T066 Search Results

m9530

Abstract: C094438
Contextual Info: 00 LU CU LU in co FREEPORT IL L IN O IS . U S A A OF D IV IS IO N CIRCUIT MADE A WITH TOGGLE LEVER IN CA TA LO G LISTING MICRO SWITCH 2TL48 SERIES SWITCH-T066LE HONEYW ELL CATALOG LISTING CHART 1 FED. MFG. CO DE »1929 T H I S D R A W I N G C O V E R S A P R O P R I E T A R Y I T E M A N D IS T H E P R O P E R T Y O F M I C R O S WI T C H . A DI VI S I O N O F

3055 t03

Abstract: t066 2N3054 2N3055 bdy20 2n3054 audio PN3054
Contextual Info: NPN Silicon Power Transistors NPN Silicon Power Transistors fo r audio amplifiers and switching applications C h aracte ristics at T case “ M a x im u m ratings i T yp e T03 T066 T066 Plastic T 0 6 6 T O 66 T03 60 80 50 50 55 60 0.2 (0.1) (0.1) (0.1) (0.1)

Contextual Info: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Polarity Package lc_cont Hfe_at V ce jc PNP NPN NPN NPN NPN NPN NPN NPN NPNP NPN T03 T03 T066 T039 T039 T039 T092 T092 T039 T 03 15 15 10 7 3 10 5 5 20-100 200min 20-100 20-100 20-100 20-100 50min

Contextual Info: Crimp Connector, Board-In Type DP-30 Series 2.0mm Spacing ● Terminal 7.9 Crimp Connectors 0.4 • Features Applicable Electrical Wire Electrical Sheath Dia. Wire Size 適合電線範囲 電線被覆外径 mm （AWG) Part No. 図番 W-T0663-11#01F 22~30

Contextual Info: SEMELAB LTD 3?E J> 8133107 00D005S 7 • SMLB ■iMIJSMJ:1 Type No. Option 2N6038 Polarity Package < o m O h * tfftr rtfm iii •c cont hF E @ V c e /1c fT Pd NPN NPN NPN PNP PNP SOT 3 2 SOT32 T063 T066 TO 3 60 80 100 55 60 4 4 29 4 12 750-15k 750-15k 20-100

W-D3403-1N

Abstract: 1n01
Contextual Info: Crimp Connector, Board-In Type DP-30 Series 2.0mm Spacing Terminal 7.9 Crimp Connectors 0.4 • Features Applicable Electrical Wire Size AWG Part No. W-T0663-11#01F 22 Electrical Wire Sheath Dia. mm) 30 1.5 ■ Specifications Housing : Polyamide (PA), Natural Color, 94V-0

Contextual Info: SEMELAB LTD 37E D • ¿1133187 000DD27 r TVpe No. Reliability Polarity Option Package v CEO ■c cont hFE@ VCE/'C ir »T pd 16 16 50 50 50 80 80 60 80 80 7 7 4 4 4 30-150 30-150 750-18k 750-18k 750-18k 3/2 3/2 3/2 4M 4M 4M T066 T066 T066 T066 TO 3 60 100

2TL1-10

Abstract: MIL-S-3950
Contextual Info: in yj ct: LJ 00 1 FREEPO RT. ILLINOIS. A DIVISION OF U S A HONEYWELL T C A T A L O G L IS T IN G MICRO SWITCH 2TL1-10 SERIES SWITCH-T066LE M IL IT A R Y STANDARD NUMBER CHART 1 F E D . M F G . C O D E 9 1B2# THIS DR AW IN G C O V E R S A P R O P R I E T A R Y ITEM AN D IS T H E P R O P E R T Y O F M ICRO SWITCH. A DIVISION O F

Contextual Info: PNP Silicon Power Transistors PIMP Silico n Power Transistors for audio am plifiers and sw itching applications Type Max ¡mum ratings Case NKT4054 N KT4Ö 55 PN 4054 b v C E O iC> b v C B O V (A V T066 55 T03 ' (¡0 E la stic T 0 6 6 50 ^ T case = 2 5 °C

MS27753

Abstract: MS27754-35 EN-12449 12TW1-56 L117 TL-10632 090APPROX
Contextual Info: C A T A L O G L IS T IN G MICRO SWITCH FREEPORT ILLINOIS A DI VISI ON OF U S A SWITCH - T066LE HONEYWELL 12TW1-56 CHART 1 FED. M FC . C O D E • ! • * • CAT. LIST. .240 DIA 28° ± 4° co T H I S D R A W I N G C O V E R S A P R O P R I E T A R Y ITEM A N D IS T H E P R O P E R T Y O F M I C R O S W I T C H . A D I V I S I O N O F M I N N E A P O L I S *

NTE37

Abstract: NTE43 NTE50 NTE175 NTE36 NTE42 NTE45 T0126 T066 NTE55
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBo BVCeo BVEbo »FE Pd «T 12 160 140 6 100 100 15 2 400 350 6 50 35 20 7a 0.5 300 300 3 92 20 SIP-5 8a 0.05 100 100 5 400 Min 0.2/Unit 0.4 Total 100

transistor C635

Contextual Info: POWER INTEGRATED CIRCUIT PIC625 PIC626 PIC627 PIC635 PIC636 PIC637 Switching Regulator 15 Amp Positive and Negative Power Output Stages FEATURES • Designed and characterized for switching regulator applications • Cost saving design reduces size, improves efficiency, reduces noise and RFI See note 4.

NTE130

Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)

oms 450

Abstract: PT2622 2N1841 BLY81 2SC115 BLY74 M06G A515 B3570 B3571
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. H H TYPE No. I I M IN . ID E R A T E J to C M AX Pc

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N5036

Abstract: TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2n1841

Abstract: 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

PNP transistor A705

Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SD2350

Abstract: usaf521es071m BD112 BD116 BD251 2SD234Y 2N5017 description BD145 T062 MHT5906
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

D1666

Abstract: 2N1261A R3841 BC149 GERMANIUM PNP LOW POWER TRANSISTORS 2sb122 KM7001 40518 434M KL8503
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2sa648 transistor

Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N4250

Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260
Contextual Info: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248