UC805 Search Results

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

Contextual Info: LOW PO W E R FIELD EFFE C T T R A N S IS T O R S Type Number Case Style T O - Geometry •BVDgo or BVgss Ciss Max Min (V) (PF) Idss Vgs (off) Min Max (V) (nA) lgss Max (mA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0 10.0 10.0 0.9 0.9

2n2386

Abstract: 2N2497 2N2498 2N2499 2N3380 FP22 to92 2N3330 2N3331 2N3382 2N3384
Contextual Info: *BVDgo or Type Case Geometry BFgss Number Style Min V TO2N2386 FP5.3 *20 5 TO2N2386A FP5.3 *20 5 TO2N2497 FP5.3 20 5 TO2N2498 FP5.3 20 5 TO2N2499 FP5.3 20 5 TO2N2500 FP5.3 20 5 TO2N2606 FP22.2 30 18 TO2N2607 FP22.2 30 18 TO2N2608 FP22.2 30 18 TO2N2609 FP22.2

2N2386

Contextual Info: raOEHyXgTr ÄTTÄIL LO W P O W E R FIELD EFFECT T R A N S IS T O R S m Typ« HvBttbsi \ U/AL [P O « ® ® ! •BVDgo or Ciss BVgss Style Min Max (T O - Geometry (pF) Cam (V) lgss Max (nA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0

2N3993A

Abstract: FP22 to92 2N5265
Contextual Info: m it r o n Devices. Inc r a E i y j< S T P Ì KI I Type Number â ît â il ® LOW P O W E R FIELD E F F E C T T R A N S IS T O R S •BVDgo or BVgss Ciss Case Max Min Style (TO—) Geometry (V) (pF) U » ® Vgs (off) Min Max (V) (nA) © ! ! (?•=■© K I / Ä K 1K l ( I I I

2n2386

Abstract: 2N2497 2N2498 2N2499 2N2844 UC-40 2N2606 2N3331 2N3380 2N3575
Contextual Info: [^ © UKST (SÄT/m L O W P O W E R FIELD E F F E C T T R A N S I S T O R S Type Number Case Style ( T O - Geometry •BVDgo or BVgss Ciss Max Min (V) (pF) _ 20.0 — — — — — — — — — 13.0 33.0 1.0 2.2 1.0 60 180 540 1800 100 — — —