2sj514
Abstract: 2SD330 2SB514 2SD313 J514 10WAF
Contextual Info: ["O rdering num ber: EN397E _ 2SB514/2SD330 PNP/NPN Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amp _ Applications Features •Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313
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en397e2sb514/2sd3302sb5142sd313+42sj5142sd330j51410waf
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d331 npn transistor
Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ
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2sd3302sb514q004t05dissipatiobh81+110dgb752d331 npn transistord331 transistorla 1201 sanyod331 pnpd330 npn transistortransistor d331d331d331 npntransistor b514d330 transistor
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2SD330
Abstract: 2SB514 2SD313 EN397E sanyo D330 2SD 330
Contextual Info: Ordering num ber: EN397E 2SB514/2SD330 N 0.397E PNP/NPN Triple Diffused Planar Silicon Transistors SA\YO 50V/2A Low-Frequency Power Amp _ Applications Features • Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313
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en397e2sb514/2sd3302sb5142sd313+42sd3307tn707bsanyo d3302sd 330
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2SD330
Abstract: 2SB514 2SD313
Contextual Info: Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions • Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313.
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2sb514/2sd3302sb5142sd3132010c+3o-220absc-462sd330
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2SB514
Abstract: 2SD330
Contextual Info: SavantIC Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD330 ·Low collector saturation voltage APPLICATIONS ·Suited for use in output stage of 10W AF power amplifier PINNING
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2SB514 Datasheet
Abstract: 2SB514 2SD330 5v 10w amplifier ic
Contextual Info: Inchange Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD330 ・Low collector saturation voltage APPLICATIONS ・Suited for use in output stage of 10W AF power amplifier
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2sb514o-220c2sd330o-220+22sb514 datasheet5v 10w amplifier ic
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d331
Abstract: 2Sd331 sanyo b514 B514 d331 tr sanyo D330 D331 PNP 2SB515D D331 NPN gat6
Contextual Info: SANYO SEMICONDUCTOR CORP 2SB514, 515 15E ]> I 2SD330, . 331 0003^00 1 j PNP/npn Triple D iffu sed P lan a r S ilic o n T ra n sisto rs ' 2oioa 7 ci ci ? D 7 b 2012 Low Frequency Power Amp Applications 3970 Especially suited for use in output stage of 10W AF Power amp.
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2sb5142sd330is-20mais-313+11is-313ad3312sd331sanyo b514b514d331 trsanyo d330d331 pnp2sb515dd331 npngat6
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D331 transistor
Abstract: d331 npn transistor D330 NPN transistor D331 PNP transistor D331 TRANSISTOR B514 D331 NPN d330 transistor D331 transistor D331 PNP
Contextual Info: SANYO SEMICONDUCTOR CORP " îâ Ë _ D- | _ 7 en 7 G 7 t 2SD330, 331 0004^05 r - 3 3 - 0 ? 201OA 2SB514, 515 N P N / pnp Triple Diffused Planar Silicon Transistors 2012 Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ
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2sd3302sb514r-33-0b1181+11b1252d331 transistord331 npn transistord330 npn transistord331 pnptransistor d331transistor b514d331 npnd330 transistord331transistor d331 pnp
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2SB514
Abstract: 2SD330
Contextual Info: SavantIC Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD330 ·Low collector saturation voltage APPLICATIONS ·Suited for use in output stage of 10W AF power amplifier PINNING
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2SD330
Abstract: 2SB514 2SD313
Contextual Info: Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions • Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313.
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2SB514
Abstract: 2SD330
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB514 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD330
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2SB514
Abstract: 2SD330
Contextual Info: JMnic Product Specification 2SB514 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD330 ・Low collector saturation voltage APPLICATIONS ・Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION
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2sd331
Abstract: 2sc1061
Contextual Info: Power Transistors TYPE POLA CASE NO. RITY MAXIMUM RATINGS P* VcEO Ic W (A) (V) Hre min max Ic (A) VCE (V) VcE(«ag max (V) Ic (A) fT COMPLE min MENTARY (MHz) TYPE . 2SD366 2SD366A 2SD330 2SD331 2SB513 2SB513A 2SB514 2SB515 2SB523 P P P P P TO-220 TO-220
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SB528
Abstract: 2SB540 2SB511 2Sd358 2SB525 2SB526 2SB527 2SB530 2SD287 2SB539
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SB502 -110 -8 -3A 2SB502A -110 -10 -3A 2SB503 -70 -8 -3A 2SB503A -80 -10 -3A 2SB504 2SB504A -80 -100 -10 -2A -10 -2A 2SB505 -80 -10 -2A 2SB506 -150 -7 -5A 2SB506A -150 -7 -5A
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2sb5022sb502a2sb5032sb503a+162sb5042sb504a2sb5052sb5062sb506a2sb5072sb5282sb5402sb5112sd3582sb5252sb5262sb5272sb5302sd2872sb539
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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"Tektronix 475"
Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
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48/buxbux48bux48aampere32+16tip73btip74tip74atip74btip75tip75atektronix 475equivalent 2n6488tip42c equivalentbu108motorola darlington power transistormotorola 266 to-204aa transistord45h11 equivalent replacementpnp buxtransistor replacement table for transistortip3055 equivalent
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D42C5
Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
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mje16204tip73btip74tip74a+15tip74btip75tip75atip75btip75cd42c5transistor bc 6472n5302 ebpin out transistor tip2955bs170 replacement2sc141bu108bc 658motorola transistors mje3055 to 127mc7812 to-220
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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mje521mje371tip73btip74+16tip74atip74btip75tip75atip75btip75cmje521 equivalentbu1082n3055 plastic2n6488 motorolamotorola transistors mje3055 to 1273904 transistorbdx54tip122 tip127 audio ampbu326bu100
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