 300 300 6.0 @ lc h FE

2n6436

Abstract: 2N6438
Contextual Info: 2N6436 2N6437 2N6438 MECHANICAL DATA Dimensions in mm inches HIGH POWER PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. DESCRIPTION 5.08 (0.200)

2N6436

Abstract: 2N6437 2N6438
Contextual Info: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)

2N6439

Abstract: UT25 coaxial VK200 ferrite choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

Contextual Info: 2N643 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)29â V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)71õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)7.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.45Â

Contextual Info: 2N6432 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)250n @V(CBO) (V) (Test Condition)160 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)20m

2N6431

Abstract: 2N6430
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise SYMBOL DESCRIPTION VCEO

2N6436

Abstract: 2N6437 2N6438 2N6338 2N6341
Contextual Info: SavantIC Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6338~2N6341 APPLICATIONS