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    2N591 Search Results

    2N591 Datasheets (163)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N591
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 72.71KB 1
    2N591
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.69KB 1
    2N591
    Unknown GE Transistor Specifications Scan PDF 39.25KB 1
    2N591
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 140.68KB 1
    2N591
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 110.87KB 1
    2N591
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 92.25KB 1
    2N591
    Unknown Vintage Transistor Datasheets Scan PDF 46.8KB 1
    2N591
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 95.71KB 1
    2N591
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 33.4KB 1
    2N591
    RCA RCA Transistor and Diode Data Scan PDF 45.08KB 1
    2N5910
    Central Semiconductor Various Transistors Scan PDF 327.01KB 3
    2N5910
    Central Semiconductor PMP SILICON SWITCHING TRANSISTORS Scan PDF 66.08KB 1
    2N5910
    Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF 55.64KB 1
    2N5910
    Intersil Shortform Data Book 1983/4 Short Form PDF 61.12KB 1
    2N5910
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 56.61KB 1
    2N5910
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 81.56KB 1
    2N5910
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 49.69KB 1
    2N5910
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 164.06KB 1
    2N5910
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 171.85KB 1
    2N5910
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.33KB 1
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    2N591 Price and Stock

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    Central Semiconductor Corp 2N5912

    TRANSISTOR DUAL TO78
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    Vishay Intertechnologies 2N5912

    Transistor; Gate Source Breakdown Voltage Max:-25V; Zero Gate Voltage Drain Current Max:40Ma; Gate Source Cutoff Voltage Max:-5V; No. Of Pins:6 Pin; Operating Temperature Max:150°C; Channel Type:N Channel; Product Range:-; Msl:- Rohs Compliant: No |Vishay 2N5912
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    Calogic Inc 2N5912

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    Bristol Electronics 2N5912 37
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    Karl Kruse GmbH & Co KG 2N5912 500
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    NAC 2N5912 500
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    Vishay Siliconix 2N5911-2

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    Bristol Electronics 2N5911-2 27
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    RCA 2N591

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    Bristol Electronics 2N591 24
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    2N591 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5911

    Contextual Info: 2N5911 SERIES N-Channel JFET Pairs C T S ificon ix incorporated The 2N5911 Series are JFET matched pairs mounted in a single TO-78 package. Ttiis two-chip design reduces parasitic performance at high-frequency while ensuring extremely tight matching. The 2N5911 features high


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    2N5911 2N5912 MIL-S-19500. PDF

    2n5911

    Abstract: Siliconix N-Channel JFET
    Contextual Info: Tem ic 2N5911/5912 S e m i c o n d u c t o r s Matched N-Channel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS M iö (V) gfc M in (mS) I g Typ (pA) !VGS 1 - V GS2I M ax (mV) 2N5911 -1 to - 5 -25 5 -1 10 2N5912 - i to —5 -25 5 -1 15 Applications


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    2N5911/5912 2N5911 2N5912 P-37407--Rev. 04-Jul-94 Siliconix N-Channel JFET PDF

    Contextual Info: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V


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    2N5911/2N5912 367mW 500mW 2N5911 2N5912 DDDCH33 300nA, PDF

    2N5912

    Abstract: 2N5911 ITC5911 2N5912 jfet 2N5911-12 IT5911 IT5912 ITC5911-12 ITC5912
    Contextual Info: G E SOLID STATE 01 2N5911, 2N 59 12 , ITC5911, ITC5912, ITS911, IT 5 9 1 2 3875081 G E SO LID STATE D e | 3675051 DPI1010 □ | 01E 11010 D T ' J / ~ 2,7 2N5911, 2N5912, ITC5911, ITC5912, IT5911, IT5912 Dual N-Channel JF E T High Frequency Amplifier FEATURES


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    3fl750fll 2N5911, 2N5912, ITC5911, ITC5912, IT5911, IT5912 2N5911-12) ITC5911-12) IT5911-12) 2N5912 2N5911 ITC5911 2N5912 jfet 2N5911-12 IT5911 IT5912 ITC5911-12 ITC5912 PDF

    2N5912

    Abstract: 2N5911 2N5911-12 X2N5912
    Contextual Info: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V


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    2N5911 2N5912 -65oC 200oC -55oC 150oC 10sec) 300oC 367mW 500mW 2N5912 2N5911-12 X2N5912 PDF

    Contextual Info: LS5912C MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912C FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)


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    LS5912C 2N5912C 2N5912C. OT-23 10KHz) PDF

    Contextual Info: 2N5912C MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912C FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)


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    2N5912C 2N5912C 2N5912C. 10KHz) 100MHz) PDF

    Contextual Info: NNZ N-Channel JFET Pair CTSiGcanix Jm B in c o rp o ra te d TYPE PACKAGE Dual SOIC-8 DEVICE • SST440, SST441 Dual TO-71 • U440, U441 Dual TO-78 • 2N5911, 2N5912 Dual Chip • Available as NNZ1CHP TYPICAL CHARACTERISTICS Drain C urre n t & Transcon d u cta n ce


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    SST440, SST441 2N5911, 2N5912 PDF

    Contextual Info: LS5911 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5911 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5911 LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)


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    LS5911 2N5911 2N5911. 10KHz) PDF

    Contextual Info: LS5912C MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912C FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)


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    LS5912C 2N5912C LS5912C. 10KHz) PDF

    Contextual Info: LS5912C MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912C FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)


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    LS5912C 2N5912C LS5912C. 10KHz) PDF

    A561 transistor

    Abstract: transistor a561 2N5911 2N5912 AN102 2N5912 jfet
    Contextual Info: 2N5911/5912 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5911 -1 to -5 -25 5 -1 10 2N5912 -1 to -5 -25 5 -1 15 2N5912, For applications information see AN102, page 6.


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    2N5911/5912 2N5911 2N5912 2N5912, AN102, P-37407--Rev. A561 transistor transistor a561 2N5911 2N5912 AN102 2N5912 jfet PDF

    Contextual Info: LJ na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2N5771 PN5910 U.S.A. JEDEC TO-92 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5910 JEDEC TO-106 PNP SILICON SWITCHING TRANSISTORS MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Base Voltage


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    2N5771 PN5910 2N5910 O-106 100yA 100uA 100nA 100mA PDF

    2N5911

    Abstract: 2N5912 2N5911-12 DS013 X2N5912 2N5912 jfet
    Contextual Info: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V


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    2N5911 2N5912 -65oC 200oC -55oC 150oC 10sec) 300oC 367mW 500mW 2N5912 2N5911-12 DS013 X2N5912 2N5912 jfet PDF

    Contextual Info: 1989963 CENTRAL SEMICONDUCTOR CENTRAL SEMICONDUCTOR c e n tr iti S@iîîi6@fi€§ü6f0r corgs. eenfru! Sifnieonduetor Corp. Central semiconductor Corp. centrai Semiconductor Corp. 92D 00354 D D E l n m ^ dddd 3 S 4 3‘ T 2N5771 PN5910 2N5910 JEDEC T0-92


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    2N5771 PN5910 2N5910 T0-92 T0-106 2N5771, 2N/PN5910 100MHz l40kHz 140kHz PDF

    2N5911

    Abstract: Siliconix JFET Pairs 2N5912 AN102
    Contextual Info: 2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) 2N5911 –1 to –5 –25 5 –1 10 2N5912 –1 to –5 –25 5 –1 15 FEATURES BENEFITS


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    2N5911/5912 2N5911 2N5912 08-Apr-05 2N5911 Siliconix JFET Pairs 2N5912 AN102 PDF

    2N5912

    Abstract: 2N5911 B-23 SMP5911 SMP5912 NJ-30
    Contextual Info: Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation


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    2N5911, 2N5912 2N5911 NJ30L NJ36D SMP5911, SMP5912 2N5912 2N5911 B-23 SMP5911 SMP5912 NJ-30 PDF

    Contextual Info: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz gfs ≥ 4000µS HIGH TRANSCONDUCTANCE (100MHz) ABSOLUTE MAXIMUM RATINGS


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    LS5911 LS5912 LS5912C 2N5911 2N5912 10kHz) 100MHz) OT-23 25-year-old, PDF

    2n5771

    Abstract: 5B550 2N5910 PN5910 Transistor 2N5771
    Contextual Info: Datasheet 2N5771 PN5910 C a | « Go n l 1 «tr 1 U l Sem iconductor Corp. 2N5910 JEDEC T 0 -9 2 JEDEC T 0 -1 0 6 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP SILICON SWITCH NG TRANSISTORS Manufacturers of World Class Discrete Semiconductors


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    2N5771 PN5910 2N5910 T0-92 T0-106 2N5771 2N/PN5910 BVcB10mA, 100MHz 140kHz 5B550 2N5910 PN5910 Transistor 2N5771 PDF

    Contextual Info: 2N5910 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)135þ I(CBO) Max. (A)10nx @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.30 h(FE) Max. Current gain.120


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    2N5910 PDF

    2N5912

    Contextual Info: Dual N-Channe! JFET High Frequency Amplifier caioqic CORPORATION 2N5911 /2N5912 FEATU R ES A B S O L U T E MAXIMUM RATIN G S Ta - 25°C unless otherwise specified • Tight Tracking • Low Insertion L o s s • G o o d M atching Gate-Drain or Gate-Source Voltage . -25V


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    2N5911 /2N5912 367mW 500mW 2N5912 300nA, PDF

    2N5915

    Abstract: 2N5914 VK20009-3B VK200093B ta7409 rca 632 rca power transistor 14-150 pf 424 VK200-093B C3097
    Contextual Info: File No. 424 rotBÆ Solid State RF Pow er Transisto rs Division 2N5914 2N5915 H ig h -P o w er Silicon N -P -N O verlay Transistors 12.E>-Volt, High-Pow er T yp es F o r Class-C A m p lifie rs in


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    N5914 2N5915 2N5915 470MHz 2N5914 2N5914 ss3763r3 VK20009-3B VK200093B ta7409 rca 632 rca power transistor 14-150 pf 424 VK200-093B C3097 PDF

    2N5911

    Abstract: matched pair JFET 2N5912 TO78 package AN102
    Contextual Info: 2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) 2N5911 –1 to –5 –25 5 –1 10 2N5912 –1 to –5 –25 5 –1 15 FEATURES BENEFITS


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    2N5911/5912 2N5911 2N5912 S-04031--Rev. 04-Jun-01 2N5911 matched pair JFET 2N5912 TO78 package AN102 PDF

    Contextual Info: B 23 9 -9 7 2N5911, 2N5912 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • WIDEBAND DIFFERENTIAL AMPLIFIERS Absolute maximum ratings at TA = 25°C Continuous Forward Gate Current 50 mA Total Device Power Dissipation 500 mW Power Derating 4 mW°C


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    2N5911, 2N5912 2N9911 NJ30L 0GG07H3 PDF