2SD131 Search Results

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1313 INDUSTRIAL APPLICATIONS Unit in n HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATU R E S : . High Power Dissipation : . High Collector Current : . High Speed Switching : . Low Saturation Voltage :

RA5E

Abstract: 2SD131 2SD1316
Contextual Info: Power Transistors 2SD1316 2SD1316 Package Dim ensions Unit . mm , Silicon NPN Triple-D iffused Planar Darlington Type 3.7max l. lm a x . Medium Speed Power Sw itching j • Features • • • • • 30V Z en er diode built -in b e tw e e n C and B Very sm all fluctuation in breakdow n vo ltag es

2SD1318

Abstract: 30v ZENER DIODE
Contextual Info: Power Transistors 2SD1318 2SD1318 Package Dim ensions Silicon NPN Triple-D iffused Planar D arlington Type M edium Speed Power Sw itching • Features • 30V Z e n e r d iode b uilt-in b e tw e e n C and B • V ery sm all flu ctu atio n in b reak d o w n v o ltag es

trf 510 transistor

Abstract: trf 510 2SD1319
Contextual Info: Power Transistors 2SD1319 ^=332*152 a a i b b T 4 s i o 2SD1319 Package D im ensions Unit : mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max 1. lmax 8.7 max. 6.5 max. M edium Speed Power S w itching I* *1 _D • Features • • • • • 60V Zener diode built-in between C and B

2sd1314

Abstract: 2-21F1A 2Sd13
Contextual Info: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)

Contextual Info: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

LIPO

Abstract: 2SD1315 DIODE S3L 2SD1316 2SD1317 30v 1,3w zener diode
Contextual Info: PANASONIC INDL/ELEK-CSENI} 7EC D I b ^ E S S M dQaibaM 4 I T < ? 3 -¿1 I 2SD1315 2SD1315 *> \J =i y N P N = S i £ * j c y -i V> h > / Si N P N Triple Diffused Planar Darlington /M e d iu m Speed Pow er Switching U n it • mm 10.2m ax. • ^ • aJ h Fe

2SD1312

Abstract: 2SB984
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SD1312 The 2SD1312 is designed for use in driver and output stages of audio frequency amplifiers. PACKAGE DIMENSIONS in millimeters inches FEATURES • High total power dissipation and high breakdown voltage: 1.0 W at 25 °C ambient temperature /V qeo = 8 0 V

2Sd13

Contextual Info: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)

2SD1318

Contextual Info: Power Transistors 2SD1318 2SD1318 Package Dim ensions U n it ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max, 8.7 n Medium Speed Power Sw itching l.lm a x 6.5m ax. r— i • Features • 30V Zener diode built-in between C and B • Very small fluctuation in breakdown voltages

2sd1314

Abstract: 2-21F1A
Contextual Info: 2SD1314 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1314 通 信 工 業 用 ○ 大電力スイッチング用 ○ モータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 100 (最小) (IC = 15 A)

2sd1314

Abstract: 2-21F1A
Contextual Info: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)

Contextual Info: TOSHIBA 2SD1313 TOSHIBA TRANSISTOR n w ar SILICON NPN TRIPLE DIFFUSED TYPE nm m r n m w êt n• mm HIGH PO W ER AM PLIFIER APPLICATIONS. HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 20.5MAX. • • • • High Power Dissipation

Contextual Info: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)

2SD1315

Contextual Info: Power Transistors 2 S D13 15 2SD1315 P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar Darlington Type ^ U n it mm 4.4max. 10.2max. 2.9max M ed iu m S p ee d P o w e r • F e a tu re s £3.1 ±0.1 • High DC cu rre n t gain htE • High collector-base voltage

2SD1317

Abstract: p82 diode p82n
Contextual Info: Pow er Transistors 2SD1317 2SD1317 Package Dim ensions Unit . mm Silicon NPN Triple-Diffused Planar Darlington Type 8.7 M edium Speed Power S w itching 3.7max. n l.l.max. 6. 5m ax . r— i _D • Features • 30V Z e n e r d iode b u ilt-in b e tw e e n C and B

2SD1315

Abstract: A401
Contextual Info: P o w er T ra n s is to rs 2S D 13 15 2SD1315 P a c k a g e D im e n s io n s Silicon NPN Triple-Diffused Planar Darlington Type 5 7max 2.9m ax “ tr M e d iu m S p e e d P o w e r • Unit ' mm 4.4max. 10.2max. F e a tu re s X 03.1 • H igh D C c u r r e n t gain h fE

2SD1319

Contextual Info: Power Transistors 2SD1319 bT35flSE O O l b b T M SID 2SD1319 Package D im ensions U n it ì mm Silicon NPN Triple-Diffused Planar Darlington Type 8 .7 M edium Speed Power Sw itching 3 .7 m ax . max. 1.1 max. 6.5 max. jq • Features • 60V Zener diode built-in between C and B

2SB1039

Abstract: 2SD1309 MP40 2SD1347 2SD1304 2SD1305 2SD1306 2SD1308 2SD1310 2SD1311
Contextual Info: - 244 - Ta=25tC, *EPííTc=25'C m % tt g 2SD1304 tëT LF A 2SD1305 HV LF A 2SD1306 1ST H i 2SD1308 H U LF PA/LS PSW 2SD1309 H S LF PA/LS PSW 2SD1310 LF A/Mut I VcBO VcEQ ice DC) Pe Pe* (V) (V) (A) (W) (W) I ÍCB0 (max) VcB (V) (UH) (min) Í1FE W íl (max)

2SD1316

Abstract: 30v 1,3w zener diode
Contextual Info: Power Transistors 2SD1316 2SD1316 Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type U ni t . mm 3.j7max 8.7 max Medium Speed Power Switching | l .l m a x . 6 5 max • Features • 30V Z ener diode built-in b etw een C and B • Very small fluctuation in breakdow n voltages

2-21F1A

Abstract: 2SD1314
Contextual Info: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) · Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)