2SD13 Search Results

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1313 INDUSTRIAL APPLICATIONS Unit in n HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATU R E S : . High Power Dissipation : . High Collector Current : . High Speed Switching : . Low Saturation Voltage :

2SD1376

Abstract: Darlington NPN Silicon Diode npn 100v 1.5a 2SB1012
Contextual Info: Inchange Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION

2SD1353

Contextual Info: St TOS HIBA { D I S C R E T E /O PT O } DEjTD^SSG 00D7clia □ | 56C 90972 50 TOSH IBA <DI SCRETE/OPTO 07918 D T- 2SD1353 S IL IC O N NPN T R IP L E D IF F U SE D TYPE_ AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: Unit in mm " l a 3 MAX

RA5E

Abstract: 2SD131 2SD1316
Contextual Info: Power Transistors 2SD1316 2SD1316 Package Dim ensions Unit . mm , Silicon NPN Triple-D iffused Planar Darlington Type 3.7max l. lm a x . Medium Speed Power Sw itching j • Features • • • • • 30V Z en er diode built -in b e tw e e n C and B Very sm all fluctuation in breakdow n vo ltag es

2SD133

Abstract: 2SD1336 2SD1336A 2sd darlington panasonic 2SD Scans-001793
Contextual Info: Power Transistors 2SP 1336.2SD 1336A bT32fl52 G01b?].2 3bb • g g 2SD1336, 2SD1336A ■ Package Dim ensions Silicon NPN Triple-Diffused Planar Darlington Type Power Switching ■ Features • High speed switching • Good linearity of DC current gain I i f e

2SD1318

Abstract: 30v ZENER DIODE
Contextual Info: Power Transistors 2SD1318 2SD1318 Package Dim ensions Silicon NPN Triple-D iffused Planar D arlington Type M edium Speed Power Sw itching • Features • 30V Z e n e r d iode b uilt-in b e tw e e n C and B • V ery sm all flu ctu atio n in b reak d o w n v o ltag es

2SB989

Abstract: 2SD1352 3PF8 tc2530
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 APPLICATIONS ·Designed for general purpose application

2SD1399

Abstract: NPN 800V
Contextual Info: Inchange Semiconductor Product Specification 2SD1399 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For horizontal output applications PINNING PIN

2SD1325

Contextual Info: Power Transistors 2SD1325 2SD 1325 Package D im ensions Unit ! mm 4.4m ax. 10.2m ax. Silicon NPN Triple-D iffused Planar Darlington Type 2 9max M edium Speed Pow er S w itching • Features 0 3 .1 + 0.1 • 6 0 V Z e n e r d iod e built-in b e tw e e n C and B

trf 510 transistor

Abstract: trf 510 2SD1319
Contextual Info: Power Transistors 2SD1319 ^=332*152 a a i b b T 4 s i o 2SD1319 Package D im ensions Unit : mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max 1. lmax 8.7 max. 6.5 max. M edium Speed Power S w itching I* *1 _D • Features • • • • • 60V Zener diode built-in between C and B

2sd1314

Abstract: 2-21F1A 2Sd13
Contextual Info: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)

Contextual Info: Product specification 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃

Contextual Info: Transistors SMD Type Product specification 2SD1368 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO

2SB1002

Abstract: 2SD1368 2SD789 Mark CA DSA003638
Contextual Info: 2SD1368 Silicon NPN Epitaxial ADE-208-1148 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25°C)

2SB1001

Abstract: 2SD1367 DSA003638
Contextual Info: 2SD1367 Silicon NPN Epitaxial ADE-208-1147 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)

Contextual Info: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Peak collector current

2sb405

Abstract: 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD11 25 15 300 150 85 2SD12 75 4 2.5A 60W(Tc=25ºC) 150 2SD13 35 4 10A 100W(Tc=25ºC) 150 2SD14 75 4 10A 100W(Tc=25ºC) 150 2SD15 60 6 6A 80W(Tc=25ºC) 150 2SD16 100

Hitachi DSA001650

Contextual Info: 2SB1012 K Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 ID 5 kΩ (Typ) 1 kΩ (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item

Contextual Info: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SD1367 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO