2SB122 Search Results

2SB1225

Abstract: 2SD1827
Contextual Info: Inchange Semiconductor Product Specification 2SB1225 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1827 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS

2SB1226

Abstract: 2SD1828
Contextual Info: Inchange Semiconductor Product Specification 2SB1226 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1828 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・Motor drivers,printer hammer drivers,relay

2SB1225

Abstract: 2SD1827
Contextual Info: SavantIC Semiconductor Product Specification 2SB1225 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1827 ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS

2SD1830

Abstract: 2sd1830 equivalent 2SB1228
Contextual Info: SavantIC Semiconductor Product Specification 2SD1830 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1228 ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS

2SD1828

Abstract: 2SB1226
Contextual Info: SavantIC Semiconductor Product Specification 2SD1828 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1226 ·High DC current gain. ·Large current capacity and wide ASO. ·DARLINGTON APPLICATIONS ·Motor drivers,printer hammer drivers,relay

2SC3941

Abstract: 2SB1221
Contextual Info: Transistor 2SC3941 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SB1221 Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features ● High collector to emitter voltage VCEO. High transition frequency fT.

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

2SB1221

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1221 Silicon PNP epitaxial planar type For general amplification Unit: mm 5.0±0.2 4.0±0.2 8.0±0.2 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

transistor D1830

Abstract: 2SD830 d1830 transistor 2SD1830 2SD1830 2SB1228 NPN Transistor 5V DARLINGTON 2sd darlington
Contextual Info: [^Ordering num ber: EN 2214B 2SB1228/2SD1830 PNP/NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications A pplications • Suitable for use in control of motor drivers, printer ham m er drivers, relay drivers, and constantvoltage regulators.

EN2210

Abstract: D1826 2SB1224 2SD1826
Contextual Info: ["O rdering number: EN2210B SAW O N 0 .2 2 IO B 1 2SB1224/2SD1826 PNP/NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications A pplications • Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constantvoltage regulators.

2SB1220

Abstract: 2SD1821
Contextual Info: Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD1821 0.425 Unit: mm +0.1 0.3Ð0.0 5û 1 2 0.2±0.1 ● 3 2.1±0.1 ● High collector to emitter voltage VCEO. Low noise voltage NV.

2SB1220

Abstract: 2SD1821
Contextual Info: Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • High collector-emitter voltage (Base open) VCEO

EN2210

Abstract: 2SB1224 2SD1826
Contextual Info: 2SB1224 / 2SD1826 Ordering number : EN2210C SANYO Semiconductors DATA SHEET 2SB1224 / 2SD1826 PNP / NPN Epitaxial Planar Silicon Darlington Transistors Driver Applications Applications • Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1220G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821G • Package • High collector-emitter voltage (Base open) VCEO

Contextual Info: Product specification 2SB1220 Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -150 V Collector-emitter voltage VCEO -150

2SB1227

Abstract: 2SD1829
Contextual Info: JMnic Product Specification 2SB1227 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1829 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers,

2SB1225

Abstract: 2SD1827
Contextual Info: JMnic Product Specification 2SB1225 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1827 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers,

2SB1223

Abstract: 2SD1825
Contextual Info: Inchange Semiconductor Product Specification 2SB1223 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1825 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers,

2SB1220

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1220 Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -150 V Collector-emitter voltage

en220

Abstract: 2SB1223
Contextual Info: Ordering number:EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications Package Dimensions • Suitable for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. unit:mm

2sd1830 equivalent

Abstract: transistor 2SD1830 2SB1228 EN2214B
Contextual Info: Ordering number:EN2214B PNP/NPN Epitaxial Planar Silicon Darlington Transistor 2SB1228/2SD1830 Driver Applications Applications Package Dimensions • Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage

2SB1226

Abstract: 2SD1828
Contextual Info: SavantIC Semiconductor Product Specification 2SB1226 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1828 ·High DC current gain. ·Large current capacity and wide ASO. ·DARLINGTON APPLICATIONS ·Motor drivers,printer hammer drivers,relay

2SD1835

Contextual Info: Ordering number:ENN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications Package Dimensions • Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2003B [2SB1229/2SD1835] Features 5.0

2SB1013

Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018