NTE45 Search Results

NTE4541B

Abstract: NTE4538B NTE4522B NTE4532B NTE4529B NTE4536B NTE4543B NTE4521B NTE4528B NTE4526B
Contextual Info: INTEGRATED CIRCUITS - CMOS COMPLEMENTARY METAL OXIDE SILICON NTE4521B 16-Lead DIP, See Diag. 249 24-Stage Frequency Divider 16-Lead DIP, See Diag. 249 NTE4522B (BCD) NTE4526B (Binary) Programmable Divide-by- “N” 4 -B it Counter Q3 Q Q V dd 2 Q21 g Q20

Contextual Info: NTE452 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)6.0

NTE451

Contextual Info: NTE451 Silicon N–Channel JFET Transistor VHF/UHF Amplifier Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

NTE456

Abstract: TO72 package
Contextual Info: NTE456 N–Channel Silicon JFET General Purpose Amp, Switch Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed for general purpose amplifier and switching applications. Absolute Maximum Ratings:

NTE459

Contextual Info: NTE459 N–Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch Absolute Maximum Ratings: TA = +25°C unless otherwise specified Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

TO72 package n-channel jfet

Abstract: TRANISTOR JFET TO72 package NTE452
Contextual Info: NTE452 Silicon N–Channel JFET Transistor VHF Amplifier, Mixer Description: The NTE452 is a silicon, N–channel junction field effect tranistor JFET in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers. Absolute Maximum Ratings:

NTE458

Abstract: JFET
Contextual Info: NTE458 N–Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier Features: D Very Low Noise D Low Gate Current Absolute Maximum Ratings: TA = +25°C unless otherwise specified Gate–Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V

NTE44

Abstract: NTE45
Contextual Info: NTE44 NPN & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Contextual Info: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max

NTE4566B

Abstract: NTE4553B
Contextual Info: INTEGRATED CIRCUITS - CMOS COMPLEMENTARY METAL OXIDE SILICON NTE4547B 16-Lead DIP, See Diag. 249 High Current BCD-to-7-Segm ent Decoder/Driver Br i c Q N.C. § 9 s i n N.C. Q DP A3 V s s | ^ NTE4551B 16-Lead DIP, See Diag. 249 Quad 2-Input Analog Multiplexer/Demultiplexer

NTE454

Abstract: 200MHZ VG15
Contextual Info: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max

NTE455

Abstract: nte455 MOSFET G2DG1 nte455 data sheet dual-gate
Contextual Info: NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Transistor MOSFET Description: The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners.

NTE457

Abstract: J-FET TRANSISTOR jfet transistor
Contextual Info: NTE457 Silicon N–Channel JFET Transistor General Purpose Amp, Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

NTE4511B

Abstract: Q32B NTE4501 NTE4518B NTE4520B NTE4508B NTE4510B NTE4512B NTE4514B NTE4516B
Contextual Info: INTEGRATED CIRCUITS - CMOS COMPLEMENTARY METAL OXIDE SILICON NTE4501 16 -L e a d DI P, See D iag. 249 Dual 4 -In p u t N AND Gate, 2 -In p u t NOR/OR Gate, 8 -In p u t AN D/NAN D Gate NTE4502B 1 6-L e a d DIP, See Dlag. 249 Strobed Hex Inverter/Buffer N TE4503B

NTE44

Abstract: NTE45
Contextual Info: NTE44 NPN & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Contextual Info: INTEGRATED CIRCUITS - CMOS COMPLEMENTARY METAL OXIDE SILICON NTE4501 1 6 -L e a d DIP, See Diag. 249 Dual 4 -In p u t N AND Gate, 2 -In p u t NOR/OR Gate, 8 -In p u t A N D/NAN D Gate NTE4502B 16 -L e a d DIP, See Dlag. 249 Strobed Hex Inverter/Buffer N TE4503B

NTE4543B

Contextual Info: INTEGRATED CIRCUITS - CMOS COMPLEMENTARY METAL OXIDE SILICON NTE4521B 16-Lead DIP, See Diag. 249 24-Stage Frequency Divider g NTE4522B (BCD) 16-Lead DIP, See Diag. 249 NTE4526B (Binary) Programmable D ivide-by-'N ” 4-B it Counter Q3 V dd Q23 Q PE Q B Q21

NTE37

Abstract: NTE43 NTE50 NTE175 NTE36 NTE42 NTE45 T0126 T066 NTE55
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBo BVCeo BVEbo »FE Pd «T 12 160 140 6 100 100 15 2 400 350 6 50 35 20 7a 0.5 300 300 3 92 20 SIP-5 8a 0.05 100 100 5 400 Min 0.2/Unit 0.4 Total 100

NTE36

Abstract: NTE45 nte33 NTE34 nte157
Contextual Info: N T E ELECTRONICS INC SEE D • bMaiSSI 0002513 bOb « N T E T - Z ^ O f Maximum Breakdown! Voltage NTE TVP» Number Polarity and Material Description and Application Casa Style Diag. No. Maximum Collector Power Dissipation Watts Maximum Collector Current

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

NTE4017B

Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

NTE74HC4067

Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Contextual Info: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B

This AGC application requires one LM324

Abstract: "Microphone Preamplifier" agc NTE458 "Microphone Preamplifier" 1.5V ISD4000 trimpot 47k electret condenser microphone preamplifier 470K trimpot Condenser Microphone Amp block diagram OF CONDENSER MICROPHONE
Contextual Info: A Winbond Company Applications Note 4A AGC Circuit for ISD4000 Series Devices INTRODUCTION AGC CIRCUIT BLOCK The ISD4000 series is intended to operate with systems that already include an input amplifier and a speaker driver. However, an ‘off-the-shelf ‘ 3 V

philips ecg master replacement guide

Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete