2SA1177 Search Results

2SA1177

Abstract: TA-2005 N851G
Contextual Info: 注文コード No.N 8 5 1 G 2SA1177 No. N851G O0899 単品カタログ No.C851F とさしかえてください。 2SA1177 PNP エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用 用途 ・FM RF 増幅 , ミキサ , 発振 , コンバータ , IF 増幅用に最適である。

2SA1177

Abstract: 8511
Contextual Info: Ordering number:EN851G PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. unit:mm 2033 [2SA1177] Features · High fT 230MHz typ. and small Cre (1.1 pF typ.).

Contextual Info: Ordering number:EN 851G SAiYO No.851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor i HF Amp Applications Use . Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. Features . High fT 230MHz typ. and small cre(l.lpF typ.).

2SA1177

Abstract: I00MH 851G 8511
Contextual Info: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .

2SA1177

Contextual Info: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .

2SA1177

Abstract: IC1005 2sa117 ITR02968 ITR02969 ITR02970 ITR02971 TA-2005 GFE10
Contextual Info: Ordering number:ENN851H PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. unit:mm 2033A [2SA1177] 4.0 2.2 3.0 Features · High fT 230MHz typ. and small Cre (1.1 pF typ.).

2SA1177

Abstract: hf power amplifiers 2-30 mhz
Contextual Info: Ordering number: EN 7 tì ci7G7ti 0 0 1 5 5 1 5 851G 44D 2SA1177 SAiYO PNP Epitaxial Planar Silicon Transistor i HF Amp Applications Use f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , . Id e a lly s u ite d IF a m p l i f i e r s .

2SA1177

Abstract: ITR02968 ITR02969 ITR02970 ITR02971 ta2005 TA-2005
Contextual Info: Ordering number:ENN851H PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. unit:mm 2033A [2SA1177] 4.0 2.2 3.0 Features · High fT 230MHz typ. and small Cre (1.1 pF typ.).

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

MPS9488

Abstract: 8C208 KT3818 2SA838 8C252 LOW-POWER SILICON PNP MPS948 8C2528 BSY41 8C513
Contextual Info: RF LOW-POWER SILICON PNP Item Part Number Number V BR CEO 5 10 NA02EI NA02FI NA12EI NA22EI NA22FI NA22XI NA22YI NA02EY NA02FY NA22EY ~~~~x~ 15 20 NA22YY 8C2058 8C2088 SF213 SF313 8C2528 8C2538 8C2828 ~~~~~~ 25 30 NA02FJ NA12EJ NA22EJ NA22FJ NA22XJ NA22YJ 8C259C

2SK2335

Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y D e v i c e s AM. RM Tuner* C ase O u t l i n e s u n it:m m F o r TRs SANYO:MCP , 1 '-Base, 2:Emi t t e r , 3 : C o l l e c t o r ; R * n~ ANT 1C AM o s e FM u s e ♦ R F Amp L A I 1 37 L AI 1 9 3

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA1015

Abstract: 2SA733 2SA847A 2SA968 2SA933 2SA823 2SA817 2sa777 2SA970 2SA935
Contextual Info: - m « Type No. 2SA 816 2SA 817 -• 2 SA 818 — 2SA 819 2SA 2SA 2SA 2SA 820 821 822 823 ^ 2SA 824 2SA 825 2SA 826 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 827 828 829 830 — 831 832 ^ 833 834 2SA 8 3 5 2SA 836-'' 2SA 837 2SA 838 2SA 839,*— 2SA 840 ^ 2SA 8412SA 842 2SA 843

VHF Transceiver IC

Abstract: VHF AM Transceiver IC 2SK937 2SC4856 mosfet vhf power amplifier 2SK715 2SK315 2Sc2314 2SC4910 2SC2839
Contextual Info: Continued from previous page Absolute maximum ratings I Device Package Applications type ! Vcao VcEO V I (V) VEBO (V) ta Electrical characteristics (Ta = 25 °C) I ! (mA) | ! Ic b o max @ V cb T, Pc (mW) (4 ) ¡ le s o m ax ! o»A) Vc b TO hFE @ VcE • IC

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

smd transistor marking 12W

Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

Contextual Info: SA\YO CP Chip Pack Transistors We have a full lineup of Chip Pack (package: CP) transistors that are very small-sized, can be applied to various uses, and excel in reliability, quality stability. They are the same except collector dissipation (PC max), as those placed in the

2SK2073

Abstract: 3SK251 spa semiconductor lf SVC355 tuner 92 2SK715
Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y Devices 1 . AM, F'M T u n e r ANT V LAI 137 LAI 193 ♦ B F Amp ★ T u n i nR Diode use SV C 321SPA SVC352 SYC323 SVC353 SVC333 SVC 3 5 4 SVC341 SVC355 SVC3Í2 SVC363 SVC364 SVC343 SVC34 4 S VC 34 5 S VC 3 4 6

2SA1108A

Abstract: 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 60W 2SA1102 -80 -6 -6A 150 80 -4 -2A 20* 150 (Tc=25ºC) 70W 2SA1103