2SD33 Search Results

2sj514

Abstract: 2SD330 2SB514 2SD313 J514 10WAF
Contextual Info: ["O rdering num ber: EN397E _ 2SB514/2SD330 PNP/NPN Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amp _ Applications Features •Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313

d331 npn transistor

Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­

2SD330

Abstract: 2SB514 2SD313 EN397E sanyo D330 2SD 330
Contextual Info: Ordering num ber: EN397E 2SB514/2SD330 N 0.397E PNP/NPN Triple Diffused Planar Silicon Transistors SA\YO 50V/2A Low-Frequency Power Amp _ Applications Features • Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313

2SD330

Abstract: 2SB514 2SD313
Contextual Info: Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions • Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313.

2SB514

Abstract: 2SD330
Contextual Info: SavantIC Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD330 ·Low collector saturation voltage APPLICATIONS ·Suited for use in output stage of 10W AF power amplifier PINNING

NEC 824A

Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
Contextual Info: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330

2SD334

Abstract: IB080
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD334 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 80V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

2SB514 Datasheet

Abstract: 2SB514 2SD330 5v 10w amplifier ic
Contextual Info: Inchange Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD330 ・Low collector saturation voltage APPLICATIONS ・Suited for use in output stage of 10W AF power amplifier

d331

Abstract: 2Sd331 sanyo b514 B514 d331 tr sanyo D330 D331 PNP 2SB515D D331 NPN gat6
Contextual Info: SANYO SEMICONDUCTOR CORP 2SB514, 515 15E ]> I 2SD330, . 331 0003^00 1 j PNP/npn Triple D iffu sed P lan a r S ilic o n T ra n sisto rs ' 2oioa 7 ci ci ? D 7 b 2012 Low Frequency Power Amp Applications 3970 Especially suited for use in output stage of 10W AF Power amp.

D331 transistor

Abstract: d331 npn transistor D330 NPN transistor D331 PNP transistor D331 TRANSISTOR B514 D331 NPN d330 transistor D331 transistor D331 PNP
Contextual Info: SANYO SEMICONDUCTOR CORP " îâ Ë _ D- | _ 7 en 7 G 7 t 2SD330, 331 0004^05 r - 3 3 - 0 ? 201OA 2SB514, 515 N P N / pnp Triple Diffused Planar Silicon Transistors 2012 Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­

2sb526

Abstract: 2SB529 2SC789 2SA816 2SD331 2SB513A 2SB514 2SB515 2SB523 2SB566AK
Contextual Info: Power Transistors TYPE NO. IC mA VCE (V) VCE(sat) max (V) IC (A) fT min (MHz) COMPLE­ MENTARY TYPE # # ft ft ft 1 1 1 0.5 0.3 3 2 2 4 4 1 1 1 2 1 2 2 2 1.5 0.3 8+ 8+ - 2SD366A 2SD330 2SD331 - ft 4 4 5 2 4 1 1 1.5 1.4 10 1.5 1 3 2 2 - - # # # 0.5 1 0.5 0.5

Contextual Info: 2SD339-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)110 I(C) Max. (A)10 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SB514

Abstract: 2SD330
Contextual Info: SavantIC Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD330 ·Low collector saturation voltage APPLICATIONS ·Suited for use in output stage of 10W AF power amplifier PINNING

2SB324

Abstract: 2SD352 2SD334 100X2 2SB32 2SB324 N
Contextual Info: PANASONIC INDL/ELEKÍSEMI} 75C D | b c]32aS4 □00c]3Bñ B 2SD334 2SD334 '> ij zi y NPN NPN Diffused Junction Mesa Power Amplifier • 4# fS /F eatu res • • A SO AJj £ V '„ / W i d e a r e a o f s a fe o p e ra tio n (ASO) S 'B E E ® «0rfr]í9®£&

2SB514

Abstract: 2SD330
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB514 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD330

2SB514

Abstract: 2SD330
Contextual Info: JMnic Product Specification 2SB514 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD330 ・Low collector saturation voltage APPLICATIONS ・Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION

2sd331

Abstract: 2sc1061
Contextual Info: Power Transistors TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS P* VcEO Ic W (A) (V) Hre min max Ic (A) VCE (V) VcE(«ag max (V) Ic (A) fT COMPLE­ min MENTARY (MHz) TYPE . 2SD366 2SD366A 2SD330 2SD331 2SB513 2SB513A 2SB514 2SB515 2SB523 P P P P P TO-220 TO-220

SLA6023 application

Abstract: SLA*6022 2SB883 2SC231 2Sc2314 2Sc4211 2SC3985 2SD330 LB1823M LB1822
Contextual Info: Ordering number : EN4696B Monolithic Digital IC LB1823M Power Brushless Motor Predriver IC for OA Applications Overview Package Dimensions The LB1823M is a predriver IC developed for driving power brushless motors in office automation applications. A motor driver circuit with the desired output power

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sb405

Abstract: 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD11 25 15 300 150 85 2SD12 75 4 2.5A 60W(Tc=25ºC) 150 2SD13 35 4 10A 100W(Tc=25ºC) 150 2SD14 75 4 10A 100W(Tc=25ºC) 150 2SD15 60 6 6A 80W(Tc=25ºC) 150 2SD16 100

2SD304

Abstract: 2SD337 2SD309 2SD350 2SD341 2sd370 2SD311 2SD333 2sd316 2SD347
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD301 80 6 10A 50W(Tc=25ºC) 175 2500 4 5A 2SD302 2SD303 2SD304

2SB528

Abstract: 2SB540 2SB511 2Sd358 2SB525 2SB526 2SB527 2SB530 2SD287 2SB539
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SB502 -110 -8 -3A 2SB502A -110 -10 -3A 2SB503 -70 -8 -3A 2SB503A -80 -10 -3A 2SB504 2SB504A -80 -100 -10 -2A -10 -2A 2SB505 -80 -10 -2A 2SB506 -150 -7 -5A 2SB506A -150 -7 -5A

2sc897 hitachi

Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .