2SA1179 Search Results

2SA1179

Abstract: transistor marking 3k
Contextual Info: 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High breakdown voltage A L 3 3 C B Top View 1 MARKING 1 K Product Marking Code

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . High breakdown voltage 1 1. BASE 2 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

2018a

Abstract: 2SC2812 2SA1179 X-2476 A1179
Contextual Info: S A W f O - 3 .- X - X ^ 0 9 0 0 ,6 9 1 0 ’87 88 7 - 9 ~f v 9 i «IJ-T- * f 2SA1179/2SC2812 7 y «Ä • { nNa32í8 6199 No.6901» t ^ P N P / N P N 1 1 ? 5» =* V 7 J ¡^ ¿ 5 ^ ? VO tzih*\i y h iO ^ Ç H .-ft.ïJlS .H k ^ ô riB îT '*« fit rn "C & £ o

10u 35v

Abstract: 2SA1179 sot 23 PNP
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

Contextual Info: 2SA1179 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage

2SA1179N6

Contextual Info: 2SA1179N/2SC2812N Ordering number : EN7198B SANYO Semiconductors DATA SHEET 2SA1179N/2SC2812N PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications Features • • Miniature package facilitates miniaturization in end products

Contextual Info: 2SA1179 / 2SC2812 Ordering number : EN3218B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179 / 2SC2812 Low-Frequency General-Purpose Amplifier Applications Features • • Miniature package facilitates miniaturization in end products.

2SC2812N6-CPA-TB-E

Abstract: 2SA1179N6
Contextual Info: 2SA1179N/2SC2812N Ordering number : EN7198B SANYO Semiconductors DATA SHEET 2SA1179N/2SC2812N PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications Features • • Miniature package facilitates miniaturization in end products

2SC2812

Abstract: k 2057 3v61 2SA1179 600S8 T29 marking marking AJR 2SC28 AJR MARKING
Contextual Info: SANYO SEMICONDUCTOR CORP 7T=]707t. DDD7B^t EBE D 2SA1179, 2SC2812 1 T -Z 1-I5 P N P /N P N Epitaxial Planar Silicon Transistors 2018A Low-Frequency General-Purpose Amp Applications 3218 F e a tu re s •Small-sized package perm itting the 2SA1179/2SC2812-applied sets to be made small and slim

Contextual Info: Ordering number : EN7198B 2SA1179N/2SC2812N Bipolar Transistor http://onsemi.com – 50V, (–)150mA, Low VCE(sat), (PNP)NPN Single CPA Features • • Miniature package facilitates miniaturization in end products High breakdown voltage Specifications ( ) : 2SA1179N

Contextual Info: Product specification 2SA1179 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25

2SA1179

Contextual Info: RECTRON 2SA1179 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * High breakdown voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * * 1 BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed

2SC2812N

Abstract: 2SA1179N 2sa117 2SA1179 2SC2812
Contextual Info: Ordering number : ENN7198 2SA1179N / 2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features • Package Dimensions Miniature package facilitates miniaturization in end products. High breakdown voltage.

2SA1179

Abstract: 10u 35v
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High forward current transfer ratio hFE Lead-free which has satisfactory linearity. z High speed switching. z Complementary to 2SD1749. 2SA1179 APPLICATIONS z For power application and switching.

2SA1179

Abstract: 2SC2812 IT12013 2SA1179M
Contextual Info: 2SA1179 / 2SC2812 注文コード No. N 3 2 1 8 B 三洋半導体データシート 半導体ニューズ No.N3218 をさしかえてください。 2SA1179 / 2SC2812 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 低周波一般増幅用

2SC2812

Abstract: 2SA1179 IT12010
Contextual Info: 2SA1179 / 2SC2812 Ordering number : EN3218B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179 / 2SC2812 Low-Frequency General-Purpose Amplifier Applications Features • • Miniature package facilitates miniaturization in end products.

Contextual Info: 2SA1179N / 2SC2812N Ordering number : EN7198A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features • • Miniature package facilitates miniaturization in end products.

2SA1179

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SA1179 Pb Lead-free High breakdown voltage. APPLICATIONS z General purpose application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code M SOT-23 2SA1179

2SC2812NL

Abstract: 2SC2812N 2SA1179 2SA1179N 2SC2812
Contextual Info: 注文コード No. N 7 1 9 8 2SA1179N / 2SC2812N No. N7198 72602 新 2SA1179N / 2SC2812N 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 低周波一般増幅用 ・小型パッケージのためセットの小型化、薄型化が可能である。

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt