2SC3396 Search Results

Contextual Info: SANYO SEMI CONDUCTOR 2SA1342, 2SC3396 CORP 2EE D • TTTTOTb 0007324 T ■ r~ 3 i~ i3 ” P N P /N PN Epitaxial Planar Silicon Transistors 2018a Switching Applications with Bias Resistances R1=22kO, R2=22kO 1234C Applications • Switchïng circuit, ¡averter circuit, interface circuit, driver circuit.

2SA1573

Abstract: 2sc3898 2SA1563
Contextual Info: s tu m R e si st ance-Containe d Transistor Seri e s RA or RC Type F e a t u r e s . ★ On-chip bias resistance ★ Small-sized package (MCP) ★ Both PNP and NPN types are available A p p l i c a t i o n s . ★ SW circuit. ★ Inverter circuit ★ Interface circuit ★ Driver circuit.

Contextual Info: Ordering number: EN 3080 F C 112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 22kft,R2 = 22k£2 • Composite type with 2 transistors contained in the CP package currently in use, improving the

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

rc105Q

Contextual Info: saU yo Resistance-Contained Transistor Seri e s RA or RC Type F e a tu re s. ★ On-chip bias r e sis ta n ce ★ Small-sized package (MCP) ★ Both PNP and NPN types are available A p p l i c a t i o n s . ★ SW c i r c u i t . ★ Inverte r c i r c u i t ★ I nter face c i r c u i t ★ Driver ci rc ui t.

Contextual Info: SANYO SEMICONDUCTOR FC112 CORP SEE D 7 eH 7 0 7 b 0 0 0 7 3 0 2 1 T -3 S -II # N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications 3080 with Bias Resistances R1=22kQ, R2=22kO F ea tu res On-chip bias resistors (Ri = 22kQ,R2= 22kfl)

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SB1223

Abstract: 2SB1224 2SB1225 2SB1226 2SB1227 2SD1825 2SD1826 2SD1827 2SD1828 2SD1829
Contextual Info: Continued from previous page A bsolut« m axim um ratings Device Package A pplications m » Vcbo VCEO Vebo V (V) <V> *_ *c m ! Electrical characteristics (Ta = 25 °C) le s o m ax @ V cb Æ Pe (W) tc s o max h re @ V ce • t e _ Vc b (V) h re fc*A)

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2SC3396

Abstract: D2000 FC112 ITR10414 ITR10415 ITR10416 ITR10417
Contextual Info: 注文コード No. N 3 0 8 0 FC112 No. N3080 D2000 FC112 特長 NPN エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用（バイアス抵抗内蔵） ・バイアス抵抗 R1=22kΩ, R2=22kΩ を内蔵。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

TRANSISTOR 2067

Contextual Info: SANYO S E MI CO ND UCTOR CÔRP SHE D 7‘ =H707b 0 00 737Ô T FC110 T-35-H # N PN Epitaxial Planar Silicon C om posite Transistor 2067 Switching Applications with Bias Resistances R 1=22kfl, R2=22kO 3078 F e a tu re s • On-chip bias resistors (Rj = 22k£l,R2= 22k£i)

2SA1343

Contextual Info: b3E D TTTTGTb O Q l S H n SA0YO ITSAJ 433 R e s i s t a n c e - C o n t a i n e d T r a n s i s t o r S e r i e s R A o r R C Type F e a t u r e s . ★ On-chip bias resistance ★ Small-sized package (MCP CP, SPA) A p p l i c a t i o n s . ★ SW circuit. ★ Inverter circuit ★ Interface circuit

2SC3396

Abstract: FC110
Contextual Info: Ordering number:EN3078 FC110 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions • On-chip bias resistors R1=22kΩ, R2=22kΩ · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

transistor cross reference

Abstract: RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA
Contextual Info: New Product Announcement July 2002 Announcing Full Line of 100mA Pre-biased Transistors in Surface Mount Packages Singles in SOT-523, SOT-323, SOT-23 & SC-59 Duals in SOT-363 & SOT-26 / SC-74 NPN PNP R1 R1 R2 R2 NPN Dual R 1 R2 R2 R 1 PNP Dual NPN/PNP Complementary Dual

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

rc114

Abstract: RA104Q 2SA1571 2SA1597 2SC3398
Contextual Info: SA\YO R e s i s t a n c e - C o n t a i n e d T r a n s i s t o r S e r i e s R A or R C Type F e a tu r e s ★ O n-chip b ia s A p p 1i c a t ★ ★ S m a ll- s iz e d package (MCP) In v e r t e r c i r c u i t Type No. Package C ★ ★ Both PNP and NPN types a re a v a ila b le

C3656

Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
Contextual Info: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)

Contextual Info: Ordering num ber:EN3 0 7 8 SANYO i FG 110 No.3078 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kfl • Composite type with 2 transistors contained in the CP package currently in use, improving the

2SC3396

Abstract: 2SA1342 A1342
Contextual Info: N o. 1 2 8 4 2 S A 1 3 4 2 / 2 S C 3 3 9 6 SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING APPLICATIONS WITH BIAS RESISTOR BUILT IN SANYO Applications Switching circuit, inverter, interface circuit, driver Features • Built-in bias resistor (Ri=22k£2, Ft2=22kf2).