780A Search Results

A 7800A

Abstract: DSF20060SF DSF20060SF55 DSF20060SF56 DSF20060SF58 DSF20060SF60
Contextual Info: DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.4 DS4219-4.0 January 2000 KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs APPLICATIONS • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode

Contextual Info: DCR780G42 Phase Control Thyristor Preliminary Information DS5829-1.1 May 2005 LN23926 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 780A 10500A 1500V/µs 400A/us High Power Drives

Contextual Info: KSN-780A-119+ Frequency Synthesizer Typical Performance Data FREQ. POWER OUTPUT HARMONICS VCO CURRENT PLL CURRENT dBm (dBc) (mA) (mA) (MHz) 729.99 735.0 741.6 748.3 755.0 761.6 768.3 774.9 780.0 -45ºC +25ºC +85ºC -45ºC F2 +25ºC -0.03 0.00 0.04 0.06

Contextual Info: DCR780G42 Phase Control Thyristor DS5829-2 April 2012 LN29438 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 780A 10500A 1500V/µs 400A/us * Higher dV/dt selections available 

Contextual Info: DCR780G42 Phase Control Thyristor DS5829-2 April 2012 LN29438 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 780A 10500A 1500V/µs 400A/us * Higher dV/dt selections available 

Contextual Info: HB56S864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-780A Z Rev. 1.0 May. 9, 1997 Description The H B56S864ES belongs to 8 B yte DIM M (Dual In-line Memory M odule) fam ily, and has been developed as an optimized main memory solution for 4 and 8 B yte processor applications.

736a

Abstract: stt5 117 ajg JE 170 JE 33 t1is 2SB736 2SB736A T108 T540
Contextual Info: •3— S 7 • £/— h- NEC Silicon Transistors iïf/ x fx # 2 S B 7 3 6 ,7 3 6 A W i t # o h FE^ ' * v \ O2SD780, ! m m hFE : 2 0 0 T Y P . ( V CE = —1 .0 V, Ic = —50 mA) 2SD 780At 3 > r i J / ( T a = m 25 iJT i-o °C ) S Bg- § f§ 2SB736 2SB736A

2SC2804

Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Contextual Info: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787

DG808BC45

Abstract: DG808BC
Contextual Info: DG808BC45 Gate Turn-off Thyristor DS5914-2 July 2014 LN31731 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs

Contextual Info: DCR780G42 Phase Control Thyristor Preliminary Information DS5829-1.0 February 2005 LN23800 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 780A 10500A 1500V/µs 400A/us High Power Drives

RAV 13101

Abstract: ADF4118 744 770 910 1
Contextual Info: Frequency Synthesizer 50Ω KSN-780A-119+ 729.99 to 780 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK801 Product Overview The KSN-780A-119+ is a Frequency Synthesizer, designed to operate from 729.99 to 780

Hitachi DSA00166

Abstract: Nippon capacitors
Contextual Info: HB56S864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module ADE-203-780A Z Rev. 1.0 May. 9, 1997 Description The HB56S864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56S864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module ADE-203-780A Z Rev. 1.0 May. 9, 1997 Description The HB56S864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

DCR780G42

Abstract: dcr1080
Contextual Info: DCR780G42 Phase Control Thyristor DS5829-5 February 2014 LN31341 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 780A 10500A 1500V/µs 400A/us * Higher dV/dt selections available

823B

Abstract: DL201 motorola handbook 84 pin plcc ic base Reliability and quality handbook
Contextual Info: MOTOROLA SEMICONDUCTOR GENERAL INFORMATION Packaging & Case Information 84-Pin PLCC CASE 780A-01 ISSUE A FN SUFFIX 181-Pin PGA CASE 795A–02 ISSUE A HI SUFFIX 128-Pin QFP CASE 862A-02 ISSUE B DD SUFFIX 208-Pin QFP CASE 872A-01 ISSUE TBD DK SUFFIX 160-Pin QFP

Contextual Info: Frequency Synthesizer 50Ω KSN-780A-119+ 729.99 to 780 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK801 Product Overview The KSN-780A-119+ is a Frequency Synthesizer, designed to operate from 729.99 to 780

TGS 825

Abstract: gate turn-off Gate Turn-Off Thyristors A780A DG808BC DG808BC45 360Kn
Contextual Info: DG808BC45 Gate Turn-off Thyristor DS5914-1.1 January 2009 LN26575 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs

2SA748

Abstract: 2SA757B 2SB927 2sb861 2SB1043 2sa763 2SB596 2SB548 2SB1064 2SA715
Contextual Info: 13 - - sa € Type No. 2SA 752 te T s ïr H ÎL B ÎL b a 2SA 77 9 K ~ 2SA 780A m B NEC 2SB548 2SA1232 2SA985 2SA985 2SA10Î5 V - 9CAû‘in y-y'ry T $ 2SA659 •y-V ■y-virv ■y-virv V - V - te te B B T T Al i X s X s te T B 3ï » ± il FUJITSU fâ T

1000A 100V power diode

Contextual Info: DSF20060SF DSF20060SF Fast Recovery Diode Replaces January 2000 version, DS4218-4.0 DS4219-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode

DCR780G38

Abstract: DCR780G40 DCR780G42
Contextual Info: DCR780G42 Phase Control Thyristor Preliminary Information DS5829-1.2 August 2007 LN25545 KEY PARAMETERS FEATURES Double Side Cooling VDRM IT(AV) ITSM dV/dt* dI/dt High Surge Capability APPLICATIONS 4200V 780A 10500A 1500V/µs 400A/us * Higher dV/dt selections available

Contextual Info: DG808BC45 Gate Turn-off Thyristor DS5914-1.1 January 2009 LN26575 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs

X780

Contextual Info: JVKJÏXAJVK 19-0125; Rev. 0; 4/93 Dual-Slot PCMCIA Analog P o w er C ontroller The M A X 780A in c o rp o ra te s tw o 0 V /+ 5 V /+ 1 2 V /h ig h im p ed a n ce pow er outputs for flash Vpp program m ing, level shifters for pow er MOSFET control of two se p a ­

Nippon capacitors

Contextual Info: HB5ÓS864ES-Ó/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-780A Z Rev. 1.0 May. 9, 1997 Description The HB56S864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: SEPTEMBER 1996 DSF20060SF ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters. ■ Choppers. ■ Inverse Parallel Diode. ■ Freewheel Diode. FEATURES