2SA117 Search Results

2SC2774

Abstract: 2SA1170 transistor 12v 8A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1170 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2774 APPLICATIONS ·Designed for power amplifier and general purpose

2SA1179

Abstract: transistor marking 3k
Contextual Info: 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High breakdown voltage A L 3 3 C B Top View 1 MARKING 1 K Product Marking Code

2SA1175

Contextual Info: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . High breakdown voltage 1 1. BASE 2 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

TRANSISTOR BI 340

Abstract: 2sc2774
Contextual Info: , LJnc. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 2SA1170 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE 2.COLLECTOR V(BR)CEo= -200V(Min) • High Power Dissipation

2018a

Abstract: 2SC2812 2SA1179 X-2476 A1179
Contextual Info: S A W f O - 3 .- X - X ^ 0 9 0 0 ,6 9 1 0 ’87 88 7 - 9 ~f v 9 i «IJ-T- * f 2SA1179/2SC2812 7 y «Ä • { nNa32í8 6199 No.6901» t ^ P N P / N P N 1 1 ? 5» =* V 7 J ¡^ ¿ 5 ^ ? VO tzih*\i y h iO ^ Ç H .-ft.ïJlS .H k ^ ô riB îT '*« fit rn "C & £ o

2SA1177

Abstract: TA-2005 N851G
Contextual Info: 注文コード No.N 8 5 1 G 2SA1177 No. N851G O0899 単品カタログ No.C851F とさしかえてください。 2SA1177 PNP エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用 用途 ・FM RF 増幅 , ミキサ , 発振 , コンバータ , IF 増幅用に最適である。

Contextual Info: 2SA1171 Silicon PNP Epitaxial REJ03G0638-0200 Previous ADE-208-1010 Rev.2.00 Aug.10.2005 Application Low frequency small signal amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings

2SA1173

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1173 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SA1173 is designed fo r audio frequency pream plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

2SA1175

Abstract: transistor 2sa1175
Contextual Info: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA1175

Abstract: hfe 300 pin configuration transistor 2sa1175 TRANSISTOR K 135
Contextual Info: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA1174

Contextual Info: ST 2SA1174 PNP Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into three group, P, F and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA1170

Abstract: 2sc2774
Contextual Info: Inchange Semiconductor Product Specification 2SA1170 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation ·Complement to type 2SC2774 APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SA1171

Abstract: Hitachi DSA0076 2SA872
Contextual Info: 2SA1171 Silicon PNP Epitaxial ADE-208-1010 Z 1st. Edition Mar. 2001 Application Low frequency small signal amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1171 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

SMD TRANSISTOR MARKING NK

Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC2780 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 • Features 2.50±0.1 4.00±0.1 ● High Collector-emitter voltage. ● Complements to PNP type 2SA1173 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1

2SA1177

Abstract: 8511
Contextual Info: Ordering number:EN851G PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. unit:mm 2033 [2SA1177] Features · High fT 230MHz typ. and small Cre (1.1 pF typ.).

Contextual Info: 2SA1179 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage

2SA1171

Abstract: 2SA872 Hitachi DSA00397
Contextual Info: 2SA1171 Silicon PNP Epitaxial Application Low frequency small signal amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1171 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –90 V Collector to emitter voltage

2SA1179N6

Contextual Info: 2SA1179N/2SC2812N Ordering number : EN7198B SANYO Semiconductors DATA SHEET 2SA1179N/2SC2812N PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications Features • • Miniature package facilitates miniaturization in end products

Contextual Info: 2SA1171PE Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)90è V(BR)CBO (V)90 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.

2SA1173

Contextual Info: SILICON TRANSISTOR 2SA1173 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N The 2S A 1173 is designed fo r audio frequency p ream plifier app lica tion, especially in H y b rid Integrated Circuits. FEATURES • W orld Standard M inia tu re Package

2SA1170

Abstract: 2SC2774 RL4A
Contextual Info: SavantIC Semiconductor Product Specification 2SA1170 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation ·Complement to type 2SC2774 APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

Contextual Info: Ordering number:EN 851G SAiYO No.851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor i HF Amp Applications Use . Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. Features . High fT 230MHz typ. and small cre(l.lpF typ.).

Hitachi 2SA

Abstract: Hitachi DSA002754 2sa872
Contextual Info: 2SA1171 Silicon PNP Epitaxial Application Low frequency small signal amplifier Outline 2SA1171 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –90 V Collector to emitter voltage VCEO –90 V Emitter to base voltage