NTE50 Search Results

NTE140A

Abstract: NTE147A NTE145A NTE139A NTE144A NTE5079A NTE146A NTE5087A NTE5068 NTE5084A
Contextual Info: NTE5061A thru NTE5105A Includes NTE134A thru NTE151A Zener Diode, 1 Watt ±5% Tolerance Features: D Zener Voltage 2.4V to 200V D Low Cost D Low Zener Impedance D Excellent Clamping D Easily Cleaned with Freon, Alcohol, Chlorothene, and Similar Solvents Maximum Ratings and Electrical Characteristics: (TC = +25°C, unless otherwise specified.

NTE5010A

Abstract: NTE5015A NTE5035A NTE5013A NTE5058A NTE5022A NTE5008A NTE5036A NTE5057A NTE5054A
Contextual Info: NTE5000A thru NTE5060A Zener Diode, 1/2 Watt ±5% Tolerance Features: D Zener Voltage 2.4 to 200V D DO35 Package Maximum Ratings: Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

npn general purpose high voltage amplifier

Abstract: NTE49 NTE50
Contextual Info: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.

Contextual Info: NTE508,NTE509,NTE510,NTE514 High Voltage Silicon Rectifiers for Vacuum Tube Replacement Absolute Maximum Ratings: Peak Inverse Voltage, PRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45,000V

NTE504

Abstract: NTE505
Contextual Info: NTE504 and NTE505 High Voltage Selenium Rectifier for TV Applications Absolute Maximum Ratings: Breakdown Voltage tvj ≤ tvjmax, iR = 200µA, fo = 50Hz, tp(iR ≤ 2.5ms, t ≤ 5s), VBR NTE504 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≥31kV

Contextual Info: NTE5057A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage170 @I(Z) (A) (Test Condition) Tolerance (%)5.0 P(D) Max. (W)0.5 Z(z) Max. (ê) Dyn. Imped. Temp Coef pp/10k Maximum Operating Temp (øC) Package StyleDO-7

3CV3

Abstract: NTE508 2CN3 NTE510 3B2 diode 3dc3 tube "vacuum tube" 3DB3 vacuum tube data sheet NTE509
Contextual Info: NTE508,NTE509,NTE510,NTE514 High Voltage Silicon Rectifiers for Vacuum Tube Replacement Absolute Maximum Ratings: Peak Inverse Voltage, PRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45,000V

npn general purpose high voltage amplifier

Abstract: NTE49 NTE50
Contextual Info: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.

NTE49

Abstract: NTE50
Contextual Info: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.

NTE147A

Abstract: NTE144A NTE5081A NTE139A NTE5089A NTE143A NTE5074A NTE140A NTE5070A NTE142A
Contextual Info: NTE5061A thru NTE5105A Includes NTE134A thru NTE151A Zener Diode, 1 Watt ±5% Tolerance Features: D Zener Voltage 110V to 200V D Low Cost D Low Zener Impedance D Excellent Clamping D Easily Cleaned with Freon, Alcohol, Chlorothene, and Similar Solvents Maximum Ratings and Electrical Characteristics: (TC = +25°C, unless otherwise specified. Single phase,

NTE507

Contextual Info: NTE507 Silicon Rectifier Diode Description: The NTE507 is a silicon rectifier diode designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. This device has a typical recovery time of 150 nanoseconds providing high efficiency at frequencies

ZENER DIODE 5.1V

Abstract: zener diode 30c diode zener 30c NTE5021T1 5010T1 5v ZENER DIODE diode zener 5.1V IZK 12v zener diode Zener 5.1V diode zener 30.c
Contextual Info: NTE5010T1 thru NTE5021T1 Zener Diode, 500mW ±1% Tolerance Features: D Zener Voltage 5.1V to 12V D Constructed with an Oxide Passivated All Diffused Die D DO35 Type Axial Lead Package Absolute Maximum Ratings: Forward Voltage IF = 100mA, TL = +30°C, Lead Length = 3/8” , VF . . . . . . . . . . . . . . . . . . . . . . 1.5V

5027SM

Abstract: diode zener 3v ZENER Vr 3V 5015SM 5010SM 5013SM 5011SM 5014SM 5008SM 5005SM
Contextual Info: NTE5005SM thru NTE5031SM Zener Diode, 300mW ±5% Tolerance Features: D Zener Voltage 3.3V to 24V D SOT–23 Type Surface Mount Package Absolute Maximum Ratings: Maximim Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA

NTE506

Contextual Info: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode in an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single

Contextual Info: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode is an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single

NTE37

Abstract: NTE43 NTE50 NTE175 NTE36 NTE42 NTE45 T0126 T066 NTE55
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBo BVCeo BVEbo »FE Pd «T 12 160 140 6 100 100 15 2 400 350 6 50 35 20 7a 0.5 300 300 3 92 20 SIP-5 8a 0.05 100 100 5 400 Min 0.2/Unit 0.4 Total 100

transistor crossreference

Abstract: NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232
Contextual Info: Black White Vector Monitor Transistor Cross-Reference Location Deflection "X" Deflection "Y" "Other" Part Wells-Gardner 19V2000 Cross Type Upgrade Location Part Electrohome G05-802 Cross Type Upgrade Q701 Q702 Q703 Q704 Q705 Q706 Q707 na TPS98 TPS98 TPS98

NTE36

Abstract: NTE45 nte33 NTE34 nte157
Contextual Info: N T E ELECTRONICS INC SEE D • bMaiSSI 0002513 bOb « N T E T - Z ^ O f Maximum Breakdown! Voltage NTE TVP» Number Polarity and Material Description and Application Casa Style Diag. No. Maximum Collector Power Dissipation Watts Maximum Collector Current

HIGH VOLTAGE DIODE for microwave ovens

Abstract: NTE109 NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344
Contextual Info: 1994-2012.qxp:QuarkCatalogTempNew 9/11/12 8:55 AM Page 1994 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Comparators, Amplifiers, Diodes, Transient Voltage Suppressors TVS and IGBTs Allied Represents the Full Line of NTE Products, Most Available for Next Day Delivery. Contact Allied Sales at 1-800-433-5700 or Visit Us at www.Alliedelec.com.

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

NTE4017B

Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

NTE74HC4067

Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Contextual Info: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B

NTE5837

Abstract: nte5848 NTE5834 NTE584 NTE5847 NTE5838 NTE5849 NTE5830 NTE5831 NTE5832
Contextual Info: NTE5830 thru NTE5849 Stud Mount Standard Recovery Silicon Rectifiers, 3 Amp, DO4 Description: The NTE5830 through NTE5849 are silicon rectifiers in a DO4 type package designed for use in power supplies and other applications having need of a device with the following features:

NTE34

Abstract: 2039P nte33 nte50 nte157
Contextual Info: Maximum Breakdown Voltage Maximum Collector Power Dissipation Watts Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) lc BVcbo BV c e o BVebO l>FE Pd *T 1 160 160 6 100 Min 0.9 15 Min 4 15 160