NTE37
Abstract: NTE43 NTE50 NTE175 NTE36 NTE42 NTE45 T0126 T066 NTE55
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBo BVCeo BVEbo »FE Pd «T 12 160 140 6 100 100 15 2 400 350 6 50 35 20 7a 0.5 300 300 3 92 20 SIP-5 8a 0.05 100 100 5 400 Min 0.2/Unit 0.4 Total 100
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nte3659alt37mcpnte37+10nte175t0126tchmodente55t0220nte43nte50nte42nte45t0126t066
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NTE36
Abstract: NTE45 nte33 NTE34 nte157
Contextual Info: N T E ELECTRONICS INC SEE D • bMaiSSI 0002513 bOb « N T E T - Z ^ O f Maximum Breakdown! Voltage NTE TVP» Number Polarity and Material Description and Application Casa Style Diag. No. Maximum Collector Power Dissipation Watts Maximum Collector Current
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nte31nte34tb-34nte50+6nte49t0202nte36nte45nte33nte157
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NTE34
Abstract: 2039P nte33 nte50 nte157
Contextual Info: Maximum Breakdown Voltage Maximum Collector Power Dissipation Watts Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) lc BVcbo BV c e o BVebO l>FE Pd *T 1 160 160 6 100 Min 0.9 15 Min 4 15 160
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nte31nte34nte33nte37+5nte36t02022039pnte50nte157
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NTE12
Abstract: NTE18 nte30 NPN pnp MATCHED PAIRS NTE11 NTE16 NTE17 NTE19 NTE20 NTE21
Contextual Info: BI-POL AR TRANSISTORS Maximum Breakdown Voltage » Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) lc BVcbo B V ceo BVEbo h FE Pd »T T092
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nte12nte11nte30nte29+11nte32nte31nte3759altnte18npn pnp matched pairsnte16nte17nte19nte20nte21
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NTE 956
Abstract: 54IH NTE312 NC3A
Contextual Info: POWER MOS FIELD EFFECT TRANSISTORS Description and Application 2392 N -C H A N N EL Enhancement Mode High Speed Switch N -C H A N N EL Enhancement Mode High Speed Switch N -C H A N N EL Enhancement Mode High Speed Switch N -C H A N N EL Enhancement Mode High
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t0247nte 95654ihnte312+1nc3a
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