FET BFW10
Abstract: BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j
Contextual Info: JUNCTION FET Item Number Part Number 91. IDSS Manufacturer VOS Off CI. Max Max PD Max Toper Max Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 TP4224 2N4224 SMP5248 TMPF5248 TP5248 TP5248 BFW10 MMF1 MMF2 MMF3 4 MMF5 MMF6 SMP3823 TIS34 TMPF3823 TP3823
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tp42242n4224smp5248tmpf5248+15tp5248bfw10smp3823tis34tmpf3823fet bfw10bc244fet nf510nf510 fet2sk520bfw10 fetfet bf244fet tis34nf510nec 200j
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc10n12tfk 404t1s58+8bci83lgermanium diode oa 182tfk diodetransistors 2n 945v744akai amplifiertis62bci09
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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TIS34
Abstract: transistor TIS34 2N5Z48 ves 2 260
Contextual Info: TYPE 2N5Z48 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6811052, S E P T E M B E R 1968 SILE C T t FIELD-EFFECT T RA N SIST O R * FOR VHF A M P LIF IE R A N D M IX E R APPLICATIONS • • • Low Crss: < 2 pF High yfs/Ciss Ratio High-Frequency Figure-of-Merit
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2n5z48tis34transistor tis34ves 2 260 |
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TIS34
Abstract: tis58 TIS25 TIS59 2n2386 2N3328 TIS42 2N2499 2N3820 silec
Contextual Info: Field Effect Transistors No. £^ o 1 ! C S o w U “ S ilic o n P -C h a n n e l F ie ld Effect S ilic o n N -C h a n n el F ield Effect S ilic o n N -C h a n n el D ual M atched Field Effect Germ anium P Channel Field Effect V DG V !e mA p p p p p p 20 20
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2n23862n2497n2498n2499+142n2s002n33282n33302n3331n33322n3573tis34tis58tis25tis59tis422n24992n3820silec
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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kt 819 transistor2n2222a 338sf129dsf137d+6ssy20bkt819wsf127ekfy18 321kp303wkfy18
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TIS34
Abstract: MPF108 MN2500 MPF106 nf500 MPF-102 ke4416 2n4339 national 2N5485 mpf102
Contextual Info: N-Channel FETs RF amps BVGSS "BVOGO IVI M,n ease Type No. Styl. lOSS ImAI IGSS InAl Max Min Max Yfl I"mhol M,n @ , IMHzl Vploffl IVI Max C,a IpFI Max Gp lelll Min Cra IpFI Max @ , IMHz! NF IdBI @ Max IM~z!@ R""n Iknl Proc. No. 2N3821 TO•72 50 01 05 25 1500
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2n34582n34692n34602n3684+152n36852n36862n36872n43382n43392n4340tis34mpf108mn2500mpf106nf500mpf-102ke44162n4339 national2n5485 mpf102
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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TIS69 equivalent
Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Contextual Info: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the
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2n50452n50462n5047tis69 equivalent+62n3575germanium itttis59tis582n2386tis26
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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2N3303
Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any
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chiana562n3303t1s57rjh 3347+72n3680la 4301transistor itt 29072n37922n3574bf173transistor bf 175
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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fjj141/a2305dfjj181/a2305e/848+16fjj191/afjl101/acd2306dfjy101/a2306e/832cd2307/9443te4452n3303ecc88taa*310b9d transistorbyy32gex36/7ferranti zs706ej73n159
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E421 fet
Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.
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o-72po-92xo-105o-106+11o-106pe421 fetequivalent transistor e176j2n2608j2n3821e112 jfete420 dual jfet2n390g transistore421 dual jfet2n4360 equivalent transistorsteledyne semiconductor jfet
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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e420 dual jfetac digital voltmeter using 7107mps5010bf320+6jfet bf245 bf246 j201 2n3819mc6821icl7117 voltmetercookbook for ic 555hall marking code a04e304 fet
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1n6227silecgg 841n623+62g300chn 543ic hxj 20381n52398in52401n48 zener diode
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