TMPF3331 Search Results

Contextual Info: S P R A G U E / S E M I C O N DG R O U P 8514019 SPRAGUE. ^3 D • f l S 13f l S 0 0003^12 0 S E M IC O N D S/ IC S 93D 03612 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELEC TR IC AL CHARACTERISTICS at TA = 25°C Vgs oh V(BH)GSS Device

2SJ72BL

Abstract: PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer gt. V BA GSS loss (V) (A) Min (S) Max 6.0m 6.0m 6.0m 6.0m 8.0m 9.0m 9.0m 15m 15m 15m Him 15m 15m 15m 15m 15m 15m 15m 15m 30m 1.0m 1.0m 1.5m 1.5", 800u 1.0m 1.0m 2.2m 2.2m 3.0m 3.0m 1.3m 0.8m 800u 800u 1.0m

PF3820

Contextual Info: AL LE GRO MICROSYSTEMS 8 5 1 4 0 1 9 S P RA GU E. INC <Ì3 D • 0S0433Ô S E M I C O N D S / ICS 0003bl5 T ■ AL6R 3 93 D 03 6 1 2 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TÄ = 25°C V gsío hj ^ BHIGSS

TMPF3820

Abstract: TMPF5116 PJ99 TMPFJ271 TMPF5020 TMPF2608 TMPF2609 TMPF3329 TMPF3330 TMPF3331
Contextual Info: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE. ^3 D • flS13flS0 0003^12 0 S E M IC ON D S/ ICS 93D 03612 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oh V(BR)GSS Device Type Min. ftlG (V) (l*A) TMPF2608