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NTE33 Datasheets (27)

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NTE Electronics

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NTE330	NTE Electronics	Germanium PNP Transistor High Power Switch	Original	PDF	21.4KB	2
NTE330	NTE Electronics	Bipolar Transistors	Scan	PDF	120.13KB	1
NTE3300	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	19.29KB	2
NTE3301	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	19.29KB	2
NTE3302	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	19.02KB	2
NTE3303	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	19KB	2
NTE331	NTE Electronics	Silicon Complementary Transistors Audio Power Amp, Switch	Original	PDF	21.22KB	2
NTE331	NTE Electronics	Bipolar Transistors	Scan	PDF	120.13KB	1
NTE331	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Audio Power Amp Switch, Pkg Style TO220	Scan	PDF	34.06KB	1
NTE3310	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	18.53KB	2
NTE3311	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	18.51KB	2
NTE3312	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	18.51KB	2
NTE331MP	NTE Electronics	Bipolar Transistors	Scan	PDF	120.13KB	1
NTE332	NTE Electronics	Silicon Complementary Transistor Audio Power Amp, Switch	Original	PDF	21.23KB	2

NTE332	NTE Electronics	Bipolar Transistors	Scan	PDF	120.13KB	1
NTE332	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp Switch, Pkg Style TO220	Scan	PDF	34.06KB	1
NTE3320	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	20.56KB	2
NTE3321	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	20.66KB	2
NTE3322	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	20.66KB	2
NTE3323	NTE Electronics	Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch	Original	PDF	20.53KB	2

NTE33 Price and Stock

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NTE Electronics Inc


NTE Electronics Inc NTE3311 Trans IGBT Chip N-CH 600V 25A 150W 3-Pin(3+Tab) TO-3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NTE3311		22		10	1 - 10 $9.79 100 $9.79 1000 $9.79 10000 $9.79	Buy Now
Arrow Electronics	NTE3311		22		10	1 - 10 $9.79 100 $9.79 1000 $9.79 10000 $9.79	Buy Now
NTE Electronics Inc NTE338 Transistor NPN Silicon 48V IC=3.5A Po=20W 27-50mhz RF Power AMP/driver
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE338		14			1 $61.15 10 $48.61 100 $42.50 1000 $41.34 10000 $41.34	Buy Now
Bristol Electronics	NTE338		1		1	1 $30.00 10 $30.00 100 $30.00 1000 $30.00 10000 $30.00	Buy Now
NTE Electronics Inc NTE3300 Igbt N-channel Enhancement 400V IC=10A TO-220 Full Pack Case
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE3300		10			1 - 10 $8.98 100 $6.85 1000 $6.10 10000 $5.77	Buy Now
TME	NTE3300		14		1	1 $8.24 10 $6.54 100 $6.54 1000 $6.54 10000 $6.54	Buy Now
NTE Electronics Inc NTE339 Transistor NPN Silicon 48V IC=7A Po=40W 27-50mhz RF Power AMP Output Stage
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE339		8			1 $57.06 10 $45.37 100 $39.68 1000 $38.59 10000 $38.59	Buy Now
Bristol Electronics ()	NTE339		1		1	1 $31.20 10 $31.20 100 $31.20 1000 $31.20 10000 $31.20	Buy Now
	NTE339		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NTE Electronics Inc NTE338F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE338F		3			1 $146.31 10 $47.85 100 $33.88 1000 $33.88 10000 $33.88	Buy Now
Bristol Electronics	NTE338F		1		1	1 $32.40 10 $32.40 100 $32.40 1000 $32.40 10000 $32.40	Buy Now

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NTE33 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE338F Contextual Info: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP	Original	nte338f 30mhz -30db 001mhz	PDF
NTE3303 Contextual Info: NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3303	PDF
PO 168 Abstract: 8-32-NC-3A Transistor 168 NTE338 8-32NC-3A Contextual Info: NTE338 Silicon NPN Transistor RF Power Amp Driver PO = 20W Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V	Original	nte338 8-32-nc-3a po 168 transistor 168 +18-32nc-3a	PDF
NTE3321 Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3321	PDF
NTE3323 Contextual Info: NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3323	PDF
pnp germanium to36 Abstract: NTE330 Germanium power Contextual Info: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.	Original	nte330 pnp germanium to36 germanium power	PDF
high speed diode 15A Abstract: NTE3303 Contextual Info: NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3303 high speed diode 15a	PDF
10a 400v bipolar transistor Abstract: NTE3300 nte33 Contextual Info: NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3300 10a 400v bipolar transistor nte33	PDF
074c Abstract: NTE3322 Contextual Info: NTE3322 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch TO3PBL Features: D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3322 -20a/s 074c	PDF
NTE3321 Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3321	PDF
Contextual Info: NTE3303 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3303	PDF
Contextual Info: NTE3312 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3312	PDF
NTE3322 Contextual Info: NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3322	PDF
8-32NC-3A Abstract: NTE337 8-32-NC-3A 8w RF POWER TRANSISTOR NPN Contextual Info: NTE337 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large– signal amplifier driver and pre–driver stages. This device is intended for use in industrial communications equipment operating at frequencies to 80MHz.	Original	nte337 80mhz 50mhz 36erwise +4800mw 8-32nc-3a 8-32-nc-3a 8w rf power transistor npn	PDF

NTE3320 Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3320	PDF
NTE3312 Abstract: NTE331 Contextual Info: NTE3312 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3312 nte331	PDF
NTE3311 Abstract: NTE331 Contextual Info: NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3311 nte331	PDF
NTE338F Abstract: 20W power transistor Contextual Info: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP	Original	nte338f 30mhz 001mhz 20w power transistor	PDF
NTE3320 Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3320	PDF
NTE335 Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent Contextual Info: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:	Original	nte335 nte336 30mhz 1817pf +5777pf j341 npn 250w n-p-n r.f. power transistors j201 equivalent	PDF
Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3320	PDF
NTE3302 Contextual Info: NTE3302 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3302	PDF
NTE3312 Abstract: nte33 Contextual Info: NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified	Original	nte3312 nte33	PDF
NTE331 Abstract: NTE332 Contextual Info: NTE331 NPN & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications.	Original	nte331 nte332	PDF

NTE33 Search Results

NTE33 Datasheets (27)

NTE33 Price and Stock

NTE Electronics Inc NTE3311

NTE Electronics Inc NTE338

NTE Electronics Inc NTE3300

NTE Electronics Inc NTE339

NTE Electronics Inc NTE338F

NTE33 Datasheets Context Search

NTE338F

NTE3303

PO 168

NTE3321

NTE3323

pnp germanium to36

high speed diode 15A

10a 400v bipolar transistor

074c

NTE3321

NTE3322

8-32NC-3A

NTE3320

NTE3312

NTE3311

NTE338F

NTE3320

NTE335

NTE3302

NTE3312

NTE331