NTE332 Search Results
NTE332 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NTE332 | NTE Electronics | Silicon Complementary Transistor Audio Power Amp, Switch | Original | 21.23KB | 2 | ||
| NTE332 | NTE Electronics | Bipolar Transistors | Scan | 120.13KB | 1 | ||
| NTE332 | NTE Electronics | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp Switch, Pkg Style TO220 | Scan | 34.06KB | 1 | ||
| NTE3320 | NTE Electronics | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original | 20.56KB | 2 | ||
| NTE3321 | NTE Electronics | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original | 20.66KB | 2 | ||
| NTE3322 | NTE Electronics | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original | 20.66KB | 2 | ||
| NTE3323 | NTE Electronics | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original | 20.53KB | 2 | ||
| NTE332MCP | NTE Electronics | Bipolar Transistors | Scan | 120.13KB | 1 |
NTE332 Price and Stock
NTE Electronics Inc NTE3322Igbt N-channel Enhancement 900V IC=60A TO-3P Case High Speed Switch |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTE3322 | 1 |
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NTE Electronics Inc NTE332Trans GP BJT PNP 100V 15A 90000mW 3-Pin(3+Tab) TO-220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTE332 | 3 |
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| NTE332 | 2 | 1 |
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NTE332 | 2 |
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| NTE332 | 1 |
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| NTE332 | 1 |
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NTE Electronics Inc NTE3323INSULATED GATE BIPOLAR TRANSISTOR, 25A I(C), 1200V V(BR)CES, N-CHANNEL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTE3323 | 1 |
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NTE332 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NTE3321Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
nte3321 | |
NTE3323Contextual Info: NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
nte3323 | |
074c
Abstract: NTE3322
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Original |
nte3322-20a/s074c | |
NTE3321Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
nte3321 | |
NTE3322Contextual Info: NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
nte3322 | |
NTE3320Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
nte3320 | |
NTE3320Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
nte3320 | |
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Contextual Info: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
nte3320 | |
NTE331
Abstract: NTE332
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Original |
nte331nte332 | |
NTE332
Abstract: NTE3323
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Original |
nte3323nte332 | |
NTE3322Contextual Info: NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
nte3322 | |
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Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
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nte3321 | |
HIGH VOLTAGE DIODE for microwave ovens
Abstract: NTE109 NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344
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Original |
nte834nte922mnte943mnte109+11 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
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Original |
100-upstk442-130m56730asppac011a+7 | |
123AP
Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
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Original |
123apnte159nte396nte375+8 | |
NTE135A
Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
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Original |
nte109nte116nte123apnte125+11 | |
332MCP
Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
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OCR Scan |
297mpnte297t0202nte307+8 | |