2SD78 Search Results

Contextual Info: Product specification 2SB736 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Complementary to 2SD780. 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD789 TRANSISTOR（ NPN ） ＴＯ－９２ＭＯＤ FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage

2SD789

Contextual Info: HITACHI 2SD789 SIU C O N MPN £PITAX*Ai. LOW FR EQ UENC Y POW ER AM PLIP’ ER Com pîem eniary pair * ìli 2SÖ740 I •3 ¡M ft K-ri- :*• Ti C . ' 7 Sx * i;~<t {[V.r.’.* • irr « í'iji r J Ë D E C TO-92 MOD. I A B S O L U T E MAXIMUM R A TIN G S O a~ jyT<

2SB739

Abstract: 2SB739CTZ-E 2SD787 2SD788 PRSS0003DC-A
Contextual Info: 2SB739 Silicon PNP Epitaxial REJ03G0650-0200 Previous ADE-208-1030 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD787 and 2SD788 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

2SD789ETZ-E

Abstract: 2SD789 2SD789DTZ-E 2SD789D 2SD789E 2SB740 2SD789CTZ-E PRSS0003DC-A
Contextual Info: 2SD789 Silicon NPN Epitaxial REJ03G0772-0300 Previous ADE-208-1140A Rev.3.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

MARKING D53 SOT23

Contextual Info: IC SMD Type Product specification 2SD780A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 1 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: 2SD788 Silicon NPN Epitaxial REJ03G0771-0200 Previous ADE-208-1139 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB738 and 2SB739 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

d54 marking

Abstract: MARKING D53 SOT23 marking D53 PT-200 2SD780A hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SD780A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 1 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

2SB739

Abstract: Hitachi DSA002754 2SB738
Contextual Info: 2SB738, 2SB739 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD787 and 2SD788 Outline 2SB738, 2SB739 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SB738 2SB739 Unit Collector to base voltage VCBO –20

EBO1

Abstract: Hitachi DSA002756 2SD788
Contextual Info: 2SD787, 2SD788 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB738 and 2SB739 Outline 2SD787, 2SD788 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SD787 2SD788 Unit Collector to base voltage VCBO 20 20

2SD788

Contextual Info: 2 2SD788 !! S Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm For stroboscope 5.0±0.2 4.0±0.2 C 5.1±0.2 B • Features 0.7±0.2 A • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

Contextual Info: 2SD781 Silicon NPN Epitaxial HITACHI Application Power switching TV horizontal deflection output Outline T O -2 2 0 A B 2 1 1. B a s e 2. C o lle c to r F la n g e 1 23 3. E m itte r 4 kQ 300 Q (Typ) (Typ) ¿ 3 Absolute Maximum Ratings (Ta = 25 °C) Item

2SC4748

Abstract: 2SC5306 K20-K k08 transistor
Contextual Info: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136

Contextual Info: HITACHI 2SB738, 2SB739 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD787 and 2SD788 ~n— T~m 1 Emitter 2 C o H e c io f B ase fîimçrvsiDris in m m (JEDEC TO-92 MOD.) • ABSOLUTE MAXIMUM RATINGS (Ta=25°C) llcm Symbol;

2SD1810

Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
Contextual Info: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5

2SB740

Abstract: Hitachi DSA002754
Contextual Info: 2SB740 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline 2SB740 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage

2SB737

Abstract: 2SD786
Contextual Info: ROHffl I N P N ' > ‘j 3 > b y > y Z * 2SD786 3 jjy-°.5o 1.27 »I T r ~ 1 .27 1 i$ " J * (2)3 (3 K -* " \ ^ ) I ( 2 ) i(3J/ m U M C # — b [J " j K 7 7> 7 Dt ^ f f i • (T a = 2 5 °C ) h 7 > -s Z $ T 'to il □ U 0 =1 X N F = 2 .5 d B T y p . (at f = 10Hz,

2SB740

Abstract: Hitachi DSA0076 2SD789
Contextual Info: 2SB740 Silicon PNP Epitaxial ADE-208-1032 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB740 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Contextual Info: 2SD787,2SD788 Silicon NPN Epitaxial HITACHI Application • Low frequency power amplifier • Complementary pair with 2SB 738 and 2SB 739 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 889 2SD787, 2SD788 Absolute Maximum Ratings Ta = 25°C Item Symbol

NEC D780

Abstract: 2SD78 d780 nec 2sd780 D780A 780a
Contextual Info: SILICON TRANSISTORS 2 S D 7 8 0 ,2 S D 7 8 0 A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTIO N P A C K A G E D IM EN SIO N S The 2SD780, 2S D 780 A are designed fo r use in small ty p e equipm ents espe- in m illim eters

transistor 5bw

Abstract: transistor 3bw 5bw transistor 2sb736r 3bw transistor 5BW 30 Bw5 transistor 1bw transistor transistor 1BW
Contextual Info: 2 S B 7 3 6 ,2 S B 7 3 6 R Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor Complimentary to 2SD780, 2SD780R P A C K A G E DIMENSIONS High DC current gain: h FE = 200 TYP. <VCE = -1 .0 V , l c = -5 0 m A in m illim eters {inches) 25T i 10 a

2SB738

Abstract: 2SB739 2SD788 2SD788CTZ-E 2SD788DTZ-E PRSS0003DC-A
Contextual Info: 2SD788 Silicon NPN Epitaxial REJ03G0771-0200 Previous ADE-208-1139 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB738 and 2SB739 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

2sd786

Contextual Info: 2SD786 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)300m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)