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    2SC28 Search Results

    2SC28 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SC2873
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=2 A / hFE=70~240 / VCE(sat)=0.5 V / tf=0.1 μs / PW-Mini Datasheet

    2SC28 Datasheets (500)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC28
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 64.67KB 1
    2SC28
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 39.55KB 1
    2SC28
    Unknown Transistor Substitution Data Book 1993 Scan PDF 40.17KB 1
    2SC28
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 93.68KB 1
    2SC28
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 116.41KB 1
    2SC28
    Unknown The Japanese Transistor Manual 1981 Scan PDF 105.88KB 2
    2SC28
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.13KB 1
    2SC28
    Unknown Japanese Transistor Cross References (2S) Scan PDF 30.61KB 1
    2SC28
    Unknown Cross Reference Datasheet Scan PDF 33.74KB 1
    2SC280
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 62.43KB 1
    2SC280
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.6KB 1
    2SC280
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 118.36KB 1
    2SC280
    Unknown The Japanese Transistor Manual 1981 Scan PDF 105.36KB 2
    2SC280
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 86.04KB 1
    2SC280
    Unknown Japanese Transistor Cross References (2S) Scan PDF 33.77KB 1
    2SC2800
    Mitsubishi NPN SPITAXIAL PLANAR TYPE Scan PDF 74.4KB 3
    2SC2800
    Mitsubishi NPN Epitaxial Planar Type Scan PDF 176.49KB 3
    2SC2800
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 100.43KB 2
    2SC2800
    Unknown Transistor Substitution Data Book 1993 Scan PDF 35.72KB 1
    2SC2800
    Unknown High Frequency Device Data Book (Japanese) Scan PDF 53.84KB 1
    ...
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    2SC28 Price and Stock

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    onsemi 2SC2812-6-TB-E

    2SC2812-6-TB-E
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    Verical 2SC2812-6-TB-E 291,000 13,275
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    Avnet Americas 2SC2812-6-TB-E Tape & Reel 3,000
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    Quest Components 2SC2812-6-TB-E 4,800
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    Rochester Electronics 2SC2812-6-TB-E 291,000 1
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    onsemi 2SC2812-5-TB-E

    Trans GP BJT NPN 50V 0.15A 200mW 3-Pin Case CP T/R
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    Verical () 2SC2812-5-TB-E 273,000 13,275
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    2SC2812-5-TB-E 114,000 13,275
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    Rochester Electronics 2SC2812-5-TB-E 387,000 1
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    Vyrian 2SC2812-5-TB-E 8,514
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    onsemi 2SC2812-7-TB-E

    2SC2812-7-TB-E
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    Verical () 2SC2812-7-TB-E 258,000 1,244
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    2SC2812-7-TB-E 105,000 1,244
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    2SC2812-7-TB-E 39,000 1,244
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    Rochester Electronics 2SC2812-7-TB-E 402,000 1
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    onsemi 2SC2814-5-TB-E

    Trans RF BJT NPN 20V 0.03A 150mW 3-Pin Case CP Tape
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    Verical () 2SC2814-5-TB-E 45,000 789
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    2SC2814-5-TB-E 6,000 789
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    2SC2814-5-TB-E 6,000 789
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    2SC2814-5-TB-E 6,000 789
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    Rochester Electronics 2SC2814-5-TB-E 66,000 1
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    SANYO Semiconductor Co Ltd 2SC2839E-SPA-AC

    2SC2839E-SPA-AC
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    Verical 2SC2839E-SPA-AC 35,000 6,834
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    Rochester Electronics 2SC2839E-SPA-AC 35,000 1
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    2SC28 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1184

    Abstract: 2sc2824
    Contextual Info: TOSHIBA { D I S C R E T E / O P T O 9097250 TOSHIBA 5b CDIS C R E T E / O P T O D E ^ O T O S i: 5 òC 07606 aOOTbDt, û 2SC2824 SILICON NPN E PIT A X IA L TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 7.9MAX. FEATURES: • Complementary to 2SA1184.


    OCR Scan
    2sc28242sa11840760f PDF

    2SA1201

    Abstract: 2SC2881
    Contextual Info: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


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    2sc2881120mhz2sa1201100ma+1500ma PDF

    2SC2830

    Contextual Info: JMnic Product Specification 2SC2830 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Wide area of safe operation APPLICATIONS ・For switching regulator applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2


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    2sc2830 PDF

    2SC2832

    Abstract: 2SC2832A ic 3A hfe 500
    Contextual Info: JMnic Product Specification 2SC2832 2SC2832A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・High VCBO ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION


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    2sc28322sc2832ao-220ic 3a hfe 500 PDF

