2SC281 Search Results

693F TRANSISTOR

Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A
Contextual Info: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.

693F TRANSISTOR

Abstract: 693F transistor 693f 2SC2814 P3NF
Contextual Info: O rdering number : EN 693F _ 2SC2814 N0.693F NPN Epitaxial P lanar Silicon Transistor SANYO High-Frequency General-Purpose Amp Applications I Features . Very small package enabling compactness and slimness of sets. . High fx and small Cre* fT=320MHz typ, cre=0.95pF typ

2SC2816

Contextual Info: SavantIC Semiconductor Product Specification 2SC2816 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·High speed APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base

2SC2815

Contextual Info: SavantIC Semiconductor Product Specification 2SC2815 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits

2sc2810

Contextual Info: SavantIC Semiconductor Product Specification 2SC2810 Silicon NPN Power Transistors •Wit DESCRIPTION With TO-220C package ·High voltage,High speed APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC2816

Abstract: 400V5A DSA003644
Contextual Info: 2SC2816 Silicon NPN Triple Diffused ADE-208-887 Z 1st. Edition Sep. 2000 Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

Contextual Info: 2SC2816 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline TO -220AB 1 . Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item S ym bol R a tin g s Collector to base voltage

2SC3258

Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T

2SC2812

Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
Contextual Info: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,

Hitachi DSA002755

Abstract: 2sc2816
Contextual Info: 2SC2816 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage

2018a

Abstract: 2SC2812 2SA1179 X-2476 A1179
Contextual Info: S A W f O - 3 .- X - X ^ 0 9 0 0 ,6 9 1 0 ’87 88 7 - 9 ~f v 9 i «IJ-T- * f 2SA1179/2SC2812 7 y «Ä • { nNa32í8 6199 No.6901» t ^ P N P / N P N 1 1 ? 5» =* V 7 J ¡^ ¿ 5 ^ ? VO tzih*\i y h iO ^ Ç H .-ft.ïJlS .H k ^ ô riB îT '*« fit rn "C & £ o

2SC2819

Contextual Info: 2SC2819 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400ö V(BR)CBO (V)500 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sc2810

Abstract: sanken transistor
Contextual Info: SANKEN ELECTRIC CO LT» SSE D • 7 ^ 0 7 4 1 G O ü O ' m IDI H S A K J Silicon NPN Triple Diffused Planar - - o ☆High Voltage Switching Transistor 2SC2810 ^ i ' Application Example : eOutline Drawing 1 Switching Regulator and General Purpose * ••■•MT-25 T022Q

2sc2810

Abstract: 12V 3A Power IC
Contextual Info: JMnic Product Specification 2SC2810 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage,High speed APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter

Contextual Info: 2SC2816 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline TO -220AB f 1. Base 2. Collector Flange Emitter 3. Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage Symbol Ratings Unit

2SC4748

Abstract: 2SC5306 K20-K k08 transistor
Contextual Info: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136

2SA1179N6

Contextual Info: 2SA1179N/2SC2812N Ordering number : EN7198B SANYO Semiconductors DATA SHEET 2SA1179N/2SC2812N PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications Features • • Miniature package facilitates miniaturization in end products

Contextual Info: 2SC2816 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400ö V(BR)CBO (V)500 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

AM/Tuner

Abstract: 2SK937 2SC2812 FC21 2SK93-7
Contextual Info: FC21 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp. AM tuner RF Amp. Applications TENTATIVE Features •Composed of 2 chips, one being equivalent the 2SK937 and the other the 2SC2812 in the conventional CP package,

Contextual Info: 2SC2812-7 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)55 I(C) Max. (A)150m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)50m

Contextual Info: Ordering number : ENN693F NPN Epitaxial Planar Silicon Transistors 2SC2814 High-Friquency General-Purpose Amplifier Applications Features Package Dimensions • Ultrasmall package enabiling compactness and slimness of sets. · High fT and small cre fT=320MHz typ, cre=0.95pF

2sc2810

Contextual Info: Inchange Semiconductor Product Specification 2SC2810 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage,High speed APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: 2SC2816 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline T 0-2 2 0 A B 1. Base 2. Collector Flange 3. Em itter 2 3 Absolute Maximum Ratings ( T a = Item 2 5 °C ) Symbol Ratings Unit C ollector to base voltage

Contextual Info: 2SA1179 / 2SC2812 Ordering number : EN3218B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179 / 2SC2812 Low-Frequency General-Purpose Amplifier Applications Features • • Miniature package facilitates miniaturization in end products.