BSY62 Search Results

TH 2190 Transistor

Abstract: BSV62 BSY62 TRANSISTOR K 2191 BSV18 BSY17 BSY18 BSY63 Q60218-Y17 Q60218-Y18
Contextual Info: 2SC » • ÖS3SbDS 0QG4fl24 3 « S I E G j NPN Transistors for Switching Applications n -SIEMENS AKTIENGESELLSCHAF . B S Y17 BSY 18 BSY62 BSY 63 BSY 17, BSY 18, BSY 62, and BSY 63 are double-diffused epitaxial NPN silicon planar RF transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

transistor w1w

Abstract: 2N708 2N743 BSY17 BSY18 BSY62A BSY62B Q60218-Y17 Q60218-Y18 Q60218-Y62-A
Contextual Info: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, BSY 62 and B S Y 63 are double-diffused epitaxial NPN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor B S Y 17 corresponds to type 2 N 7 4 3 ,

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BSY17

Abstract: BSY18 transistor w1w 2N708 BSY62 2N743 BSY62A BSY62B Q60218-Y17 Q60218-Y18
Contextual Info: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, B SY 62 and B S Y 63 are double-diffused epitaxial N PN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor B S Y 17 corresponds to type 2N 7 4 3 ,

TRANSISTOR K 2191

Abstract: TH 2190 Transistor BSY62
Contextual Info: 2SC » • ô 2 3 S b D S 00G4fl24 3 « S I E G j - ¡'- ’h S '- o f NPN Transistors for Switching Applications n -S I EM EN S A K T I E N G E S E L L S C H A F . B S Y 17 BSY 18 B S Y 62 BSY 63 BSY 17, BSY 18, BSY 62, and BSY 63 are double-diffused epitaxial NPN silicon planar RF

2N6432

Abstract: 2N5183 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477 BCX22
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION 2NS183 NPN AMPUSW ITCH 2N6430 NPN HIGH VOLTAGE 2N6431 NPN HIGH VOLTAGE BVCBO BVCEO bvebo ICBO (V) on (V) (HA) MIN MIN MIN MAX *ICES *ICEV 18 18 7.0 0.5 200 200 6.0 300 300 6.0 @ lc h FE

2n5183

Abstract: BSV68 2N6432 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477
Contextual Info: Small Signal Transistors TO-18 Case Continued D E S C R IP T IO N T Y P E NO. (V) 2N5183 NPN AMPUSWITCH (V) (V) <|lA) MIN M IN M IN MAX •IC E S *IC E V 18 18 7.0 0.5 le hFE BVCBO BVCEO BVEBO C BO @ VCBO (mA) (V) 12 M IN MAX 75 400 @ V C E V C E (S A T ) 1C C o b

2n5183

Abstract: BC187 Small Signal Transistors TO-18 Case
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2n744

Abstract: LM3661TL-1.40
Contextual Info: Small signal Transistors TO-18 Case T Y P E NO. DESC RIPTIO N 00 V (V) (HA) MIN MIN MIN MAX *IC ES " IC E V @ 1C @ V C E V C E(SAT ) @ «C Cob hFE B V C B O B V C EO B V e b O C B O * V C B O <raA) (V) MIN M AX (V) (V) (mA) (PF) M AX M AX ton toff (ns) IT

bsy62

Abstract: BSY18 transistor w1w 2N708 2N743 KC-C10 BSY17 BSY62A Transistor 2N708 Q60218-Y17
Contextual Info: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, BSY 62 and BSY 63 are double-diffused epitaxial NPN silicon planar RF transistors in a case 1 8A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor BSY 17 corresponds to type 2N 743,

2N3014 TO-18

Abstract: 2N2539 2N3829 2n4014 datasheet BC477 2N718A BSV68 30-40-500 BC187 BC477 equivalent
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

BC187

Abstract: AMPL BSV68 BSX19 equivalent 2N5183 2N6430 2N6431 2N6432 2N6433 BC110
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ µA) (V) (V) (V) (µ MIN MIN MIN VCB (V) MAX hFE MIN @ IC @ VCE VCE (SAT) @ IC (mA) (V) (V) (mA) MAX MAX COB fT NF (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

LM3661TL-1.40

Abstract: BSX20 2N719A
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

KF520

Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
Contextual Info: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BSX21

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO bvebo !CBO Ct VCBO (V) (V) (V) (HA) MIN MW MM MAX 'ICES *'ICEV h RE @ lc (mA) (V) MIN 0 VCE VCE(S/V T )0 » c Cob (V) MAX 00 (mA) MAX fr NF ton toff <PF) (MHZ) (dB) (ns) (ns)

Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO bvebo h FE ICBO @ VCBO V (V) (V) (|iA) MIN MIN MIN MAX ICES "ICEV @ic (itlA) (V) NF ton toff (PF) (MHZ) (dB) (ns) (ns) @ VCE VCE(SA T) @ IC Cob (V) MIN MAX 00 (ItlA) MAX MAX it MIN MAX MAX MAX