    2sa1186

    Abstract: 2SC2837 2SA1186 2SC2837
    Contextual Info: JMnic Product Specification 2SA1186 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High current capability ・Complement to type 2SC2837 APPLICATIONS ・Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2sa11862sc28372sa1186 2sc2837 PDF

    Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2859 A U D IO FREQUENCY LO W PO W ER AM PLIFIER APPLICATIONS. U n it in m m DRIVER STAGE AM PLIFIER APPLICATIONS. + 0.5 - 0.3 + 0.25 . 1.5 - 0.15 SW ITCH IN G APPLICATIONS. • • 25 Excellent hpE Linearity : hFE 2 = 25(Min.) (V qe = 6V, Ic = 400mA)


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    2sc2859400ma2sa1182100ma+325min40min70min PDF

    Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6 MAX. FEATURES: 1.7 MAX. . High Voltage J 3 = : V c e q =120V . High Transition Frequency : fT=120MHz . Pc=l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package + CL08 Q45 — Q.05


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    2sc2881120mhz2sa12010l4-q05+2100ma500ma PDF

    Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)


    OCR Scan
    2sc28732sa12134-q0550base-- PDF

    693F TRANSISTOR

    Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A
    Contextual Info: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.


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    320mhz693f transistor693fn20j+4transistor 693f2sc28142sc28hii04a PDF

    693F TRANSISTOR

    Abstract: 693F transistor 693f 2SC2814 P3NF
    Contextual Info: O rdering number : EN 693F _ 2SC2814 N0.693F NPN Epitaxial P lanar Silicon Transistor SANYO High-Frequency General-Purpose Amp Applications I Features . Very small package enabling compactness and slimness of sets. . High fx and small Cre* fT=320MHz typ, cre=0.95pF typ


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    2sc2814320mhz693f transistor693f+2transistor 693fp3nf PDF

    2SC2841

    Abstract: pnp 500v SC-65
    Contextual Info: Power Transistors 2 SC2 8 4 1 2SC2841 Silicon PNP Triple-Diffusëd Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features Unit ! mm .lS.Srnax. • 4.7rnax. • High speed switching 2.1max. • High collector-base voltage V cbo


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    2sc284150fihpnp 500vsc-65 PDF

    2SC2881L

    Abstract: 032 b
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION


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    2sc2881120mhz2sa1201ot-89+62sc2881l-x-ab3-r2sc2881g-x-ab3-rqw-r204-032qw-r208-0322sc2881l032 b PDF

    2sc2834a

    Abstract: 2SC2834
    Contextual Info: Inchange Semiconductor Product Specification 2SC2834 2SC2834A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High speed switching ・High VCBO ・Low collector saturation voltage APPLICATIONS ・For high speed switching applications PINNING


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    2sc28342sc2834a2sc3834a PDF

    2SC2841

    Contextual Info: Inchange Semiconductor Product Specification 2SC2841 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION


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    2sc2841 PDF

    power transistor audio amplifier 500 watts

    Abstract: 2SA1203 smd diode 03A 2SC2883
    Contextual Info: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1203 Features Suitable For Output Stage of 3 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2883 Absolute Maximum Ratings Ta = 25 Parameter Symbol


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    2sa12032sc2883-10ma-500ma+2power transistor audio amplifier 500 wattssmd diode 03a PDF

    2SC2831

    Abstract: 2SC2831A
    Contextual Info: Inchange Semiconductor Product Specification 2SC2831 2SC2831A Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING


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    2sc28312sc2831ao-220 PDF

    2SA1204

    Abstract: 2SC2884
    Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


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    2sc28842sa1204 PDF

    Contextual Info: SMD Type Product specification 2SA1202 Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2882 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


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    2sa12022sc2882-10ma-50ma+2-200ma-20ma PDF

    Contextual Info: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


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    2sa12042sc2884-100ma-700ma+3-500ma-20ma-10ma PDF

    2SA1189

    Abstract: Hitachi DSA0097 2SA1188 2SA1190 2SA1191 2SC2853 2SC2854
    Contextual Info: 2SA1188, 2SA1189 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1188


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    2sa11882sa11892sc28532sc2854+3hitachi dsa00972sa11902sa1191 PDF

    2SC2816

    Contextual Info: SavantIC Semiconductor Product Specification 2SC2816 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·High speed APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base


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    2sc2816o-220c PDF

    2SC2815

    Contextual Info: SavantIC Semiconductor Product Specification 2SC2815 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits


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    2sc2815o-220c PDF

    2SC2830

    Contextual Info: SavantIC Semiconductor Product Specification 2SC2830 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING See Fig.2 PIN DESCRIPTION


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    2sc2830 PDF

    2sc2810

    Contextual Info: SavantIC Semiconductor Product Specification 2SC2810 Silicon NPN Power Transistors •Wit DESCRIPTION With TO-220C package ·High voltage,High speed APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


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    2sc2810o-220c PDF