2SC2881 Search Results

2SC2881 Datasheets (30)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC2881	Kexin	Voltage Amplifier Applications	Original	PDF	362.16KB	2
2SC2881	Toshiba	NPN Transistor	Original	PDF	148.53KB	4
2SC2881	Unisonic Technologies	VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS	Original	PDF	114.41KB	3
2SC2881	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	44.21KB	1
2SC2881	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	94.02KB	2
2SC2881	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	33.71KB	1
2SC2881	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	102.75KB	2
2SC2881	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	122.67KB	1
2SC2881	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	73.71KB	1
2SC2881	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	34.78KB	1
2SC2881	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	50.05KB	1
2SC2881	Toshiba	Silicon NPN transistor for power amplifier applications	Scan	PDF	185.04KB	3
2SC2881	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF	185.48KB	3
2SC2881	Toshiba	SOT-89 Transistors	Scan	PDF	46.88KB	1

2SC2881-O	Toshiba	2SC2881 - TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal	Original	PDF	144.03KB	4
2SC2881O	Toshiba	Silicon NPN Epitaxial Type (PCT process)	Original	PDF	100.92KB	4
2SC2881OTE12L	Toshiba	2SC2881 - TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF	144.03KB	4
2SC2881OTE12R	Toshiba	2SC2881 - TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF	144.03KB	4
2SC2881-O-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PREBIAS NPN 120V SOT89	Original	PDF	258.36KB
2SC2881TE12L	Toshiba	2SC2881 - TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF	144.03KB	4

2SC2881 Price and Stock

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Toshiba America Electronic Components 2SC2881-Y(TE12L,F) TRANSISTOR (SILICON)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SC2881-Y(TE12L,F)		12,000		1,972	1 - 10 - 100 - 1000 - 10000 $0.17	Buy Now
Rochester Electronics	2SC2881-Y(TE12L,F)		12,000		1	1 - 10 - 100 $0.18 1000 $0.15 10000 $0.14	Buy Now
Toshiba America Electronic Components 2SC2881-Y(TE12L,ZC Trans GP BJT NPN 120V 0.8A 1000mW 4-Pin(3+Tab) PW-Mini T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2SC2881-Y(TE12L,ZC		1,955		345	1 - 10 - 100 - 1000 $0.21 10000 $0.21	Buy Now
	2SC2881-Y(TE12L,ZC		44		16	1 - 10 - 100 $0.29 1000 $0.13 10000 $0.13	Buy Now
Avnet Americas	2SC2881-Y(TE12L,ZC	Tape & Reel		21 Weeks, 3 Days	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	2SC2881-Y(TE12L,ZC		9,911			1 $0.80 10 $0.49 100 $0.32 1000 $0.22 10000 $0.19	Buy Now
Arrow Electronics	2SC2881-Y(TE12L,ZC	Cut Strips	44		1	1 $0.73 10 $0.45 100 $0.29 1000 $0.13 10000 $0.13	Search Findchips
Newark ()	2SC2881-Y(TE12L,ZC	Tape & Reel	3,659		100	1 - 10 - 100 $0.48 1000 $0.46 10000 $0.44	Buy Now
	2SC2881-Y(TE12L,ZC	Cut Tape	3,659		1	1 $0.80 10 $0.80 100 $0.48 1000 $0.46 10000 $0.44	Buy Now

Quest Components	2SC2881-Y(TE12L,ZC		1,564			1 $0.67 10 $0.67 100 $0.67 1000 $0.27 10000 $0.27	Buy Now
Avnet Asia	2SC2881-Y(TE12L,ZC			28 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	2SC2881-Y(TE12L,ZC			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SC2881-Y(TE12L,C) - Tape and Reel (Alt: 2SC2881-Y(TE12L,C))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SC2881-Y(TE12L,C)	Tape & Reel		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SC2881YTE12LCF Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SC2881YTE12LCF		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others 2SC2881(Y)-T INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	2SC2881(Y)-T		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 2SC2881 price and stock on Findchips.com

2SC2881 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1201 Abstract: 2SC2881 Contextual Info: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage	Original	2sc2881 120mhz 2sa1201 100ma +1500ma	PDF
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6 MAX. FEATURES: 1.7 MAX. . High Voltage J 3 = : V c e q =120V . High Transition Frequency : fT=120MHz . Pc=l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package + CL08 Q45 — Q.05	OCR Scan	2sc2881 120mhz 2sa1201 0l4-q05 +2100ma 500ma	PDF
2SC2881L Abstract: 032 b Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 SOT-89 RDERING INFORMATION	Original	2sc2881 120mhz 2sa1201 ot-89 +62sc2881l-x-ab3-r 2sc2881g-x-ab3-r qw-r204-032 qw-r208-032 2sc2881l 032 b	PDF
2SA1201 Abstract: 2SC2881 Contextual Info: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	2sc2881 2sa1201	PDF
marking V0 SOT-89 Abstract: 2SC2881 Contextual Info: MCC TM Micro Commercial Components 2SC2881-O 2SC2881-Y omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information	Original	2sc2881-o 2sc2881-y ot-89 marking v0 sot-89 +12sc2881	PDF
Contextual Info: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	2sc2881 2sa1201	PDF
2SC2881 Contextual Info: 2SC2881 2SC2881 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 800 mA Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃	Original	2sc2881 ot-89 100ma 500ma	PDF
2SA1201 Abstract: 2SC2881 Contextual Info: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V · High transition frequency: fT = 120 MHz (typ.) · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	2sc2881 2sa1201	PDF
2SA1201 Abstract: 2SC2881 Contextual Info: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	2sc2881 2sa1201	PDF
2SC2881 Contextual Info: MCC 2SC2881 TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2881-O 2SC2881-Y Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic.	Original	2sc2881 2sc2881-o 2sc2881-y ot-89 +1250mm	PDF
2SC2881O Abstract: 2SC2881 Contextual Info: MCC 2SC2881 TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2881-O 2SC2881-Y Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic. UL Flammability	Original	2sc2881 2sc2881-o 2sc2881-y ot-89 +2250mm 2sc2881o	PDF
2SC2881 Contextual Info: MCC TM Micro Commercial Components 2SC2881-O 2SC2881-Y omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic. UL Flammability	Original	2sc2881-o 2sc2881-y ot-89 250mm +12sc2881	PDF
2SA1201 Abstract: DY TRANSISTOR 2SC2881 PNP TRANSISTOR SOT89 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1201 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	ot-89 2sa1201 2sc2881 -10ma +6-120v -100ma -500ma -50ma dy transistor pnp transistor sot89	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS  FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201  SOT-89 ORDERING INFORMATION	Original	2sc2881 120mhz 2sa1201 ot-89 +22sc2881g-x-ab3-r qw-r208-032	PDF

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC2881 NPN SILICON TRANSISTOR V OLT AGE AM PLI FI ER APPLI CAT I ON S POWER AM PLI FI ER APPLI CAT I ON S ̈ FEAT U RES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 ̈ SOT-89	Original	2sc2881 120mhz 2sa1201 ot-89 +42sc2881l-x-ab3-r 2sc2881g-x-ab3-r qw-r204-032 qw-r208-032	PDF
2SA1201 Abstract: 2SC2881 Contextual Info: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	2sc2881 2sa1201	PDF
Contextual Info: Reliability Tests Report Product Name: 2SC2881 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s	Original	2sc2881	PDF
2SA1201 Abstract: 2SC2881 Contextual Info: 2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 E C B MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter	Original	2sa1201 ot-89 2sc2881 -500ma +3-50ma -100ma 08-may-2007	PDF
Contextual Info: SMD Type Product specification 2SA1201 Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2881 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO	Original	2sa1201 -120v 120mhz 2sc2881 +3-100ma -500ma -50ma	PDF
2SA1201 Abstract: 2SC2881 Contextual Info: 2SC2881 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC2881 ○ 電力増幅用 ○ 励振段増幅用単位: mm • 高耐圧です。 • トランジション周波数が高い。 : fT = 120 MHz (標準) • 小型フラットパッケージでハイブリッド IC 組立て用に適します。	Original	2sc2881 2sa1201 sc-62 20070701-ja	PDF
2SA1201 Abstract: 2SC2881 Contextual Info: TOSHIBA 2SC2881 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 1.6 M AX — High Voltage : VCEO —120V High Transition Frequency : frp = 120MHz (Typ.) P q = 1~2W (Mounted Ceramic Substrate) Small Flat Package	OCR Scan	2sc2881 120mhz 2sa1201 250mm2 +1961001eaa2	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2881 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 800 mA Collector-base voltage	Original	ot-89 2sc2881 100ma 500ma	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1201 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	ot-89-3l 2sa1201 2sc2881 -10ma +4-120v -100ma -500ma -50ma	PDF
2SA1201 Abstract: 2SC2881 Contextual Info: TO SH IBA 2SC2881 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 1.6 M A X. 4.6 M A X. High Voltage : V0 EO = 12OV High Transition Frequency : frp= 120MHz (Typ.) P q = 1~2W (Mounted Ceramic Substrate)	OCR Scan	2sc2881 120mhz 2sa1201 250mm2	PDF

2SC2881 Search Results

2SC2881 Datasheets (30)

2SC2881 Price and Stock

Toshiba America Electronic Components 2SC2881-Y(TE12L,F)

Toshiba America Electronic Components 2SC2881-Y(TE12L,ZC

Toshiba America Electronic Components 2SC2881-Y(TE12L,C)

Toshiba America Electronic Components 2SC2881YTE12LCF

Others 2SC2881(Y)-T

2SC2881 Datasheets Context Search

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