2SA614
Abstract: 2SA616 2sc113 STC5204
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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2sa648 transistor
Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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D634 transistor
Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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npn110usaf520es070m2n150850m5a+1413on032on0600di2n1509d634 transistor2n907 pnp2sa648 transistorstc52022sa6142sa6162sa6532p424se9573b0536
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LB 11911
Abstract: ELF120GGC-4Z50 MIL-0-45204 ECN3313 burndy CARD EDGE SE9562
Contextual Info: NOTES: UNLESS OTHERWISE SPECIFIED, 1 INTERPRET THIS DRAWNG IN ACCORDANCE WITH ANSI Y14.5M-19B2. CATALOG NUMBER DE5CRFTI0N L1 Z COMPONENT BOARD MATERAL: P.C. BOARD: FR-4 WITH 1 OZ. [26,35fl] MIN COPPER PADS. PAD PLATING. 30 MICRONCHES [0,75 MICRONS] MN. 0CLD,
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5m-19b2mil-0-4520400-n-290155iod1+9030tqd2skme29219-delf120ggc-3z50se95622lb 11911elf120ggc-4z50ecn3313burndy card edgese9562
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STC5610
Abstract: B0536 2n3408 2SA614 2SA616 BD272 BD436A STP60S STC5204 D634
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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tht404zv15azy33azt696+16zv15bzy33bzt697zt706zv27azy62atriac zd 607hep c60042sb5042sc 968 npn transistorsje 607motorola c6004diode by127 specificationsk872af118motorola semiconductor hep c3806p
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