2SC51 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5129 U nit in mm HORIZO NTAL DEFLECTION O U TPU T FOR HIGH RESOLUTION DISPLAY, COLOR TV. 1 5.5 ± 0.5 a 3.6 ±0.3 • • • • - 3 ^ - - .1- HIGH SPEED SW ITCHING APPLICATIONS. 3 0±0.3 H igh Speed : tf= 0.15/js Typ.

2SC5172

Contextual Info: 2SC5172 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS SW ITCH IN G REG U LATO R A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. U n it in nun 10*0.3 HIGH SPEED D C-DC CO N VERTER APPLICATIONS. • E xcellent Sw itching Times : tr = 0.7/js (M ax.), tf= 0 .5 //s (M ax.) a t I c = 3A

2SA1941

Abstract: 2SC5198
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 PO W ER AMPLIFIER APPLICATIONS. • • U n it in mm Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage

fe 5571

Abstract: KS 0302
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low N oise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 m A, f = 2 G H z • NF = 1.3 dB

nec 13772

Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p

2SA1909

Abstract: 2SC5101
Contextual Info: Inchange Semiconductor Product Specification 2SA1909 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5101 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

C5103

Abstract: transistor C5103 C5103 Transistor
Contextual Info: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)

2SC5100

Abstract: 2SA1908
Contextual Info: JMnic Product Specification 2SC5100 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1908 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol

2SA1909

Abstract: 2SC5101 027S
Contextual Info: JMnic Product Specification 2SA1909 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5101 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

Contextual Info: High-speed Switching Transistor -60V, -5A 2SA1952 Features 1) High speed switching. (tf : Typ. 0.15 s at IC = -3A) 2) Low VCE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. Dimensions (Unit : mm)

2SC519

Abstract: 2SA656
Contextual Info: AOK AOK Semiconductor P ro d u c t S p e c ific a tio n 2SA656 S ilicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC519 APPLICATIONS • For audio frequency and power amplifier applications

2SA1939

Abstract: 2SC5196
Contextual Info: 2SA1939 TO SHIBA 2 S A 1 939 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X . • • Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. 0 3 .2 ± 0 .2 %

Contextual Info: 2SA1932 SILICON P N P EPITAXIAL T Y P E Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S . D R IV E R ST A G E A M P L IF IE R A P P L IC A T IO N S. • • High Transition Frequency : f'j' = 70MHz Typ. Complementary to 2SC5174 « 7iT M A X I M U M R A T IN G S (Ta = 25°C

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC5175 U n it in mm H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . • • Low Saturation Voltage : V ç e s a t ~0.4V (MAX.) (at Ic = 2.5A, IB = 125mA) High Speed Switching Time : tstg = 0.8//s (Typ.) M A X I M U M R A T IN G S (Ta = 25°C)

C5122

Abstract: 2SC5122
Contextual Info: 2SC5122 東芝トランジスタ シリコンNPN三重拡散形 2SC5122 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • 飽和電圧が低い。 : VCE sat = 0.4 V (標準) (IC = 20 mA, IB = 0.5 mA) : VCEO = 400 V 絶対最大定格 (Ta = 25°C)

Toshiba transistor A1939

Abstract: a1939 2SA1939 2SC5196 40w amplifier
Contextual Info: 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristics

c5174

Abstract: 2SA1932 2SC5174
Contextual Info: 2SC5174 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5174 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1932 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2-21F1A

Abstract: 2SA1942 2SC5199
Contextual Info: 2SA1942 東芝トランジスタ シリコンPNP三重拡散形 2SA1942 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = −160 V 最小 • 2SC5199 とコンプリメンタリになります。 • 80 W ハイファイオーディオアンプ出力段に最適です。

C5174

Abstract: 2SC5174 2SA1932
Contextual Info: 2SC5174 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5174 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 100 MHz 標準 • 2SA1932 とコンプリメンタリになります。

CBC 548 B

Abstract: CBC 548 CBC 548 A 2SC5108FT
Contextual Info: 2SC5108FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5108FT CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE + RC + XTB + EG

A1932

Abstract: 2SA1932 2SC5174
Contextual Info: 2SA1932 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1932 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 70 MHz 標準 • 2SC5174 とコンプリメンタリになります。

2SC5173

Contextual Info: 2SC5173 東芝トランジスタ シリコンNPN三重拡散形 2SC5173 ○ 高耐圧一般増幅用 ○ カラーテレビ水平ドライブ用 ○ カラーテレビクロマ出力用 単位: mm • 高耐圧です。 • コレクタ出力容量が小さい。 : Cob = 3.0 pF 標準

LT 5232

Abstract: 2SC5106
Contextual Info: TOSHIBA 2SC5106 2 S C 5 1 06 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2SC5198

Abstract: 2SA1941 2SC5198 2sa1941 2SA1941 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SC5198 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage