2S12 Search Results
2S12 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| LP38842S-1.2/NOPB | Texas Instruments | 1.5A Ultra Low Dropout Linear Regulators 5-DDPAK/TO-263 -40 to 125 |
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2S12 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2S120 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 35.44KB | 1 | ||
| 2S121 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 110.76KB | 1 | ||
| 2S121 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 35.44KB | 1 | ||
| 2S122 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 35.44KB | 1 | ||
| 2S123 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 35.44KB | 1 | ||
| 2S124 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 35.44KB | 1 | ||
| 2S125 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 35.44KB | 1 | ||
| 2S126 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 35.44KB | 1 |
2S12 Price and Stock
ZETTLER Magnetics Inc BV302S12023Transformer: encapsulated; 2.3VA; 230VAC; 12V; 192mA; PCB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BV302S12023 | 1,602 | 1 |
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ZETTLER Magnetics Inc BV302S12015ZUTransformer: encapsulated; 1.5VA; 230VAC; 12V; 125mA; PCB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BV302S12015ZU | 883 | 1 |
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ZETTLER Magnetics Inc BV202S12003ATransformer: encapsulated; 0.35VA; 230VAC; 12V; PCB; 24x16x23mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BV202S12003A | 479 | 1 |
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Aimtec AM2S-1212SZConverter: DC/DC; 2W; Uin: 10.8÷13.2VDC; Uout: 12VDC; Iout: 160mA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AM2S-1212SZ | 46 | 1 |
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Bel Power Solutions PDM2-S12-S12-DConverter: DC/DC; 2W; Iout: 167mA; DIP; THT; 20.32x10.16x8.2mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PDM2-S12-S12-D | 5 |
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2S12 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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358 IC
Abstract: transistor 359 AJ 2SC4453 S2E MARKING 2S12 transistor npn d 2058
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2sc44532sc4453-applied358 ictransistor 359 aj+3 | |
remote control with 4 channels
Abstract: Green LED 3mm 553-XXXX-200 553-0211-200 3F34
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2s12b72553-xxxx-200remote control with 4 channelsgreen led 3mm+2 | |
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Contextual Info: 1 LM86, LM89, LM89-1, LM90, LM99, LM99-1 Evaluation Board User’s Guide Copyright 2003 National Semiconductor Corporation 1 2 Table of Contents 1.0 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3, 4 |
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lm89-1lm99-1 | |
1200ap
Abstract: PCM1701P Burr-Brown 3400B pcm65p pcm1701 4203SQ mp8316 DAC800-CBI-V MPC8S 4203j
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0025mk0100ap0100ms-10100ms-2+16 | |
2T306
Abstract: 2S113 2S114 2S115 2T305 2S119 2S116 2S120 2S121 2S122
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2t3062sd332sd342sd37+10 | |
N82S129N
Abstract: 256 x 4 TTL PROM Memory with 3-state outputs 82S126 82S129 N82S126 N82S129
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82s12682s129n82s129n256 x 4 ttl prom memory with 3-state outputs+2 | |
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Contextual Info: Philips Semiconductors s-parameter definitions 1 General SCATTERING PARAMETERS For the use of s-parameters for the specification of The scattering or s-parameters described in this document are in accordance with IE C 60747-7, Chapter II, Section 5. 1.1 In distinction to the conventional h-, y- and z-parameters, |
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g200028ain | |
LM2950
Abstract: LM2950 smd smd transistor wr BLKCON.100 LM95231EVAL 6 PIN SMD IC FOR USB Connector diode SMD CODE sm 17 PROGRAM TO INTERFACE SERIAL EEPROM AT24C02 to252ab LM95231
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lm95231lm2950lm2950 smdsmd transistor wr+6 | |
3a331
Abstract: 3N153 datasheet SC10 ntc 3J683 3V152 FUSE SMD tn MMC Electronics America 2G300 NTC 22K 0805 3N33
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10sec3a3313n153 datasheetsc10 ntc+7 | |
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Contextual Info: Glossary of Letters and Symbols *> General The following letters are used to indicate electrical properties VcER of transistors. V: Voltage I : Current P: Power f : Frequency w ith resistor inserted betw een the base and em itter. C: Capacitance N: Noise This is determined by V cbo and Rbe. |
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Contextual Info: Philips Components-Signetics Document No. 8 5 3 -0 1 4 8 ECN No. 8 6487 Date of Issue N ove m b e r 11, 1986 Status P ro du ct S pecifica tio n 8 2 S 1 2 6 8 2 S 1 2 9 1K-bit TTL bipolar PROM M em ory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S 12 6 and 82S 12 9 are field |
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82s12682s129270s1750i2+1 | |
D1N4003Contextual Info: LM85/LM96000 Evaluation Board User’s Guide Copyright 2004 National Semiconductor Corporation 1 www.national.com LM85/LM96000 Evaluation Board User’s Guide Revision A December 8, 2004 LM85/LM96000 Evaluation Board User’s Guide Table of Contents Table of Contents |
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lm85/lm96000d1n4003 | |
J289
Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
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sma11-sized2sk18392sk5362sk1840uj+11 | |
Hall TLE 4905Contextual Info: S IE M E N S S IL C -H A L L Siemens Low-Cost Hall ICs TLE 4905/35/35-2/45 L/LS Features Threshold Generator • Low Price • Temperature compensated magnetic performance • For unipolar and alternating fields • Large temperature range • Protection against |
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q67006-a9120q67006-a9148q67006-a9112q67006-a9121+7 | |
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usb-b connector corner
Abstract: LM2950 CY7C64613-52NC LM95010 LM95010EVAL MI1206K900R-00 national radio circuit diagram
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lm95010lm9501usb-b connector cornerlm2950+4 | |
3N153
Abstract: 2T151 3M683
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3h1033v6823n1534c103+8 | |
SC10 ntc
Abstract: 3a331 2G300 3J683 3g50 3k102 019k 3H103 3L104 TH20
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10secsc10 ntc3a3312g300+7 | |
SC10 ntc
Abstract: NTC 15 thermistor 1030 GA20 Application Form 3J683 Thermistor NTC 400k IT-I298 TH05 FH10-6E103 47k thermistor ntc c2570 transistor
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10k470k30150k1k10k2k150k+10 | |
transistor s11 s12 s21 s22
Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
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5091-8350e5968-1411etransistor s11 s12 s21 s22microwave power transistor impedance measurement+3 | |
2S12
Abstract: 2p22
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typical/1618-jul-082s122p22 | |
mosfet p321
Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
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an215a/dan215amosfet p321motorola an215a application+8 | |
RC05
Abstract: RESISTANCE RC05 RC-03 Piher International 7h2 rc02 rc03 rc20 EIA-96
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rs4811/16w1/10weia-96+9 | |
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Contextual Info: 2 ñ l2 b 7 S 0 00 4 70 5 35Q Dîalîght 5mm LED CBI' Circuit Board Indicator .250" LED Centerline _ 9.02 _ [.355] 550-XX08 P A R T NO . CO LO R LED DATA S H E E T INTEGRAL RESISTOR 550-0508 550-0608 550-0708 550-0808 [.3 7 0] Red, 5V Red, 12V Green, 5V Yellow, 5V |
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550-xx08 | |
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Contextual Info: Or, Call Customer S e m e a11-80D-54S-6132 USA Only Precision INSTRUMENTATION AMPLIFIER < z The INA120 is a precision instrumentation amplifier ideal for accurate signal acquisition. It combines pre cision, protected-input operational amplifiers, lasertrimmed gain-setting resistors, and a high common |
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e11-80d-54s-6132ina12017313bs00h51e7+1 | |