2018A Search Results

693F TRANSISTOR

Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A
Contextual Info: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.

2SC3773

Abstract: SANYO SS 1001
Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

2sc3807

Contextual Info: Órdering number: EN 2018A I No.*20IBA _ 2 S C 5 8 0 7 NPN Epitaxial Planar S i l i c o n Tr an si st or Iig h hFEi Frequency, G e n e r a l - 'urp os e Amp A p p l i c a t i o n s Low Applications . Low frequency general-purpose amplifiers, drivers

EN2516

Abstract: 2SB1935 2SB1295 2SB193
Contextual Info: Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers. unit:mm 2018A

Contextual Info: SANYO SEMI CONDUCTOR 2SA1342, 2SC3396 CORP 2EE D • TTTTOTb 0007324 T ■ r~ 3 i~ i3 ” P N P /N PN Epitaxial Planar Silicon Transistors 2018a Switching Applications with Bias Resistances R1=22kO, R2=22kO 1234C Applications • Switchïng circuit, ¡averter circuit, interface circuit, driver circuit.

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage

Contextual Info: SANYO S E M I C ON DU C T OR CORP E2E D 7 ‘n 7 0 7 b 2SA1510, 2SC3900 000733b S I T -3 7 - f3 " T - 3 5 -// P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistance R1=4.7ki2 2104A Applications . Switching circuits, inverter circuits, interface circuits, driver circuits

AN406/0591

Abstract: 2018a TEA2018A TEA2019 an086
Contextual Info: SGS-THOMSON iy TEA 2018A CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT > DIRECT DRIVE OF THE EXTERNAL SWITCHING TRANSISTOR ' POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5 A ' CURRENT LIMITATION ' TRANSFORMER DEMAGNETIZATION SENSING FULL OVERLOAD AND SHORT-CIRCUIT

2SC3661

Abstract: MARKING FY VEBO-15V N209 Low frequency general-purpose amplifiers,
Contextual Info: Ordering number:EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuit. unit:mm 2018A [2SC3661]

TMM2018AP-35

Abstract: AZ21 TMM2018AP TMM2018AP-25 TMM2018AP-45 128X16X8
Contextual Info: 2018AP-25, 2018AP-35, TM M 2018AM S idescription I T h e T M M 2 0 1 8 A P is a 16,384 b i t s h i g h s peed a n d l o w p o w e r s t a t i c r a n d o m a c c e s s m e m o r y o r g a n i z e d as 2 ,048 w o r d s b y 8 b i t s and o p e r a t e s f r o m a s i n g l e 5V supply.

LA1385

Abstract: tv vertical ic circuit Variable Resistors 503 LA2000 a37a
Contextual Info: LA1 385 monolithio linear IC CIRCUIT D R A W IN G r^o.BOSB VERTICAL DEFLECTION CIRCUIT OF B / W TV -2018A is used fo r monochromatic T V or small-sired color TV. The LA1385, which is an IC fo r vertical defection circuit enabling signal processing from vertical

358 IC

Abstract: transistor 359 AJ 2SC4453 S2E MARKING 2S12 transistor npn d 2058
Contextual Info: SANYO SEMICONDUCTOR CORP 2SC4453 52E D • 7 ^ 7 Q ? h 0007104 t ■ T-35-09 2018A N PN Epitaxial Planar Silicon Transistor High-Speed Switching Applications 2S12 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product

T3HS

Contextual Info: SANYO SEMICONDUCTOR 22E CORP im Q lh D OOOLTSl T-3HS 2SC3142 N PN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .

Contextual Info: 2018AP-25, 2018AP-35, TM M 2018AM S i d e s c r i p t i o n I T h e T M M 2 0 1 8 A P is a 16,384 b i t s h i g h s peed a n d l o w p o w e r s t a t i c r a n d o m a c c e s s m e m o r y o r g a n i z e d as 2 ,048 w o r d s b y 8 b i t s and o p e r a t e s f r o m a s i n g l e 5V supply.

cp 035 sanyo

Abstract: 2sa1196 2SC3859 la 1001 sanyo transistor npn d 2058 2SA1496 iso sanyo Sanyo marking S2106 TRANSISTORS SANYO
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7=^7071, 2SA1496, 2SC3859 000733D 4 • T -3 7 - / 3 3 5 - / [ P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistance R1=10k£2 VË21QÔA Applications . Switohing circuits, inverter circuits, interface circuits, driver citrcuits.

pa 2030a

Abstract: 2SA1682
Contextual Info: SANYO SEMICONDUCTOR S5E CORP D 7 cH 7 Q 7 t i O O 07 □ E ñ S 2SA1682 r - 5 /- /7 P N P Epitaxial P ia n a r S ilico n T ran sis to r 2018A TV Camera Deflection, High-Voltage Driver Applications 3011 F e a tu re s . H igh breakdow n voltage V q eo —300V

2018a

Abstract: 33Khz
Contextual Info: Telecommunication HDSL Transfor mer Transformers DT31-2014AS DT31-2015AS DT31-2017AS DT31-2018AS 1 DT31-20XXXX 9 N1 XXXX : DATE CODE WHITE DOT ON PIN1 DELTAXXXX PRI N3 4 2 8 SEC N4 N2 7 5 A 1 5 6 6 10 1 N1 B 0.3 0.4x0.7 TIN PLATED PHOSPHOR BRONZE D PRI 9

2SC4168

Abstract: 2SA1607 ns1110 en2479a
Contextual Info: Ordering number:EN2479A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. unit:mm 2018A [2SA1607/2SC4168]

2SA1252

Abstract: 2SC3134
Contextual Info: Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 F for AF Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base E : Emitter

SW2018A

Abstract: 2018a kdi sw- switch triangle KDI 2018AC kdi sw-2218
Contextual Info: DIODE SPST SWITCH WITH TTL DRIVER 0.25-18 GHz - MODEL SW-2018A 00 - - GENERAL INFORMATION: The KDI/Triangle Model SW 2018A-SPST diode switch operates over the full frequency range of 0.25-18 GHz in a single unit. Option logic input connectors including SM C, SMA, or solder terminals are provided. If not

DT31-2017AT

Abstract: DT31-2014AT DT31-2015AT DT31-2018AT DT31-20XXXX
Contextual Info: Telecommunication HDSL Transfor mer Transformers DT31-2014AT DT31-2015AT DT31-2017AT DT31-2018AT 1 DT31-20XXXX DELTAXXXX 9 N1 XXXX : DATE CODE WHITE DOT ON PIN1 PRI N3 4 2 8 SEC N4 N2 7 5 A 1 1 B 10 9 7 6 TINNED CP WIRE 8 9 7 N1 5 PRI D F 10 8 6 5 1 PRI

2SA1580

Abstract: 2SC4104
Contextual Info: Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions • High fT. · Small reverse transfer capacitance. · Adoption of FBET process. unit:mm 2018A [2SA1580/2SC4104]

Contextual Info: SANYO SEMICONDUCTOR 2SA1341, 2SC3395 CORP E2E I> • TTìTOTb 0007325 S ■ T-37-13 T - 3 S - U ♦ P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances R1=47kO, R2=47kiì 1233C Applications • Switching circuit, inverter circuit, interface circuit, driver circuit.

Contextual Info: j SANYO SEMICONDUCTOR CORP SEE D • TTiTOTt 0007335 fl 2SA1502, 2SC3863 r - 3 1 -1 3 ~r ~3£-n P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances R 1=2.2kO , R 2=10k0 2103A Applications , Switching circuits, inverter circuits,