2SD330 Search Results

2sj514

Abstract: 2SD330 2SB514 2SD313 J514 10WAF
Contextual Info: ["O rdering num ber: EN397E _ 2SB514/2SD330 PNP/NPN Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amp _ Applications Features •Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313

d331 npn transistor

Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­

2SD330

Abstract: 2SB514 2SD313 EN397E sanyo D330 2SD 330
Contextual Info: Ordering num ber: EN397E 2SB514/2SD330 N 0.397E PNP/NPN Triple Diffused Planar Silicon Transistors SA\YO 50V/2A Low-Frequency Power Amp _ Applications Features • Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313

2SD330

Abstract: 2SB514 2SD313
Contextual Info: Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions • Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313.

2SB514

Abstract: 2SD330
Contextual Info: SavantIC Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD330 ·Low collector saturation voltage APPLICATIONS ·Suited for use in output stage of 10W AF power amplifier PINNING

NEC 824A

Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
Contextual Info: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330

2SB514 Datasheet

Abstract: 2SB514 2SD330 5v 10w amplifier ic
Contextual Info: Inchange Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD330 ・Low collector saturation voltage APPLICATIONS ・Suited for use in output stage of 10W AF power amplifier

d331

Abstract: 2Sd331 sanyo b514 B514 d331 tr sanyo D330 D331 PNP 2SB515D D331 NPN gat6
Contextual Info: SANYO SEMICONDUCTOR CORP 2SB514, 515 15E ]> I 2SD330, . 331 0003^00 1 j PNP/npn Triple D iffu sed P lan a r S ilic o n T ra n sisto rs ' 2oioa 7 ci ci ? D 7 b 2012 Low Frequency Power Amp Applications 3970 Especially suited for use in output stage of 10W AF Power amp.

D331 transistor

Abstract: d331 npn transistor D330 NPN transistor D331 PNP transistor D331 TRANSISTOR B514 D331 NPN d330 transistor D331 transistor D331 PNP
Contextual Info: SANYO SEMICONDUCTOR CORP " îâ Ë _ D- | _ 7 en 7 G 7 t 2SD330, 331 0004^05 r - 3 3 - 0 ? 201OA 2SB514, 515 N P N / pnp Triple Diffused Planar Silicon Transistors 2012 Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­

2sb526

Abstract: 2SB529 2SC789 2SA816 2SD331 2SB513A 2SB514 2SB515 2SB523 2SB566AK
Contextual Info: Power Transistors TYPE NO. IC mA VCE (V) VCE(sat) max (V) IC (A) fT min (MHz) COMPLE­ MENTARY TYPE # # ft ft ft 1 1 1 0.5 0.3 3 2 2 4 4 1 1 1 2 1 2 2 2 1.5 0.3 8+ 8+ - 2SD366A 2SD330 2SD331 - ft 4 4 5 2 4 1 1 1.5 1.4 10 1.5 1 3 2 2 - - # # # 0.5 1 0.5 0.5

2SB514

Abstract: 2SD330
Contextual Info: SavantIC Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD330 ·Low collector saturation voltage APPLICATIONS ·Suited for use in output stage of 10W AF power amplifier PINNING

2SD330

Abstract: 2SB514 2SD313
Contextual Info: Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions • Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313.

2SB514

Abstract: 2SD330
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB514 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD330

2SB514

Abstract: 2SD330
Contextual Info: JMnic Product Specification 2SB514 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD330 ・Low collector saturation voltage APPLICATIONS ・Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION

SLA6023 application

Abstract: SLA*6022 2SB883 2SC231 2Sc2314 2Sc4211 2SC3985 2SD330 LB1823M LB1822
Contextual Info: Ordering number : EN4696B Monolithic Digital IC LB1823M Power Brushless Motor Predriver IC for OA Applications Overview Package Dimensions The LB1823M is a predriver IC developed for driving power brushless motors in office automation applications. A motor driver circuit with the desired output power

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB528

Abstract: 2SB540 2SB511 2Sd358 2SB525 2SB526 2SB527 2SB530 2SD287 2SB539
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SB502 -110 -8 -3A 2SB502A -110 -10 -3A 2SB503 -70 -8 -3A 2SB503A -80 -10 -3A 2SB504 2SB504A -80 -100 -10 -2A -10 -2A 2SB505 -80 -10 -2A 2SB506 -150 -7 -5A 2SB506A -150 -7 -5A

2SD424

Abstract: 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023
Contextual Info: - 059 ^ 1060 1061 , 10 62 1066 1067 1068 1070 1071 1073 1074 / 1075 ^ 1076 1077 1077A 1079 1080 1081 1082 1083 1084 1085 1088 _ 1089 / 1095 10961097 1098_' 1098A 1099 1100 SANYO TOSHIBA *±a 1 NEC tL B HITACHI Ä ± ifi FUJITSU tö T MATSUSHITA = m MITSUBISHI

Contextual Info: Ordering number : EN4263B Monolithic Digital 1C _ LB1823 SAffYO Power Brushless Motor Predriver IC for OA Applications Overview Package Dimensions The LB 1823 is a predriver IC developed for driving power brushless motors in office automation applications.

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc