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    OMRON Industrial Automation WLNJ30LDN

    Flx Rod MW Coil Spring LED
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    Master Electronics WLNJ30LDN
    • 1 $182.00
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    RS WLNJ30LDN Bulk 1
    • 1 $204.20
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    OMRON Industrial Automation WLNJ30LEN

    Flx Rod MW Coil Spring Neon
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    Master Electronics WLNJ30LEN
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    RS WLNJ30LEN Bulk 1
    • 1 $209.81
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    OMRON Industrial Automation WLNJ30LD

    LSW. COIL SPRING W/LED
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    Master Electronics WLNJ30LD
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    Halo Electronics Inc TG10G-S105NJ30LF

    Telecom Transformer 10 GBase-T Single Port Isolation Transformer 1:1 1500Vrms 500Ohm Prim. 500Ohm Sec. SMD - Rail/Tube (Alt: TG10G-S105NJ30LF)
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    Avnet Americas TG10G-S105NJ30LF Tube 20 Weeks 280
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    Mouser Electronics TG10G-S105NJ30LF
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    Halo Electronics Inc TG10G-S105NJ30LFTR

    10G SMD ISOLATION MODULE - Tape and Reel (Alt: TG10G-S105NJ30LFTR)
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    Avnet Americas TG10G-S105NJ30LFTR Tape & Reel 20 Weeks 300
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    Mouser Electronics TG10G-S105NJ30LFTR
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    NJ30L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5911

    Abstract: 2N5912 IFN5911 IFN5912 SMP5911 SMP5912
    Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-16 F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original
    nj30l2n59112n5912ifn5911+3ifn5912smp5911smp5912 PDF

    Contextual Info: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS


    OCR Scan
    ifn5911ifn5912fn5911ifn9912+2nj30l00g07b7 PDF

    Contextual Info: B 64 9-97 SMP 5911, SMP 5912 m jÄTN ^H ÄN N ETsinCO N TÜ N CTlO N m ELD ^FFK^R^ • WIDEBAND DIFFERENTIAL AMPLIFIERS SMP5011 At 25 °C free air temperature: Min Static Electrical Characteristics Gate Source Breakdown Voltage V b r g s s Gate Reverse Current


    OCR Scan
    smp5011nj30lsmp5912 PDF

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    2n38212n38222n6449mixer u350+8tr3202n48612n4858a2n4117 equivalentj231 2n54612n6450cd860smp5116 PDF

    IFN5912

    Abstract: IFN5911 NJ-30
    Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation


    Original
    ifn5911ifn5912nj-30 PDF

    2N5912

    Abstract: 2N5911 B-23 SMP5911 SMP5912 NJ-30
    Contextual Info: Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation


    Original
    2n59112n5912nj30lnj36d+4smp5911smp5912b-23nj-30 PDF

    2n5485 equivalent transistor

    Abstract: transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416
    Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation


    Original
    2n44162n4416ao-226abo-92/18+82n5485 equivalent transistortransconductance 2n54852n4416 equivalent2n5485interfet2n54842n5486smp4416 PDF

    Contextual Info: B 23 9 -9 7 2N5911, 2N5912 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • WIDEBAND DIFFERENTIAL AMPLIFIERS Absolute maximum ratings at TA = 25°C Continuous Forward Gate Current 50 mA Total Device Power Dissipation 500 mW Power Derating 4 mW°C


    OCR Scan
    2n59112n59122n9911nj30l+10gg07h3 PDF

    SMP5911

    Abstract: SMP5912
    Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-64 B-64 01/99 SMP5911, SMP5912 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Wideband Differential Amplifiers At 25°C free air temperature: SMP5911 SMP5912 Static Electrical Characteristics Min Min Gate Source Breakdown Voltage


    Original
    smp5911smp5912nj30l PDF

    CD860

    Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
    Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation


    Original
    ifn5911ifn5912cd860ifn860+2nj3600lif3602 PDF